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Dark current simulation and verification of In-0.83 Ga-0.17 As detector with superlattice electron barrier | |
2016-12 | |
发表期刊 | JOURNAL OF INFRARED AND MILLIMETER WAVES (IF:0.6[JCR-2023],0.5[5-Year]) |
ISSN | 1001-9014 |
卷号 | 35期号:6页码:662-666 |
发表状态 | 已发表 |
DOI | 10.11972/j.issn.10019014.2016.06.005 |
摘要 | To obtain the dark current mechanism of In-0.83 Ga-0.17 As detector, TCAD software was used to simulate its dark current property. The detectors include two structures with and without the super lattice (SL) electronic barrier in the InGaAs absorbed layer. At the same time, the detector has been fabricated to verify the simulation results. The results show that SL barrier can adjust the energy band structure and change the transport property of the carriers, and thus suppress the SRH recombination and decrease the dark current. Simulation results are in good agreement with experimental results. The influence of the location and periods of SL barrier on dark current was also simulated. The SL electronic barrier structure was optimized. |
关键词 | In-0.83 Ga-0.17 As detector super lattice(SL) electronic barrier dark current TCAD simulation |
收录类别 | SCI |
语种 | 英语 |
资助项目 | National Natural Science Foundation of China[61205105] ; National Natural Science Foundation of China[61376052] ; National Natural Science Foundation of China[61475179] |
WOS研究方向 | Optics |
WOS类目 | Optics |
WOS记录号 | WOS:000392261700005 |
出版者 | SCIENCE PRESS |
WOS关键词 | MU-M ; EXTENDED-WAVELENGTH ; PHOTODETECTOR ; LIFETIME ; ARRAYS |
原始文献类型 | Article |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1609 |
专题 | 物质科学与技术学院 信息科学与技术学院_特聘教授组_龚海梅组 物质科学与技术学院_硕士生 |
通讯作者 | Gong Hai-Mei |
作者单位 | 1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Labs Transducer Technol, Shanghai 200083, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China |
第一作者单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Li Qing-Fa,Li Xue,Tang Heng-Jing,et al. Dark current simulation and verification of In-0.83 Ga-0.17 As detector with superlattice electron barrier[J]. JOURNAL OF INFRARED AND MILLIMETER WAVES,2016,35(6):662-666. |
APA | Li Qing-Fa.,Li Xue.,Tang Heng-Jing.,Deng Shuang-Yan.,Cao Gao-Qi.,...&Gong Hai-Mei.(2016).Dark current simulation and verification of In-0.83 Ga-0.17 As detector with superlattice electron barrier.JOURNAL OF INFRARED AND MILLIMETER WAVES,35(6),662-666. |
MLA | Li Qing-Fa,et al."Dark current simulation and verification of In-0.83 Ga-0.17 As detector with superlattice electron barrier".JOURNAL OF INFRARED AND MILLIMETER WAVES 35.6(2016):662-666. |
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