ShanghaiTech University Knowledge Management System
Phase engineering of Cr5Te8 with colossal anomalous Hall effect | |
2022-04 | |
发表期刊 | NATURE ELECTRONICS (IF:33.7[JCR-2023],39.2[5-Year]) |
ISSN | 2520-1131 |
EISSN | 2520-1131 |
卷号 | 5期号:4页码:224-232 |
发表状态 | 已发表 |
DOI | 10.1038/s41928-022-00754-6 |
摘要 | Two-dimensional materials that are intrinsically ferromagnetic are crucial for the development of compact spintronic devices. However, most non-layered 2D magnets with a strong ferromagnetic order are difficult to synthesize. Here we show that the flakes of trigonal and monoclinic Cr5Te8 can be grown via a chemical vapour deposition method. Using magneto-optical and magnetotransport measurements, we show that both phases exhibit robust ferromagnetism with strong perpendicular anisotropy at thicknesses of a few nanometres. A high Curie temperature of up to 200 K can be obtained by manipulating the phase structure and thickness. We also observe a colossal anomalous Hall effect in the more structurally distorted monoclinic Cr5Te8, with an anomalous Hall conductivity of 650 Ω−1 cm−1 and anomalous Hall angle of 5%. © 2022, The Author(s), under exclusive licence to Springer Nature Limited. |
关键词 | Chemical vapor deposition Chromium compounds Ferromagnetic materials Tellurium compounds Anomalous hall effects Chemical vapor deposition methods Ferromagnetic orderings Magneto-optical measurements Magneto-transport measurement Monoclinics Nanometres Perpendicular anisotropy Spintronics device Two-dimensional materials |
URL | 查看原文 |
收录类别 | SCI ; SCIE ; EI |
语种 | 英语 |
资助项目 | National Research Foundation Singapore[ |
WOS研究方向 | Engineering |
WOS类目 | Engineering, Electrical & Electronic |
WOS记录号 | WOS:000788302100006 |
出版者 | Nature Research |
EI入藏号 | 20221812045535 |
EI主题词 | Ferromagnetism |
EI分类号 | 701.2 Magnetism: Basic Concepts and Phenomena ; 708.4 Magnetic Materials ; 802.2 Chemical Reactions |
原始文献类型 | Journal article (JA) |
引用统计 | 正在获取...
|
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/178434 |
专题 | 信息科学与技术学院_PI研究组_杨雨梦组 |
通讯作者 | Li, Xingji; Zhou, Jiadong; Lin, Junhao; Liu, Zheng |
作者单位 | 1.Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore, Singapore 2.Southern Univ Sci & Technol, Dept Phys, Shenzhen, Peoples R China 3.Southern Univ Sci & Technol, Shenzhen Key Lab Adv Quantum Funct Mat & Devices, Shenzhen, Peoples R China 4.Harbin Inst Technol, Sch Mat Sci & Engn, Harbin, Peoples R China 5.Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore, Singapore 6.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai Engn Res Ctr Energy Efficient & Custom A, Shanghai, Peoples R China 7.Beijing Inst Technol, Sch Phys, Key Lab Adv Optoelect Quantum Architecture & Meas, Ctr Quantum Phys, Beijing, Peoples R China 8.CINTRA CNRS NTU THALES, UMI 3288, Res Techno Plaza, Singapore, Singapore 9.Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore, Singapore |
推荐引用方式 GB/T 7714 | Tang, Bijun,Wang, Xiaowei,Han, Mengjiao,et al. Phase engineering of Cr5Te8 with colossal anomalous Hall effect[J]. NATURE ELECTRONICS,2022,5(4):224-232. |
APA | Tang, Bijun.,Wang, Xiaowei.,Han, Mengjiao.,Xu, Xiaodong.,Zhang, Zhaowei.,...&Liu, Zheng.(2022).Phase engineering of Cr5Te8 with colossal anomalous Hall effect.NATURE ELECTRONICS,5(4),224-232. |
MLA | Tang, Bijun,et al."Phase engineering of Cr5Te8 with colossal anomalous Hall effect".NATURE ELECTRONICS 5.4(2022):224-232. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 |
修改评论
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。