Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers
Sun, Rui1,2; Makise, Kazumasa3; Zhang, Lu1; Terai, Hirotaka3; Wang, Zhen1,2,4
2016-06
发表期刊AIP ADVANCES
ISSN2158-3226
卷号6期号:6
发表状态已发表
DOI10.1063/1.4954743
摘要We have developed epitaxial NbN/AlN/NbN tunnel junctions on Si (100) substrates with a TiN buffer layer. A 50-nm-thick (200)-oriented TiN thin film was introduced as the buffer layer for epitaxial growth of NbN/AlN/NbN trilayers on Si substrates. The fabricated NbN/AlN/NbN junctions demonstrated excellent tunneling properties with a high gap voltage of 5.5 mV, a large IcRN product of 3.8 mV, a sharp quasiparticle current rise with Delta V-g of 0.4 mV, and a small subgap leakage current. The junction quality factor R-sg/R-N was about 23 for the junction with a J(c) of 47 A/cm(2) and was about 6 for the junction with a J(c) of 3.0 kA/cm(2). X-ray diffraction and transmission electron microscopy observations showed that the NbN/AlN/NbN trilayers were grown epitaxially on the (200)-orientated TiN buffer layer and had a highly crystalline structure with the (200) orientation. (C) 2016 Author(s).
收录类别SCI ; EI
语种英语
资助项目Chinese Academy of Sciences[XDB04010400] ; Chinese Academy of Sciences[XDB04030000]
WOS研究方向Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号WOS:000379041400046
出版者AMER INST PHYSICS
EI入藏号20162602545498
EI主题词Buffer layers ; Film growth ; High resolution transmission electron microscopy ; Optical waveguides ; Silicon ; Titanium compounds ; Titanium nitride ; Transmission electron microscopy ; Tunnel junctions ; X ray diffraction
EI分类号Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Optical Devices and Systems:741.3 ; Inorganic Compounds:804.2 ; Crystalline Solids:933.1 ; Crystal Growth:933.1.2
WOS关键词CURRENT DENSITY ; FABRICATION ; CIRCUITS ; MIXERS
原始文献类型Article
引用统计
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1815
专题物质科学与技术学院_特聘教授组_王镇组
通讯作者Wang, Zhen
作者单位1.Chinese Acad Sci, SIMIT, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.Natl Inst Informat & Commun Technol, Adv ICT Res Inst, Koganei, Tokyo, Japan
4.Shanghai Tech Univ, Shanghai 201210, Peoples R China
通讯作者单位上海科技大学
推荐引用方式
GB/T 7714
Sun, Rui,Makise, Kazumasa,Zhang, Lu,et al. Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers[J]. AIP ADVANCES,2016,6(6).
APA Sun, Rui,Makise, Kazumasa,Zhang, Lu,Terai, Hirotaka,&Wang, Zhen.(2016).Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers.AIP ADVANCES,6(6).
MLA Sun, Rui,et al."Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers".AIP ADVANCES 6.6(2016).
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