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| RF Characteristics of Two Generations of RFeSI HR-SOI Substrates Over Temperature | |
| 2018-05 | |
| 发表期刊 | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
 |
| ISSN | 1531-1309 |
| 卷号 | 28期号:5页码:377-379 |
| 发表状态 | 已发表 |
| DOI | 10.1109/LMWC.2018.2813884 |
| 摘要 | RF losses and nonlinearities of the commercially available Soitec radio frequency enhanced signal integrity (RFeSI) high-resistivity silicon-on-insulator substrates are investigated through investigation of 50-Omega coplanar waveguide lines manufactured on them. It is shown that the losses of the RFeSI substrates are very small. They have a temperature minimum value at around 70 degrees C. The generated second-and third-harmonic powers, due to the nonlinearities of the substrates, also have a similar temperature minimum value. The results indicate that the RFeSI substrates present a good RF performance over a temperature range from 0 degrees C to 115 degrees C. The RF performance of the two generations of RFeSI substrates is also compared. The losses of the two RFeSI substrates remain the same over the explored temperature range, whereas the harmonic performance of generation 2 (RFeSI 90) is better than that of generation 1 (RFeSI 80). This stems from the increased effective resistivity. |
| 关键词 | Coplanar waveguide (CPW) line effective resistivity harmonic high-resistivity silicon on insulator (HR-SOI) loss nonlinearity parasitic surface conduction (PSC) radio frequency enhanced signal integrity (RFeSI) |
| URL | 查看原文 |
| 收录类别 | SCI ; SCIE ; EI |
| 语种 | 英语 |
| WOS研究方向 | Engineering |
| WOS类目 | Engineering, Electrical & Electronic |
| WOS记录号 | WOS:000432008700005 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| WOS关键词 | RESISTIVITY ; SI |
| 原始文献类型 | Article |
| 来源库 | IEEE |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/20845 |
| 专题 | 物质科学与技术学院 物质科学与技术学院_博士生 |
| 作者单位 | 1.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China 2.University of Michigan–Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai, China 3.Soitec Company, Bernin, France 4.Department of Research and Development, Shanghai Industrial μTechnology Research Institute, Shanghai, China 5.Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China 6.School of Physical Science and Technology, China School of Physical Science and Technology, and School of Physical Science and Technology, ShanghaiTech University, Shanghai, China |
| 第一作者单位 | 物质科学与技术学院 |
| 推荐引用方式 GB/T 7714 | Lei Zhu,Shuangke Liu,Frederic Allibert,et al. RF Characteristics of Two Generations of RFeSI HR-SOI Substrates Over Temperature[J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS,2018,28(5):377-379. |
| APA | Lei Zhu.,Shuangke Liu.,Frederic Allibert.,Ionut Radu.,Xinen Zhu.,...&Xi Wang.(2018).RF Characteristics of Two Generations of RFeSI HR-SOI Substrates Over Temperature.IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS,28(5),377-379. |
| MLA | Lei Zhu,et al."RF Characteristics of Two Generations of RFeSI HR-SOI Substrates Over Temperature".IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS 28.5(2018):377-379. |
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