Room-temperature ductile inorganic semiconductor

doi:10.1038/s41563-018-0047-z

	Room-temperature ductile inorganic semiconductor
	Shi, Xun 1; Chen, Hongyi1,2 ; Hao, Feng 1,3; Liu, Ruiheng 1; Wang, Tuo 1,3; Qiu, Pengfei 1; Burkhardt, Ulrich 4; Grin, Yuri 4; Chen, Lidong1
	2018-05
发表期刊	NATURE MATERIALS (IF:37.2[JCR-2023],44.0[5-Year])
ISSN	1476-1122
卷号	17 期号:5 页码:421-+
发表状态	已发表
DOI	10.1038/s41563-018-0047-z
摘要	Ductility is common in metals and metal-based alloys, but is rarely observed in inorganic semiconductors and ceramic insulators. In particular, room-temperature ductile inorganic semiconductors were not known until now. Here, we report an inorganic alpha-Ag2S semiconductor that exhibits extraordinary metal-like ductility with high plastic deformation strains at room temperature. Analysis of the chemical bonding reveals systems of planes with relatively weak atomic interactions in the crystal structure. In combination with irregularly distributed silver-silver and sulfur-silver bonds due to the silver diffusion, they suppress the cleavage of the material, and thus result in unprecedented ductility. This work opens up the possibility of searching for ductile inorganic semiconductors/ceramics for flexible electronic devices.
收录类别	SCI ; SCIE ; EI
语种	英语
资助项目	Shanghai Government[15JC1400301] ; Shanghai Government[16XD1403900]
WOS研究方向	Chemistry ; Materials Science ; Physics
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000430942800018
出版者	NATURE PUBLISHING GROUP
EI入藏号	20181505002018
EI主题词	Chemical analysis ; Chemical bonds ; Crystal atomic structure ; Ductility ; Silver compounds
WOS关键词	ELECTRON LOCALIZABILITY ; HIGH-STRENGTH ; DEFORMATION ; BEHAVIOR ; METALS ; DISLOCATION ; CRYSTALS ; TITANIUM ; TI3SIC2 ; COPPER
原始文献类型	Article
引用统计	被引频次：345[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/20206
专题	物质科学与技术学院物质科学与技术学院_特聘教授组_陈立东组物质科学与技术学院_博士生
通讯作者	Shi, Xun; Grin, Yuri; Chen, Lidong
作者单位	1.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai, Peoples R China 2.Shanghai Tech Univ, Shanghai, Peoples R China 3.Univ Chinese Acad Sci, Beijing, Peoples R China 4.Max Planck Inst Chem Phys Fester Stoffe, Dresden, Germany
推荐引用方式 GB/T 7714	Shi, Xun,Chen, Hongyi,Hao, Feng,et al. Room-temperature ductile inorganic semiconductor[J]. NATURE MATERIALS,2018,17(5):421-+.
APA	Shi, Xun.,Chen, Hongyi.,Hao, Feng.,Liu, Ruiheng.,Wang, Tuo.,...&Chen, Lidong.(2018).Room-temperature ductile inorganic semiconductor.NATURE MATERIALS,17(5),421-+.
MLA	Shi, Xun,et al."Room-temperature ductile inorganic semiconductor".NATURE MATERIALS 17.5(2018):421-+.