Field-effect transistors of high-mobility few-layer SnSe2

doi:10.1063/1.4967744

	Field-effect transistors of high-mobility few-layer SnSe2
	Guo, Chenglei1,2,3 ; Tian, Zhen1,2,3 ; Xiao, Yanjun2 ; Mi, Qixi2 ; Xue, Jiamin1,2,3,4
	2016-11-14
发表期刊	APPLIED PHYSICS LETTERS (IF:3.5[JCR-2023],3.5[5-Year])
ISSN	0003-6951
卷号	109 期号:20
发表状态	已发表
DOI	10.1063/1.4967744
摘要	We report the transport properties of mechanically exfoliated few-layer SnSe2 flakes, whose mobility is found to be similar to 85 cm(2) V-1 s(-1) at 300 K, higher than those of the majority of few-layer transitional metal dichalcogenides. The mobility increases strongly with decreased temperature, indicating a phonon limited transport. The conductivity of the semiconducting SnSe2 shows a metallic behavior, which is explained by two competing factors involving the different temperature dependence of mobility and carrier density. The Fermi level is found to be 87 meV below the conduction band minima (CBM) at 300K and 12 meV below the CBM at 78 K, resulting from a heavy n-type doping. Previous studies have found SnSe2 field-effect transistors to be very difficult to turn off. We find the limiting factor to be the flake thickness compared with the maximum depletion width. With fully depleted devices, we are able to achieve a current on-off ratio of similar to 10(5). These results demonstrate the great potential of SnSe2 as a two dimensional (2D) semiconducting material and are helpful for our understanding of other heavily doped 2D materials. Published by AIP Publishing.
收录类别	SCI ; EI
语种	英语
资助项目	Strategic Priority Research Program (B) of the Chinese Academy of Sciences[XDB04030000]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000388000000045
出版者	AMER INST PHYSICS
EI入藏号	20164703045913
EI主题词	Temperature distribution
EI分类号	Thermodynamics:641.1 ; Semiconductor Devices and Integrated Circuits:714.2
WOS关键词	THERMAL-CONDUCTIVITY ; BAND-STRUCTURE ; HOLE MOBILITY ; MOS2 ; SEMICONDUCTOR ; CRYSTALS
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1640
专题	物质科学与技术学院物质科学与技术学院_PI研究组_薛加民组物质科学与技术学院_PI研究组_米启兮组物质科学与技术学院_PI研究组_林柏霖组物质科学与技术学院_博士生
通讯作者	Xue, Jiamin
作者单位	1.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Chinese Acad Sci, Ctr Excellence Superconducting Elect CENSE, Shanghai 200050, Peoples R China
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Guo, Chenglei,Tian, Zhen,Xiao, Yanjun,et al. Field-effect transistors of high-mobility few-layer SnSe2[J]. APPLIED PHYSICS LETTERS,2016,109(20).
APA	Guo, Chenglei,Tian, Zhen,Xiao, Yanjun,Mi, Qixi,&Xue, Jiamin.(2016).Field-effect transistors of high-mobility few-layer SnSe2.APPLIED PHYSICS LETTERS,109(20).
MLA	Guo, Chenglei,et al."Field-effect transistors of high-mobility few-layer SnSe2".APPLIED PHYSICS LETTERS 109.20(2016).