ShanghaiTech University Knowledge Management System
| Flexible Nanocellulose Gated Pseudo-Diode for Neuromorphic Electronic Applications | |
| 2022-05 | |
| 发表期刊 | IEEE ELECTRON DEVICE LETTERS (IF:4.1[JCR-2023],4.2[5-Year]) |
| ISSN | 0741-3106 |
| 发表状态 | 已发表 |
| DOI | 10.1109/LED.2022.3160494 |
| 摘要 | Flexible nanocellulose-based solid-state electrolyte gated indium-tin-oxide (ITO) pseudo-diode is proposed. The device exhibits good electrical performances against mechanical stress. With gate programming, pseudo-diode performances are modulated correspondingly. Furthermore, effective synaptic weight updating strategy is proposed, resulting in a high recognition accuracy of ∼91.7% for MNIST handwritten digits. The flexible nanocellulose gated pseudo-diode would have potentials in wearable intelligent platforms. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 引用统计 | 正在获取...
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| 文献类型 | 期刊论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/176067 |
| 专题 | 个人在本单位外知识产出 |
| 通讯作者 | Li Qiang Zhu |
| 作者单位 | 1.School of Physical Science and Technology, Ningbo University, Ningbo, China 2.Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, China |
| 推荐引用方式 GB/T 7714 | Wei Sheng Wang,Zheng Yu Ren,Zhi Wen Shi,et al. Flexible Nanocellulose Gated Pseudo-Diode for Neuromorphic Electronic Applications[J]. IEEE ELECTRON DEVICE LETTERS,2022. |
| APA | Wei Sheng Wang,Zheng Yu Ren,Zhi Wen Shi,Hui Xiao,Zheng Yu Ren, ZhiYu Heng Zeng,&Li Qiang Zhu.(2022).Flexible Nanocellulose Gated Pseudo-Diode for Neuromorphic Electronic Applications.IEEE ELECTRON DEVICE LETTERS. |
| MLA | Wei Sheng Wang,et al."Flexible Nanocellulose Gated Pseudo-Diode for Neuromorphic Electronic Applications".IEEE ELECTRON DEVICE LETTERS (2022). |
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