Microstructure Engineering of Hexagonal Boron Nitride for Single-Photon Emitter Applications
2022-09-05
发表期刊ADVANCED OPTICAL MATERIALS (IF:8.0[JCR-2023],9.0[5-Year])
ISSN2195-1071
EISSN2195-1071
发表状态已发表
DOI10.1002/adom.202200207
摘要

Single-photon emitters (SPEs) can play an important role in future quantum optics. Hexagonal boron nitride (h-BN), a layered insulator (bandgap ≈6 eV), is a promising candidate for next-generation SPEs because of its chemical and thermal stability and high brightness at room temperature. In this review, the microstructures (atomic defects, deformations, and cavities) of h-BN are established and their SPE characteristics are analyzed. Recent progress in the synthesis of high-quality bulk h-BN, monoisotopic h-BN, and epitaxial h-BN films is also demonstrated. Some approaches for achieving SPE arrays are further discussed and the applications of h-BN SPEs in the quantum field are investigated. The success in the preparation of large-scale h-BN and its microstructural engineering provides a promising future in low-dimensional quantum optics. © 2022 Wiley-VCH GmbH.

关键词Chemical stability III-V semiconductors Microstructure Nitrides Particle beams Photons Quantum optics Atomic deformation Batch fabrication Emitter arrays High brightness Microstructure engineering Microstructure of hexagonal boron nitride Quantum applications Single photon emitters Single-photon emitter array Synthesis of hexagonal boron nitride
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收录类别SCI ; SCIE ; EI
语种英语
资助项目Strategic Priority Research Program of the Chinese Academy of Sciences[XDB30000000] ; Youth Innovation Promotion Association of the Chinese Academy of Sciences[2017281] ; Science and Technology Commission of Shanghai Municipality[20501130200,
WOS研究方向Materials Science ; Optics
WOS类目Materials Science, Multidisciplinary ; Optics
WOS记录号WOS:000809607600001
出版者John Wiley and Sons Inc
EI入藏号20222412218581
EI主题词Boron nitride
EI分类号712.1 Semiconducting Materials ; 741.1 Light/Optics ; 801 Chemistry ; 804.2 Inorganic Compounds ; 931.3 Atomic and Molecular Physics ; 931.4 Quantum Theory ; Quantum Mechanics ; 932.1 High Energy Physics ; 951 Materials Science
原始文献类型Article in Press
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文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/192404
专题物质科学与技术学院_特聘教授组_谢晓明组
通讯作者Shi, Zhiyuan; Wu, Tianru
作者单位
1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China
2.Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, 19 A Yuquan Rd, Beijing 100049, Peoples R China
3.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, 1295 Dingxi Rd, Shanghai 200050, Peoples R China
4.ShanghaiTech Univ, Sch Phys Sci & Technol, 393 Middle Huaxia Rd, Shanghai 201210, Peoples R China
推荐引用方式
GB/T 7714
Zhang, Chao,Shi, Zhiyuan,Wu, Tianru,et al. Microstructure Engineering of Hexagonal Boron Nitride for Single-Photon Emitter Applications[J]. ADVANCED OPTICAL MATERIALS,2022.
APA Zhang, Chao,Shi, Zhiyuan,Wu, Tianru,&Xie, Xiaoming.(2022).Microstructure Engineering of Hexagonal Boron Nitride for Single-Photon Emitter Applications.ADVANCED OPTICAL MATERIALS.
MLA Zhang, Chao,et al."Microstructure Engineering of Hexagonal Boron Nitride for Single-Photon Emitter Applications".ADVANCED OPTICAL MATERIALS (2022).
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