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Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi)(2)Te-3 | |
2015-11 | |
Source Publication | NATURE COMMUNICATIONS
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ISSN | 2041-1723 |
Volume | 6 |
Status | 已发表 |
DOI | 10.1038/ncomms9913 |
Abstract | Magnetically doped topological insulators, possessing an energy gap created at the Dirac point through time-reversal-symmetry breaking, are predicted to exhibit exotic phenomena including the quantized anomalous Hall effect and a dissipationless transport, which facilitate the development of low-power-consumption devices using electron spins. Although several candidates of magnetically doped topological insulators were demonstrated to show long-range magnetic order, the realization of the quantized anomalous Hall effect is so far restricted to the Cr-doped (Sb,Bi)(2)Te-3 system at extremely low temperature; however, the microscopic origin of its ferromagnetism is poorly understood. Here we present an element-resolved study for Cr-doped (Sb,Bi)(2)Te-3 using X-ray magnetic circular dichroism to unambiguously show that the long-range magnetic order is mediated by the p-hole carriers of the host lattice, and the interaction between the Sb(Te) p and Cr d states is crucial. Our results are important for material engineering in realizing the quantized anomalous Hall effect at higher temperatures. |
Indexed By | SCI |
Language | 英语 |
Funding Project | JSPS KAKENHI[26247064] |
WOS Research Area | Science & Technology - Other Topics |
WOS Subject | Multidisciplinary Sciences |
WOS ID | WOS:000366378900015 |
Publisher | NATURE PUBLISHING GROUP |
WOS Keyword | ABSORPTION-SPECTRA ; DIRAC-FERMION ; TRANSITION ; DICHROISM ; STATE |
Original Document Type | Article |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/2094 |
Collection | 物质科学与技术学院 物质科学与技术学院_特聘教授组_乔山组 物质科学与技术学院_特聘教授组_谢晓明组 物质科学与技术学院_科学装置(X)_同步辐射项目 |
Corresponding Author | Ye, Mao |
Affiliation | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Chinese Acad Sci, Shanghai Sci Res Ctr, Shanghai 201203, Peoples R China 3.Hiroshima Univ, Grad Sch Sci, Higashihiroshima 7398526, Japan 4.Japan Atom Energy Agcy, Quantum Beam Sci Ctr, Condensed Matter Sci Div, Sayo, Hyogo 6795148, Japan 5.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China 6.Fudan Univ, Dept Phys, State Key Lab Surface Phys, Shanghai 200433, Peoples R China 7.Fudan Univ, Adv Mat Lab, Shanghai 200433, Peoples R China |
Recommended Citation GB/T 7714 | Ye, Mao,Li, Wei,Zhu, Siyuan,et al. Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi)(2)Te-3[J]. NATURE COMMUNICATIONS,2015,6. |
APA | Ye, Mao.,Li, Wei.,Zhu, Siyuan.,Takeda, Yukiharu.,Saitoh, Yuji.,...&Xie, Xiaoming.(2015).Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi)(2)Te-3.NATURE COMMUNICATIONS,6. |
MLA | Ye, Mao,et al."Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi)(2)Te-3".NATURE COMMUNICATIONS 6(2015). |
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