Band Structure and Optical Gain of InGaAs/GaAsBi Type-II Quantum Wells Modeled by the k center dot p Model

doi:10.1088/0256-307X/35/5/057801

	Band Structure and Optical Gain of InGaAs/GaAsBi Type-II Quantum Wells Modeled by the k center dot p Model
	Wang, Chang1,2,3 ; Pan, Wenwu 2,3; Kolokolov, Konstantin 4; Wang, Shumin1,2,5
	2018-05
发表期刊	CHINESE PHYSICS LETTERS (IF:3.5[JCR-2023],2.1[5-Year])
ISSN	0256-307X
卷号	35 期号:5
发表状态	已发表
DOI	10.1088/0256-307X/35/5/057801
摘要	Optical gains of type-II InGaAs/GaAsBi quantum wells (QWs) with W, N, and M shapes are analyzed theoretically for near-infrared laser applications. The bandgap and wave functions are calculated using the self-consistent k . p Hamiltonian, taking into account valence band mixing and the strain effect. Our calculations show that the M-shaped type-II QWs are a promising structure for making 1.3 mu m lasers at room temperature because they can easily be used to obtain 1.3 mu m for photoluminescence with a proper thickness and have large wave-function overlap for high optical gain.
收录类别	SCI ; SCIE ; EI
语种	英语
资助项目	Creative Research Group Project of Natural Science Foundation of China[61321492]
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
WOS记录号	WOS:000432916300030
出版者	IOP PUBLISHING LTD
WOS关键词	MOLECULAR-BEAM EPITAXY ; GAAS1-XBIX ; EMISSION ; GROWTH ; LASERS ; GAAS ; GAP
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/20848
专题	物质科学与技术学院信息科学与技术学院_特聘教授组_王庶民组物质科学与技术学院_硕士生
通讯作者	Wang, Shumin
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100190, Peoples R China 4.Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119991, Russia 5.Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Wang, Chang,Pan, Wenwu,Kolokolov, Konstantin,et al. Band Structure and Optical Gain of InGaAs/GaAsBi Type-II Quantum Wells Modeled by the k center dot p Model[J]. CHINESE PHYSICS LETTERS,2018,35(5).
APA	Wang, Chang,Pan, Wenwu,Kolokolov, Konstantin,&Wang, Shumin.(2018).Band Structure and Optical Gain of InGaAs/GaAsBi Type-II Quantum Wells Modeled by the k center dot p Model.CHINESE PHYSICS LETTERS,35(5).
MLA	Wang, Chang,et al."Band Structure and Optical Gain of InGaAs/GaAsBi Type-II Quantum Wells Modeled by the k center dot p Model".CHINESE PHYSICS LETTERS 35.5(2018).