Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers

doi:10.1063/1.4954743

	Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers
	Sun, Rui 1,2; Makise, Kazumasa 3; Zhang, Lu 1; Terai, Hirotaka 3; Wang, Zhen1,2,4
	2016-06
发表期刊	AIP ADVANCES (IF:1.4[JCR-2023],1.4[5-Year])
ISSN	2158-3226
卷号	6 期号:6
发表状态	已发表
DOI	10.1063/1.4954743
摘要	We have developed epitaxial NbN/AlN/NbN tunnel junctions on Si (100) substrates with a TiN buffer layer. A 50-nm-thick (200)-oriented TiN thin film was introduced as the buffer layer for epitaxial growth of NbN/AlN/NbN trilayers on Si substrates. The fabricated NbN/AlN/NbN junctions demonstrated excellent tunneling properties with a high gap voltage of 5.5 mV, a large IcRN product of 3.8 mV, a sharp quasiparticle current rise with Delta V-g of 0.4 mV, and a small subgap leakage current. The junction quality factor R-sg/R-N was about 23 for the junction with a J(c) of 47 A/cm(2) and was about 6 for the junction with a J(c) of 3.0 kA/cm(2). X-ray diffraction and transmission electron microscopy observations showed that the NbN/AlN/NbN trilayers were grown epitaxially on the (200)-orientated TiN buffer layer and had a highly crystalline structure with the (200) orientation. (C) 2016 Author(s).
收录类别	SCI ; EI
语种	英语
资助项目	Chinese Academy of Sciences[XDB04010400] ; Chinese Academy of Sciences[XDB04030000]
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000379041400046
出版者	AMER INST PHYSICS
EI入藏号	20162602545498
EI主题词	Buffer layers ; Film growth ; High resolution transmission electron microscopy ; Optical waveguides ; Silicon ; Titanium compounds ; Titanium nitride ; Transmission electron microscopy ; Tunnel junctions ; X ray diffraction
EI分类号	Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Optical Devices and Systems:741.3 ; Inorganic Compounds:804.2 ; Crystalline Solids:933.1 ; Crystal Growth:933.1.2
WOS关键词	CURRENT DENSITY ; FABRICATION ; CIRCUITS ; MIXERS
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1815
专题	物质科学与技术学院_特聘教授组_王镇组
通讯作者	Wang, Zhen
作者单位	1.Chinese Acad Sci, SIMIT, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Natl Inst Informat & Commun Technol, Adv ICT Res Inst, Koganei, Tokyo, Japan 4.Shanghai Tech Univ, Shanghai 201210, Peoples R China
通讯作者单位	上海科技大学
推荐引用方式 GB/T 7714	Sun, Rui,Makise, Kazumasa,Zhang, Lu,et al. Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers[J]. AIP ADVANCES,2016,6(6).
APA	Sun, Rui,Makise, Kazumasa,Zhang, Lu,Terai, Hirotaka,&Wang, Zhen.(2016).Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers.AIP ADVANCES,6(6).
MLA	Sun, Rui,et al."Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers".AIP ADVANCES 6.6(2016).