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Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces | |
2022-08 | |
发表期刊 | SCIENCE CHINA INFORMATION SCIENCES (IF:7.3[JCR-2023],5.8[5-Year]) |
ISSN | 1674-733X |
EISSN | 1869-1919 |
卷号 | 65期号:8 |
发表状态 | 已发表 |
DOI | 10.1007/s11432-021-3398-y |
摘要 | Heterogeneous integration of InP and GaSb on Si substrates holds a huge potential interest in near-infrared and mid-infrared optoelectronic devices. In this study, 2-inch 180-nm-thick InP and 185-nm-thick GaSb thin layers were successfully transferred onto the Si substrates to form high-quality and ultra-smooth InP/Si and GaSb/Si templates using molecular beam epitaxy (MBE) and the ion-slicing technique together with selective chemical etching. The relocation of the implantation-introduced damage in the sacrificial layer enables the transfer of relatively defect-free InP and GaSb thin films. The sacrificial layers were completely etched off by selective chemical etching, leaving ultra-smooth epitaxial surfaces with a roughness of 0.2 nm for the InP/Si template and 0.9 nm for the GaSb/Si template, respectively. Thus, the chemical mechanical polishing (CMP) process was not required to smooth the surface which usually introduces particles and chemical contaminations on the transferred templates. Furthermore, the donor substrate is not consumed and can be recycled to reduce the cost, which provides a paradigm for the sustainable and economic development of the Si integration platform. © 2022, Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature. |
关键词 | Chemical mechanical polishing Etching Gallium compounds III-V semiconductors Infrared devices Integration Molecular beam epitaxy Optoelectronic devices Semiconducting indium phosphide Silicon Substrates Chemical etching Gasb/si Heterogeneous integration InP/si Ion slicing Ion-slicing technique Molecular-beam epitaxy Sacrificial layer Selective chemical etching Si substrates |
收录类别 | EI ; SCIE |
语种 | 英语 |
出版者 | Science Press (China) |
EI入藏号 | 20222812343049 |
EI主题词 | Indium phosphide |
EI分类号 | 549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals ; 712.1 Semiconducting Materials ; 712.1.2 Compound Semiconducting Materials ; 741.3 Optical Devices and Systems ; 802.2 Chemical Reactions ; 804.2 Inorganic Compounds ; 921.2 Calculus ; 931.3 Atomic and Molecular Physics ; 933.1.2 Crystal Growth |
原始文献类型 | Journal article (JA) |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/206311 |
专题 | 信息科学与技术学院_博士生 |
通讯作者 | Lin, Jiajie; Wang, Shumin; Ou, Xin |
作者单位 | 1.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai; 200050, China; 2.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China; 3.College of Information Science and Engineering, Jiaxing University, Jiaxing; 314001, China; 4.School of Information Science and Technology, ShanghaiTech University, Shanghai; 201210, China; 5.Department of Semiconductor Materials Engineering, Wroclaw University of Science and Technology, Wroclaw; 50-370, Poland; 6.Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg; 41296, Sweden |
推荐引用方式 GB/T 7714 | Jin, Tingting,Lin, Jiajie,You, Tiangui,et al. Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces[J]. SCIENCE CHINA INFORMATION SCIENCES,2022,65(8). |
APA | Jin, Tingting.,Lin, Jiajie.,You, Tiangui.,Zhang, Xiaolei.,Liang, Hao.,...&Ou, Xin.(2022).Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces.SCIENCE CHINA INFORMATION SCIENCES,65(8). |
MLA | Jin, Tingting,et al."Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces".SCIENCE CHINA INFORMATION SCIENCES 65.8(2022). |
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