Investigation of SiC doped Sb3Te alloy for high-speed and high-thermal stability phase change random access memory applications

doi:10.1016/j.matlet.2016.01.112

	Investigation of SiC doped Sb3Te alloy for high-speed and high-thermal stability phase change random access memory applications
	Guo, Tianqi1,2 ; Song, Sannian 1; Li, Le 1; Shen, Lanlan 1; Wang, Bingyao 3; Liu, Bo 1; Song, Zhitang 1; Qi, Ming 1; Feng, Songlin 1
	2016-04-15
发表期刊	MATERIALS LETTERS (IF:2.7[JCR-2023],2.7[5-Year])
ISSN	0167-577X
卷号	169 页码:203-206
发表状态	已发表
DOI	10.1016/j.matlet.2016.01.112
摘要	Silicon carbide (SiC) doped Sb3Te materials have been investigated for realizing high speed blending with admirable endurance and excellent stability in phase-change applications. (SiC)(055)-Sb3Te alloy is considered to be a potential candidate in view of its high crystallization temperature (199.6 degrees C) and a good data retention ability (118.5 degrees C for 10 years). The prominent advantages can be seen in comparison with those of pure Sb3Te and Ge2Sb2Te5. Moreover, phase change memory cell based on (SiC)(0.85)-Sb3Te achieves ultrafast reversible operation (5 ns) and good endurance (3.9 x 10(4) cycles) easily due to dopants' uniform distribution and a key role in grain refinement. (C) 2016 Elsevier B.V. All rights reserved.
关键词	Nanocomposites SiC Doping Thin films Phase-change memory
收录类别	SCI ; EI
语种	英语
资助项目	National Natural Science Foundation of China[61376006] ; National Natural Science Foundation of China[61504157]
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000370533300051
出版者	ELSEVIER SCIENCE BV
EI入藏号	20160601899086
EI主题词	Blending ; Doping (additives) ; Germanium ; Grain refinement ; Nanocomposite films ; Nanocomposites ; Phase change materials ; Random access storage ; Semiconductor doping ; Silicon carbide ; Thin films
EI分类号	Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconducting Materials:712.1 ; Data Storage, Equipment and Techniques:722.1 ; Nanotechnology:761 ; Chemical Operations:802.3 ; Inorganic Compounds:804.2 ; Solid State Physics:933
WOS关键词	TECHNOLOGY
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1866
专题	物质科学与技术学院物质科学与技术学院_硕士生
通讯作者	Guo, Tianqi; Song, Sannian
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 3.Univ London Imperial Coll Sci Technol & Med, Royal Sch Mines, South Kensington Campus, London SW7 2AZ, England
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Guo, Tianqi,Song, Sannian,Li, Le,et al. Investigation of SiC doped Sb3Te alloy for high-speed and high-thermal stability phase change random access memory applications[J]. MATERIALS LETTERS,2016,169:203-206.
APA	Guo, Tianqi.,Song, Sannian.,Li, Le.,Shen, Lanlan.,Wang, Bingyao.,...&Feng, Songlin.(2016).Investigation of SiC doped Sb3Te alloy for high-speed and high-thermal stability phase change random access memory applications.MATERIALS LETTERS,169,203-206.
MLA	Guo, Tianqi,et al."Investigation of SiC doped Sb3Te alloy for high-speed and high-thermal stability phase change random access memory applications".MATERIALS LETTERS 169(2016):203-206.