Measurement and Characterization of Unstable Pixels of Long-wavelength HgCdTe Infrared Focal Plane Array
2022-04-01
发表期刊JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE (IF:0.5[JCR-2023],0.3[5-Year])
ISSN1598-1657
EISSN2233-4866
卷号22期号:2页码:93-100
发表状态已发表
DOI10.5573/JSTS.2022.22.2.93
摘要

Unstable pixels directly affect the imaging quality of the long-wavelength infrared (LWIR) mercury cadmium telluride (HgCdTe, MCT) focalplane-array (FPA) detector. This study investigates the unstable pixels of LWIR HgCdTe linear arrays with different passivation. According to the different fluctuation characteristics, the unstable pixels are classified into four types: trend-clear type (including the rising and declining pixels), fluctuating type, comb type, and telegraph type. The number of unstable pixels under different bias voltage is counted, which indicates that when the bias voltage is large enough, the number of unstable pixels can increase sharply. By comparing the characteristics of the unstable pixels of two linear arrays with different passivation, we find that the unstable pixels are sensitive to the surface passivation. In addition, the dark currents of unstable pixels and that of normal pixels are compared, inferring that there is no apparent connection between the cause of the instability of the pixels and that of the dark current. © 2022, Institute of Electronics Engineers of Korea. All rights reserved.

关键词Bias voltage Cadmium alloys Cadmium telluride Dark currents II-VI semiconductors Infrared detectors Infrared radiation Mercury amalgams Mercury compounds Pixels Semiconductor alloys Array detectors Fluctuation characteristics Focal-plane arrays Imaging quality Linear-array Long wavelength Long-wavelength infrared Mercury cadmium telluride Surface passivation Unstable pixel
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收录类别SCI ; EI ; SCIE
语种英语
资助项目Shanghai Sailing Program[20YF1456000] ; Innovation Special Fund from the Shanghai Institute of Technical Physics[CX336]
WOS研究方向Engineering ; Physics
WOS类目Engineering, Electrical & Electronic ; Physics, Applied
WOS记录号WOS:000823353000008
出版者Institute of Electronics Engineers of Korea
EI入藏号20221912092653
EI主题词Passivation
EI分类号539.2.1 Protection Methods ; 549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals ; 711.2 Electromagnetic Waves in Relation to Various Structures ; 712.1 Semiconducting Materials ; 713 Electronic Circuits ; 741.1 Light/Optics ; 804 Chemical Products Generally ; 944.7 Radiation Measuring Instruments
原始文献类型Journal article (JA)
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文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/180932
专题信息科学与技术学院_硕士生
信息科学与技术学院_特聘教授组_林春组
信息科学与技术学院_博士生
通讯作者Lin, Chun
作者单位
1.Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China
第一作者单位信息科学与技术学院
通讯作者单位信息科学与技术学院
推荐引用方式
GB/T 7714
Zhang, Yu,Zhou, Songmin,Li, Xun,et al. Measurement and Characterization of Unstable Pixels of Long-wavelength HgCdTe Infrared Focal Plane Array[J]. JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE,2022,22(2):93-100.
APA Zhang, Yu,Zhou, Songmin,Li, Xun,Wang, Xi,Zhu, Liqi,&Lin, Chun.(2022).Measurement and Characterization of Unstable Pixels of Long-wavelength HgCdTe Infrared Focal Plane Array.JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE,22(2),93-100.
MLA Zhang, Yu,et al."Measurement and Characterization of Unstable Pixels of Long-wavelength HgCdTe Infrared Focal Plane Array".JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 22.2(2022):93-100.
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