Topological surface state of alpha-Sn on InSb(001) as studied by photoemission

doi:10.1103/PhysRevB.97.075101

	Topological surface state of alpha-Sn on InSb(001) as studied by photoemission
	Scholz, M. R.1,2; Rogalev, V. A.1,2; Dudy, L.1,2; Reis, F.1,2; Adler, F.1,2; Aulbach, J.1,2; Collins-McIntyre, L. J.3; Duffy, L. B.3; Yang, H. F.3,4 ; Chen, Y. L.3; Hesjedal, T.3; Liu, Z. K.4,5 ; Hoesch, M.5; Muff, S.6,7; Dil, J. H.6,7; Schaefer, J.1,2; Claessen, R.1,2
	2018-02
发表期刊	PHYSICAL REVIEW B (IF:3.2[JCR-2023],3.3[5-Year])
ISSN	2469-9950
卷号	97 期号:7
发表状态	已发表
DOI	10.1103/PhysRevB.97.075101
摘要	We report on the electronic structure of the elemental topological semimetal alpha-Sn on InSb(001). High-resolution angle-resolved photoemission data allow us to observe the topological surface state (TSS) that is degenerate with the bulk band structure and show that the former is unaffected by different surface reconstructions. An unintentional p-type doping of the as-grown films was compensated by deposition of potassium or tellurium after the growth, thereby shifting the Dirac point of the surface state below the Fermi level. We showthat, while having the potential to break time-reversal symmetry, iron impurities with a coverage of up to 0.25 monolayers do not have any further impact on the surface state beyond that of K or Te. Furthermore, we have measured the spin-momentum locking of electrons from the TSS by means of spin-resolved photoemission. Our results show that the spin vector lies fully in-plane, but it also has a finite radial component. Finally, we analyze the decay of photoholes introduced in the photoemission process, and by this gain insight into the many-body interactions in the system. Surprisingly, we extract quasiparticle lifetimes comparable to other topological materials where the TSS is located within a bulk band gap. We argue that the main decay of photoholes is caused by intraband scattering, while scattering into bulk states is suppressed due to different orbital symmetries of bulk and surface states.
收录类别	SCI ; SCIE
语种	英语
资助项目	Collaborative Research Center ToCoTronics in Wurzburg[SFB 1170]
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000423989200001
出版者	AMER PHYSICAL SOC
WOS关键词	ELECTRONIC-STRUCTURE ; INSULATORS ; EPITAXY ; GROWTH
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/16228
专题	物质科学与技术学院_特聘教授组_陈宇林物质科学与技术学院_PI研究组_柳仲楷组
通讯作者	Scholz, M. R.
作者单位	1.Univ Wurzburg, Phys Inst, D-97074 Wurzburg, Germany 2.Univ Wurzburg, Rontgen Ctr Complex Mat Syst, D-97074 Wurzburg, Germany 3.Univ Oxford, Phys Dept, Clarendon Lab, Oxford OX1 3PU, England 4.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 5.Diamond Light Source, Didcot OX11 0DE, Oxon, England 6.Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland 7.Ecole Polytech Fed Lausanne, Inst Phys, CH-1015 Lausanne, Switzerland
推荐引用方式 GB/T 7714	Scholz, M. R.,Rogalev, V. A.,Dudy, L.,et al. Topological surface state of alpha-Sn on InSb(001) as studied by photoemission[J]. PHYSICAL REVIEW B,2018,97(7).
APA	Scholz, M. R..,Rogalev, V. A..,Dudy, L..,Reis, F..,Adler, F..,...&Claessen, R..(2018).Topological surface state of alpha-Sn on InSb(001) as studied by photoemission.PHYSICAL REVIEW B,97(7).
MLA	Scholz, M. R.,et al."Topological surface state of alpha-Sn on InSb(001) as studied by photoemission".PHYSICAL REVIEW B 97.7(2018).