Temperature dependence of spectral linewidth of InAs/InP quantum dot distributed feedback lasers

doi:10.1117/12.2290905

	Temperature dependence of spectral linewidth of InAs/InP quantum dot distributed feedback lasers
	Duan, J.1; Huang, H.1; Schires, K.1; Poole, P. J.2; Wang, C.3 ; Grillot, F.1,4
	2018
会议录名称	NOVEL IN-PLANE SEMICONDUCTOR LASERS XVII
卷号	10553
发表状态	已发表
DOI	10.1117/12.2290905
摘要	In this paper, we investigate the temperature dependence of spectral linewidth of InAs/InP quantum dot distributed feedback lasers. In comparison with their quantum well counterparts, results show that quantum dot lasers have spectral linewidths rather insensitive to the temperature with minimum values below 200 kHz in the range of 283K to 303K. The experimental results are also well confirmed by numerical simulations. Overall, this work shows that quantum dot lasers are excellent candidates for various applications such as coherent communication systems, high-resolution spectroscopy, high purity photonic microwave generation and on-chip atomic clocks.
关键词	quantum dots distributed feedback laser coherent communications spectral linewidth
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
会议地点	San Francisco, CA, United states
收录类别	CPCI ; CPCI-S ; EI
语种	英语
资助项目	European Office of Aerospace Research and Development (EOARD)[FA9550-15-1-0104]
WOS研究方向	Engineering ; Optics ; Physics
WOS类目	Engineering, Electrical & Electronic ; Optics ; Physics, Applied
WOS记录号	WOS:000432540200008
出版者	SPIE-INT SOC OPTICAL ENGINEERING
EI入藏号	20181505007100
EI主题词	III-V semiconductors ; Indium arsenide ; Linewidth ; Nanocrystals ; Narrow band gap semiconductors ; Quantum dot lasers ; Quantum well lasers ; Semiconductor quantum dots ; Semiconductor quantum wells ; Spectroscopic analysis ; Temperature distribution
EI分类号	Thermodynamics:641.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Lasers, General:744.1 ; Semiconductor Lasers:744.4.1 ; Nanotechnology:761 ; Chemistry:801 ; Inorganic Compounds:804.2 ; Atomic and Molecular Physics:931.3
WOS关键词	SEMICONDUCTOR-LASERS
原始文献类型	Proceedings Paper
引用统计	正在获取...
文献类型	会议论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/20178
专题	信息科学与技术学院_PI研究组_王成组
通讯作者	Duan, J.
作者单位	1.Univ Paris Saclay, Telecom ParisTech, LTCI, Paris, France 2.NRC Canada, Adv Elect & Photon Res Ctr, Ottawa, ON, Canada 3.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai, Peoples R China 4.Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87131 USA
推荐引用方式 GB/T 7714	Duan, J.,Huang, H.,Schires, K.,et al. Temperature dependence of spectral linewidth of InAs/InP quantum dot distributed feedback lasers[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2018.