Phase engineering of Cr5Te8 with colossal anomalous Hall effect
2022-04
发表期刊NATURE ELECTRONICS (IF:33.7[JCR-2023],39.2[5-Year])
ISSN2520-1131
EISSN2520-1131
卷号5期号:4页码:224-232
发表状态已发表
DOI10.1038/s41928-022-00754-6
摘要

Two-dimensional materials that are intrinsically ferromagnetic are crucial for the development of compact spintronic devices. However, most non-layered 2D magnets with a strong ferromagnetic order are difficult to synthesize. Here we show that the flakes of trigonal and monoclinic Cr5Te8 can be grown via a chemical vapour deposition method. Using magneto-optical and magnetotransport measurements, we show that both phases exhibit robust ferromagnetism with strong perpendicular anisotropy at thicknesses of a few nanometres. A high Curie temperature of up to 200 K can be obtained by manipulating the phase structure and thickness. We also observe a colossal anomalous Hall effect in the more structurally distorted monoclinic Cr5Te8, with an anomalous Hall conductivity of 650 Ω−1 cm−1 and anomalous Hall angle of 5%. © 2022, The Author(s), under exclusive licence to Springer Nature Limited.

关键词Chemical vapor deposition Chromium compounds Ferromagnetic materials Tellurium compounds Anomalous hall effects Chemical vapor deposition methods Ferromagnetic orderings Magneto-optical measurements Magneto-transport measurement Monoclinics Nanometres Perpendicular anisotropy Spintronics device Two-dimensional materials
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收录类别SCI ; SCIE ; EI
语种英语
资助项目National Research Foundation Singapore[
WOS研究方向Engineering
WOS类目Engineering, Electrical & Electronic
WOS记录号WOS:000788302100006
出版者Nature Research
EI入藏号20221812045535
EI主题词Ferromagnetism
EI分类号701.2 Magnetism: Basic Concepts and Phenomena ; 708.4 Magnetic Materials ; 802.2 Chemical Reactions
原始文献类型Journal article (JA)
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文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/178434
专题信息科学与技术学院_PI研究组_杨雨梦组
通讯作者Li, Xingji; Zhou, Jiadong; Lin, Junhao; Liu, Zheng
作者单位
1.Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore, Singapore
2.Southern Univ Sci & Technol, Dept Phys, Shenzhen, Peoples R China
3.Southern Univ Sci & Technol, Shenzhen Key Lab Adv Quantum Funct Mat & Devices, Shenzhen, Peoples R China
4.Harbin Inst Technol, Sch Mat Sci & Engn, Harbin, Peoples R China
5.Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore, Singapore
6.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai Engn Res Ctr Energy Efficient & Custom A, Shanghai, Peoples R China
7.Beijing Inst Technol, Sch Phys, Key Lab Adv Optoelect Quantum Architecture & Meas, Ctr Quantum Phys, Beijing, Peoples R China
8.CINTRA CNRS NTU THALES, UMI 3288, Res Techno Plaza, Singapore, Singapore
9.Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore, Singapore
推荐引用方式
GB/T 7714
Tang, Bijun,Wang, Xiaowei,Han, Mengjiao,et al. Phase engineering of Cr5Te8 with colossal anomalous Hall effect[J]. NATURE ELECTRONICS,2022,5(4):224-232.
APA Tang, Bijun.,Wang, Xiaowei.,Han, Mengjiao.,Xu, Xiaodong.,Zhang, Zhaowei.,...&Liu, Zheng.(2022).Phase engineering of Cr5Te8 with colossal anomalous Hall effect.NATURE ELECTRONICS,5(4),224-232.
MLA Tang, Bijun,et al."Phase engineering of Cr5Te8 with colossal anomalous Hall effect".NATURE ELECTRONICS 5.4(2022):224-232.
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