Monolithic Integration of Released and Solidly Mounted RF Acoustic Devices on Heterogeneous Substrate
2022-01
会议录名称IEEE SYMPOSIUM ON MASS STORAGE SYSTEMS AND TECHNOLOGIES
ISSN2160-1968
卷号2022-January
页码1026-1029
发表状态已发表
DOI10.1109/MEMS51670.2022.9699723
摘要

This work first presents the monolithic integration of the solidly mounted surface acoustic wave (SAW) devices and the released Lamb wave devices on the Y128-cut LiNbO3-on-silicon (LNOSi) substrate. The Rayleigh mode SAW resonators showing a phase velocity (vp) of about 3700 m/s and effective electromechanical coupling coefficients (k2eff) between 7.3% to 9.5% are suitable for low-frequency and small-band filters, while the first order antisymmetric Lamb wave (A1) resonators showing scalable vp from 9476 m/s to 15280 m/s and k2eff between 9.2% to 23.4% are suitable for mid-, high-frequency and large-bandwidth filters. The Al mode and Rayleigh mode filters were also fabricated and measured, exhibiting 3-dB fractional bandwidths (FBW) of 5.5% and 2.4% around 2.1 GHz, respectively. The hybrid acoustic devices with complementary properties on LNOSi substrate show a great potential for applications in the hundred-filter sub-6 GHz RF front-ends. © 2022 IEEE.

会议录编者/会议主办者IEEE ; IEEE MEMS Technical Community
关键词Acoustic resonators Acoustic surface wave filters Bandwidth Electromechanical coupling Integration MEMS Monolithic integrated circuits Substrates Surface waves Acoustic filters Effective electro-mechanical coupling coefficients Heterogeneous substrates Hybrid acoustic device Lamb wave devices Linbo3-on-silicon Monolithic integration Rayleigh mode Silicon substrates Surface acoustic wave resonators
会议名称35th IEEE International Conference on Micro Electro Mechanical Systems Conference, MEMS 2022
出版地345 E 47TH ST, NEW YORK, NY 10017 USA
会议地点Tokyo, Japan
会议日期January 9, 2022 - January 13, 2022
URL查看原文
收录类别EI ; CPCI ; CPCI-S
语种英语
资助项目National Key R&D Program of China[
WOS研究方向Engineering ; Science & Technology - Other Topics
WOS类目Engineering, Electrical & Electronic ; Engineering, Mechanical ; Nanoscience & Nanotechnology
WOS记录号WOS:000784358100261
出版者IEEE Computer Society
EI入藏号20221211807221
EI主题词Silicon
EI分类号549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals ; 704.2 Electric Equipment ; 714.2 Semiconductor Devices and Integrated Circuits ; 716.1 Information Theory and Signal Processing ; 752.1 Acoustic Devices ; 921.2 Calculus
原始文献类型Conference article (CA)
来源库IEEE
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文献类型会议论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/167143
专题信息科学与技术学院_博士生
信息科学与技术学院_PI研究组_吴涛组
通讯作者Zhang, Shibin; Wu, Tao; Ou, Xin
作者单位
1.Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
3.ShanghaiTech Univ, Shanghai 201210, Peoples R China
第一作者单位上海科技大学
通讯作者单位上海科技大学
推荐引用方式
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Wu, Jinbo,Zhang, Shibin,Zhou, Hongyan,et al. Monolithic Integration of Released and Solidly Mounted RF Acoustic Devices on Heterogeneous Substrate[C]//IEEE, IEEE MEMS Technical Community. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE Computer Society,2022:1026-1029.
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