Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate

doi:10.1109/JLT.2018.2811388

	Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate
	Wei Chen1,2 ; Zhuo Deng1 ; Daqian Guo 3; Yaojiang Chen1 ; Yuriy I. Mazur 4; Yurii Maidaniuk 4; Mourad Benamara 4; Gregory J. Salamo 4; Huiyun Liu 3; Jiang Wu 3; Baile Chen1
	2018
发表期刊	JOURNAL OF LIGHTWAVE TECHNOLOGY
ISSN	1558-2213
卷号	36 期号:13
DOI	10.1109/JLT.2018.2811388
摘要	In this paper, we have demonstrated the first InAs/InGaAs/GaAs quantum dots-in-a-well (DWELL) photodetector monolithically grown on silicon substrate. We studied both the optical and electrical characteristics of the DWELL photodetectors. Time-resolved photoluminescence spectra measured from the DWELL photodetector revealed a long carrier lifetime of 1.52 ns. A low dark current density of 2.03 × 10-3 mA/cm2 was achieved under 1 V bias at 77 K. The device showed a peak responsivity of 10.9 mA/W under 2 V bias at the wavelength of 6.4 μm at 77 K, and the corresponding detectivity was 5.78 × 108 cm·Hz1/2/W. These results demonstrated that these silicon-based DWELL photodetectors are very promising for future mid-infrared applications, which can enjoy the potential benefit from mid-infrared silicon photonics technology.
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收录类别	SCI ; SCIE ; EI
来源库	IEEE
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/20862
专题	信息科学与技术学院信息科学与技术学院_PI研究组_陈佰乐组信息科学与技术学院_硕士生信息科学与技术学院_博士生
作者单位	1.Optoelectronic Device Laboratory, School of Information Science and Technology, ShanghaiTech University, Shanghai, China 2.University of Chinese Academy of Sciences, Huairou, China 3.Department of Electronic and Electrical Engineering, University College London, London, U.K. 4.Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA
第一作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Wei Chen,Zhuo Deng,Daqian Guo,et al. Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY,2018,36(13).
APA	Wei Chen.,Zhuo Deng.,Daqian Guo.,Yaojiang Chen.,Yuriy I. Mazur.,...&Baile Chen.(2018).Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate.JOURNAL OF LIGHTWAVE TECHNOLOGY,36(13).
MLA	Wei Chen,et al."Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate".JOURNAL OF LIGHTWAVE TECHNOLOGY 36.13(2018).