Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi)(2)Te-3
2015-11
Source PublicationNATURE COMMUNICATIONS
ISSN2041-1723
Volume6
Status已发表
DOI10.1038/ncomms9913
AbstractMagnetically doped topological insulators, possessing an energy gap created at the Dirac point through time-reversal-symmetry breaking, are predicted to exhibit exotic phenomena including the quantized anomalous Hall effect and a dissipationless transport, which facilitate the development of low-power-consumption devices using electron spins. Although several candidates of magnetically doped topological insulators were demonstrated to show long-range magnetic order, the realization of the quantized anomalous Hall effect is so far restricted to the Cr-doped (Sb,Bi)(2)Te-3 system at extremely low temperature; however, the microscopic origin of its ferromagnetism is poorly understood. Here we present an element-resolved study for Cr-doped (Sb,Bi)(2)Te-3 using X-ray magnetic circular dichroism to unambiguously show that the long-range magnetic order is mediated by the p-hole carriers of the host lattice, and the interaction between the Sb(Te) p and Cr d states is crucial. Our results are important for material engineering in realizing the quantized anomalous Hall effect at higher temperatures.
Indexed BySCI
Language英语
Funding ProjectJSPS KAKENHI[26247064]
WOS Research AreaScience & Technology - Other Topics
WOS SubjectMultidisciplinary Sciences
WOS IDWOS:000366378900015
PublisherNATURE PUBLISHING GROUP
WOS KeywordABSORPTION-SPECTRA ; DIRAC-FERMION ; TRANSITION ; DICHROISM ; STATE
Original Document TypeArticle
Citation statistics
Document Type期刊论文
Identifierhttps://kms.shanghaitech.edu.cn/handle/2MSLDSTB/2094
Collection物质科学与技术学院
物质科学与技术学院_特聘教授组_乔山组
物质科学与技术学院_特聘教授组_谢晓明组
物质科学与技术学院_科学装置(X)_同步辐射项目
Corresponding AuthorYe, Mao
Affiliation
1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
2.Chinese Acad Sci, Shanghai Sci Res Ctr, Shanghai 201203, Peoples R China
3.Hiroshima Univ, Grad Sch Sci, Higashihiroshima 7398526, Japan
4.Japan Atom Energy Agcy, Quantum Beam Sci Ctr, Condensed Matter Sci Div, Sayo, Hyogo 6795148, Japan
5.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
6.Fudan Univ, Dept Phys, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
7.Fudan Univ, Adv Mat Lab, Shanghai 200433, Peoples R China
Recommended Citation
GB/T 7714
Ye, Mao,Li, Wei,Zhu, Siyuan,et al. Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi)(2)Te-3[J]. NATURE COMMUNICATIONS,2015,6.
APA Ye, Mao.,Li, Wei.,Zhu, Siyuan.,Takeda, Yukiharu.,Saitoh, Yuji.,...&Xie, Xiaoming.(2015).Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi)(2)Te-3.NATURE COMMUNICATIONS,6.
MLA Ye, Mao,et al."Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi)(2)Te-3".NATURE COMMUNICATIONS 6(2015).
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