Lateral Heterostructures Formed by Thermally Converting n-Type SnSe2 to p-Type SnSe
Tian, Zhen1,2,4; Zhao, Mingxing2,4; Xue, Xiongxiong3; Xia, Wei2; Guo, Chenglei1,2,4; Guo, Yanfeng2; Feng, Yexin3; Xue, Jiamin2,4,5
2018-04-18
Source PublicationACS APPLIED MATERIALS & INTERFACES
ISSN1944-8244
Volume10Issue:15Pages:12831-12838
Status已发表
DOI10.1021/acsami.8b01235
Abstract

Different two-dimensional (2D) materials, when combined together to form heterostructures, can exhibit exciting properties that do not exist in individual components. Therefore, intensive research efforts have been devoted to their fabrication and characterization. Previously, vertical and in-plane 2D heterostructures have been formed by mechanical stacking and chemical vapor deposition. Here, we report a new material system that can form in-plane p-n junctions by thermal conversion of n-type SnSe2 to p-type SnSe. Through scanning tunneling microscopy and density functional theory studies, we find that these two distinctively different lattices can form atomically sharp interfaces and have a type II to nearly type III band alignment. We also demonstrate that this method can be used to create micron-sized in-plane p-n junctions at predefined locations. These findings pave the way for further exploration of the intriguing properties of the SnSe2 SnSe heterostructure.

KeywordSTM SnSe2 SnSe in-plane p-n junction atomically sharp interfaces 2D materials
Indexed BySCI ; EI
Funding ProjectShanghai Pujiang Program[17PJ1406200]
WOS Research AreaScience & Technology - Other Topics ; Materials Science
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000430642100076
PublisherAMER CHEMICAL SOC
EI Accession Number20181705044022
EI KeywordsChemical vapor deposition ; Density functional theory ; Heterojunctions ; Interfaces (materials) ; Lattice theory ; Layered semiconductors ; Scanning tunneling microscopy ; Selenium compounds
EI Classification NumberSemiconductor Devices and Integrated Circuits:714.2 ; Chemical Reactions:802.2 ; Probability Theory:922.1 ; Mathematical Statistics:922.2 ; Materials Science:951
WOS KeywordEPITAXIAL-GROWTH ; TRANSITION ; HETEROJUNCTIONS ; CONDUCTIVITY ; TRANSPORT ; CRYSTALS
Original Document TypeArticle
Citation statistics
Cited Times:27[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttps://kms.shanghaitech.edu.cn/handle/2MSLDSTB/20908
Collection物质科学与技术学院
物质科学与技术学院_PI研究组_薛加民组
物质科学与技术学院_PI研究组_郭艳峰组
物质科学与技术学院_博士生
Co-First AuthorZhao, Mingxing; Xue, Xiongxiong
Corresponding AuthorFeng, Yexin; Xue, Jiamin
Affiliation1.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
3.Hunan Univ, Sch Phys & Elect, Changsha 410082, Hunan, Peoples R China
4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
5.Chinese Acad Sci, Ctr Excellence Superconducting Elect CENSE, Shanghai 200050, Peoples R China
First Author AffilicationSchool of Physical Science and Technology
Corresponding Author AffilicationSchool of Physical Science and Technology
Recommended Citation
GB/T 7714
Tian, Zhen,Zhao, Mingxing,Xue, Xiongxiong,et al. Lateral Heterostructures Formed by Thermally Converting n-Type SnSe2 to p-Type SnSe[J]. ACS APPLIED MATERIALS & INTERFACES,2018,10(15):12831-12838.
APA Tian, Zhen.,Zhao, Mingxing.,Xue, Xiongxiong.,Xia, Wei.,Guo, Chenglei.,...&Xue, Jiamin.(2018).Lateral Heterostructures Formed by Thermally Converting n-Type SnSe2 to p-Type SnSe.ACS APPLIED MATERIALS & INTERFACES,10(15),12831-12838.
MLA Tian, Zhen,et al."Lateral Heterostructures Formed by Thermally Converting n-Type SnSe2 to p-Type SnSe".ACS APPLIED MATERIALS & INTERFACES 10.15(2018):12831-12838.
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