On-Chip Integrated Yb3+-Doped Waveguide Amplifiers on Thin Film Lithium Niobate
2022-06
发表期刊MICROMACHINES
ISSN2072-666X
EISSN2072-666X
卷号13期号:6
发表状态已发表
DOI10.3390/mi13060865
摘要

We report the fabrication and optical characterization of Yb3+-doped waveguide amplifiers (YDWA) on the thin film lithium niobate fabricated by photolithography assisted chemo-mechanical etching. The fabricated Yb3+-doped lithium niobate waveguides demonstrates low propagation loss of 0.13 dB/cm at 1030 nm and 0.1 dB/cm at 1060 nm. The internal net gain of 5 dB at 1030 nm and 8 dB at 1060 nm are measured on a 4.0 cm long waveguide pumped by 976 nm laser diodes, indicating the gain per unit length of 1.25 dB/cm at 1030 nm and 2 dB/cm at 1060 nm, respectively. The integrated Yb3+-doped lithium niobate waveguide amplifiers will benefit the development of a powerful gain platform and are expected to contribute to the high-density integration of thin film lithium niobate based photonic chip. © 2022 by the authors. Licensee MDPI, Basel, Switzerland.

关键词Etching Lithium Niobium compounds Pumping (laser) Waveguides 1060 nm Internal net gain Lithium niobate Lithium Niobate Waveguide Low propagation loss Net gain On chips Thin-films Waveguide amplifiers Yb3+-doped waveguide amplifier
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收录类别SCI ; SCIE ; EI
语种英语
资助项目National Key R&D Program of China[2019YFA0705000] ; National Natural Science Foundation of China[12004116,11874154,11734009,11933005,11874060,61991444] ; Shanghai Municipal Science and Technology Major Project[2019SHZDZX01] ; Shanghai Sailing Program[21YF1410400]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Instruments & Instrumentation ; Physics
WOS类目Chemistry, Analytical ; Nanoscience & Nanotechnology ; Instruments & Instrumentation ; Physics, Applied
WOS记录号WOS:000819621900001
出版者MDPI
EI入藏号20222512260563
EI主题词Thin films
EI分类号542.4 Lithium and Alloys ; 549.1 Alkali Metals ; 714.3 Waveguides ; 744.1 Lasers, General ; 802.2 Chemical Reactions
原始文献类型Journal article (JA)
引用统计
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/200694
专题物质科学与技术学院_博士生
通讯作者Fang, Zhiwei; Cheng, Ya
作者单位
1.Chinese Acad Sci, State Key Lab High Field Laser Phys, Shanghai 201800, Peoples R China
2.Chinese Acad Sci, CAS Ctr Excellence Ultraintense Laser Sci, Shanghai Inst Opt & Fine Mech SIOM, Shanghai 201800, Peoples R China
3.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
4.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
5.East China Normal Univ, Sch Phys & Elect Sci, Extreme Optoelectromech Lab XXL, Shanghai 200241, Peoples R China
6.East China Normal Univ, State Key Lab Precis Spect, Shanghai 200062, Peoples R China
7.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China
8.Shandong Normal Univ, Collaborat Innovat Ctr Light Manipulat & Applicat, Jinan 250358, Peoples R China
9.Shanghai Res Ctr Quantum Sci, Shanghai 201315, Peoples R China
第一作者单位物质科学与技术学院
推荐引用方式
GB/T 7714
Zhang, Zhihao,Fang, Zhiwei,Zhou, Junxia,et al. On-Chip Integrated Yb3+-Doped Waveguide Amplifiers on Thin Film Lithium Niobate[J]. MICROMACHINES,2022,13(6).
APA Zhang, Zhihao.,Fang, Zhiwei.,Zhou, Junxia.,Liang, Youting.,Zhou, Yuan.,...&Cheng, Ya.(2022).On-Chip Integrated Yb3+-Doped Waveguide Amplifiers on Thin Film Lithium Niobate.MICROMACHINES,13(6).
MLA Zhang, Zhihao,et al."On-Chip Integrated Yb3+-Doped Waveguide Amplifiers on Thin Film Lithium Niobate".MICROMACHINES 13.6(2022).
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