Topological surface state of alpha-Sn on InSb(001) as studied by photoemission
Scholz, M. R.1,2; Rogalev, V. A.1,2; Dudy, L.1,2; Reis, F.1,2; Adler, F.1,2; Aulbach, J.1,2; Collins-McIntyre, L. J.3; Duffy, L. B.3; Yang, H. F.3,4; Chen, Y. L.3; Hesjedal, T.3; Liu, Z. K.4,5; Hoesch, M.5; Muff, S.6,7; Dil, J. H.6,7; Schaefer, J.1,2; Claessen, R.1,2
Source PublicationPHYSICAL REVIEW B
AbstractWe report on the electronic structure of the elemental topological semimetal alpha-Sn on InSb(001). High-resolution angle-resolved photoemission data allow us to observe the topological surface state (TSS) that is degenerate with the bulk band structure and show that the former is unaffected by different surface reconstructions. An unintentional p-type doping of the as-grown films was compensated by deposition of potassium or tellurium after the growth, thereby shifting the Dirac point of the surface state below the Fermi level. We showthat, while having the potential to break time-reversal symmetry, iron impurities with a coverage of up to 0.25 monolayers do not have any further impact on the surface state beyond that of K or Te. Furthermore, we have measured the spin-momentum locking of electrons from the TSS by means of spin-resolved photoemission. Our results show that the spin vector lies fully in-plane, but it also has a finite radial component. Finally, we analyze the decay of photoholes introduced in the photoemission process, and by this gain insight into the many-body interactions in the system. Surprisingly, we extract quasiparticle lifetimes comparable to other topological materials where the TSS is located within a bulk band gap. We argue that the main decay of photoholes is caused by intraband scattering, while scattering into bulk states is suppressed due to different orbital symmetries of bulk and surface states.
Indexed BySCI
Funding ProjectCollaborative Research Center ToCoTronics in Wurzburg[SFB 1170]
WOS Research AreaMaterials Science ; Physics
WOS SubjectMaterials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000423989200001
Original Document TypeArticle
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Cited Times:15[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Corresponding AuthorScholz, M. R.
Affiliation1.Univ Wurzburg, Phys Inst, D-97074 Wurzburg, Germany
2.Univ Wurzburg, Rontgen Ctr Complex Mat Syst, D-97074 Wurzburg, Germany
3.Univ Oxford, Phys Dept, Clarendon Lab, Oxford OX1 3PU, England
4.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
5.Diamond Light Source, Didcot OX11 0DE, Oxon, England
6.Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland
7.Ecole Polytech Fed Lausanne, Inst Phys, CH-1015 Lausanne, Switzerland
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Scholz, M. R.,Rogalev, V. A.,Dudy, L.,et al. Topological surface state of alpha-Sn on InSb(001) as studied by photoemission[J]. PHYSICAL REVIEW B,2018,97(7).
APA Scholz, M. R..,Rogalev, V. A..,Dudy, L..,Reis, F..,Adler, F..,...&Claessen, R..(2018).Topological surface state of alpha-Sn on InSb(001) as studied by photoemission.PHYSICAL REVIEW B,97(7).
MLA Scholz, M. R.,et al."Topological surface state of alpha-Sn on InSb(001) as studied by photoemission".PHYSICAL REVIEW B 97.7(2018).
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