Field-effect transistors of high-mobility few-layer SnSe2
Guo, Chenglei1,2,3; Tian, Zhen1,2,3; Xiao, Yanjun2; Mi, Qixi2; Xue, Jiamin1,2,3,4
2016-11-14
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume109Issue:20
Status已发表
DOI10.1063/1.4967744
AbstractWe report the transport properties of mechanically exfoliated few-layer SnSe2 flakes, whose mobility is found to be similar to 85 cm(2) V-1 s(-1) at 300 K, higher than those of the majority of few-layer transitional metal dichalcogenides. The mobility increases strongly with decreased temperature, indicating a phonon limited transport. The conductivity of the semiconducting SnSe2 shows a metallic behavior, which is explained by two competing factors involving the different temperature dependence of mobility and carrier density. The Fermi level is found to be 87 meV below the conduction band minima (CBM) at 300K and 12 meV below the CBM at 78 K, resulting from a heavy n-type doping. Previous studies have found SnSe2 field-effect transistors to be very difficult to turn off. We find the limiting factor to be the flake thickness compared with the maximum depletion width. With fully depleted devices, we are able to achieve a current on-off ratio of similar to 10(5). These results demonstrate the great potential of SnSe2 as a two dimensional (2D) semiconducting material and are helpful for our understanding of other heavily doped 2D materials. Published by AIP Publishing.
Indexed BySCI ; EI
Language英语
Funding ProjectStrategic Priority Research Program (B) of the Chinese Academy of Sciences[XDB04030000]
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000388000000045
PublisherAMER INST PHYSICS
EI Accession Number20164703045913
EI KeywordsTemperature distribution
EI Classification NumberThermodynamics:641.1 ; Semiconductor Devices and Integrated Circuits:714.2
WOS KeywordTHERMAL-CONDUCTIVITY ; BAND-STRUCTURE ; HOLE MOBILITY ; MOS2 ; SEMICONDUCTOR ; CRYSTALS
Original Document TypeArticle
Citation statistics
Cited Times:59[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttps://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1640
Collection物质科学与技术学院
物质科学与技术学院_PI研究组_薛加民组
物质科学与技术学院_PI研究组_米启兮组
物质科学与技术学院_PI研究组_林柏霖组
物质科学与技术学院_博士生
Corresponding AuthorXue, Jiamin
Affiliation1.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
4.Chinese Acad Sci, Ctr Excellence Superconducting Elect CENSE, Shanghai 200050, Peoples R China
First Author AffilicationSchool of Physical Science and Technology
Corresponding Author AffilicationSchool of Physical Science and Technology
Recommended Citation
GB/T 7714
Guo, Chenglei,Tian, Zhen,Xiao, Yanjun,et al. Field-effect transistors of high-mobility few-layer SnSe2[J]. APPLIED PHYSICS LETTERS,2016,109(20).
APA Guo, Chenglei,Tian, Zhen,Xiao, Yanjun,Mi, Qixi,&Xue, Jiamin.(2016).Field-effect transistors of high-mobility few-layer SnSe2.APPLIED PHYSICS LETTERS,109(20).
MLA Guo, Chenglei,et al."Field-effect transistors of high-mobility few-layer SnSe2".APPLIED PHYSICS LETTERS 109.20(2016).
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