Topological surface state of alpha-Sn on InSb(001) as studied by photoemission
Scholz, M. R.1,2; Rogalev, V. A.1,2; Dudy, L.1,2; Reis, F.1,2; Adler, F.1,2; Aulbach, J.1,2; Collins-McIntyre, L. J.3; Duffy, L. B.3; Yang, H. F.3,4; Chen, Y. L.3; Hesjedal, T.3; Liu, Z. K.4,5; Hoesch, M.5; Muff, S.6,7; Dil, J. H.6,7; Schaefer, J.1,2; Claessen, R.1,2
2018-02
Source PublicationPHYSICAL REVIEW B
ISSN2469-9950
Volume97Issue:7
Status已发表
DOI10.1103/PhysRevB.97.075101
AbstractWe report on the electronic structure of the elemental topological semimetal alpha-Sn on InSb(001). High-resolution angle-resolved photoemission data allow us to observe the topological surface state (TSS) that is degenerate with the bulk band structure and show that the former is unaffected by different surface reconstructions. An unintentional p-type doping of the as-grown films was compensated by deposition of potassium or tellurium after the growth, thereby shifting the Dirac point of the surface state below the Fermi level. We showthat, while having the potential to break time-reversal symmetry, iron impurities with a coverage of up to 0.25 monolayers do not have any further impact on the surface state beyond that of K or Te. Furthermore, we have measured the spin-momentum locking of electrons from the TSS by means of spin-resolved photoemission. Our results show that the spin vector lies fully in-plane, but it also has a finite radial component. Finally, we analyze the decay of photoholes introduced in the photoemission process, and by this gain insight into the many-body interactions in the system. Surprisingly, we extract quasiparticle lifetimes comparable to other topological materials where the TSS is located within a bulk band gap. We argue that the main decay of photoholes is caused by intraband scattering, while scattering into bulk states is suppressed due to different orbital symmetries of bulk and surface states.
Indexed BySCI
Language英语
Funding ProjectCollaborative Research Center ToCoTronics in Wurzburg[SFB 1170]
WOS Research AreaMaterials Science ; Physics
WOS SubjectMaterials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000423989200001
PublisherAMER PHYSICAL SOC
WOS KeywordELECTRONIC-STRUCTURE ; INSULATORS ; EPITAXY ; GROWTH
Original Document TypeArticle
Citation statistics
Cited Times:15[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttps://kms.shanghaitech.edu.cn/handle/2MSLDSTB/16228
Collection物质科学与技术学院_特聘教授组_陈宇林
物质科学与技术学院_PI研究组_柳仲楷组
Corresponding AuthorScholz, M. R.
Affiliation1.Univ Wurzburg, Phys Inst, D-97074 Wurzburg, Germany
2.Univ Wurzburg, Rontgen Ctr Complex Mat Syst, D-97074 Wurzburg, Germany
3.Univ Oxford, Phys Dept, Clarendon Lab, Oxford OX1 3PU, England
4.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
5.Diamond Light Source, Didcot OX11 0DE, Oxon, England
6.Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland
7.Ecole Polytech Fed Lausanne, Inst Phys, CH-1015 Lausanne, Switzerland
Recommended Citation
GB/T 7714
Scholz, M. R.,Rogalev, V. A.,Dudy, L.,et al. Topological surface state of alpha-Sn on InSb(001) as studied by photoemission[J]. PHYSICAL REVIEW B,2018,97(7).
APA Scholz, M. R..,Rogalev, V. A..,Dudy, L..,Reis, F..,Adler, F..,...&Claessen, R..(2018).Topological surface state of alpha-Sn on InSb(001) as studied by photoemission.PHYSICAL REVIEW B,97(7).
MLA Scholz, M. R.,et al."Topological surface state of alpha-Sn on InSb(001) as studied by photoemission".PHYSICAL REVIEW B 97.7(2018).
Files in This Item: Download All
File Name/Size DocType Version Access License
10.1103@PhysRevB.97.(3877KB)期刊论文作者原稿开放获取UnknownView Download
Related Services
Usage statistics
Scholar Google
Similar articles in Scholar Google
[Scholz, M. R.]'s Articles
[Rogalev, V. A.]'s Articles
[Dudy, L.]'s Articles
Baidu academic
Similar articles in Baidu academic
[Scholz, M. R.]'s Articles
[Rogalev, V. A.]'s Articles
[Dudy, L.]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Scholz, M. R.]'s Articles
[Rogalev, V. A.]'s Articles
[Dudy, L.]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: 10.1103@PhysRevB.97.075101.pdf
Format: Adobe PDF
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.