Dark current simulation and verification of In-0.83 Ga-0.17 As detector with superlattice electron barrier

doi:10.11972/j.issn.10019014.2016.06.005

	Dark current simulation and verification of In-0.83 Ga-0.17 As detector with superlattice electron barrier
	Li Qing-Fa1,2,3,4 ; Li Xue 1,2; Tang Heng-Jing 1,2; Deng Shuang-Yan 1,2; Cao Gao-Qi 1,2,3; Shao Xiu-Mei 1,2; Gong Hai-Mei1,2
	2016-12
发表期刊	JOURNAL OF INFRARED AND MILLIMETER WAVES (IF:0.6[JCR-2023],0.5[5-Year])
ISSN	1001-9014
卷号	35 期号:6 页码:662-666
发表状态	已发表
DOI	10.11972/j.issn.10019014.2016.06.005
摘要	To obtain the dark current mechanism of In-0.83 Ga-0.17 As detector, TCAD software was used to simulate its dark current property. The detectors include two structures with and without the super lattice (SL) electronic barrier in the InGaAs absorbed layer. At the same time, the detector has been fabricated to verify the simulation results. The results show that SL barrier can adjust the energy band structure and change the transport property of the carriers, and thus suppress the SRH recombination and decrease the dark current. Simulation results are in good agreement with experimental results. The influence of the location and periods of SL barrier on dark current was also simulated. The SL electronic barrier structure was optimized.
关键词	In-0.83 Ga-0.17 As detector super lattice(SL) electronic barrier dark current TCAD simulation
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[61205105] ; National Natural Science Foundation of China[61376052] ; National Natural Science Foundation of China[61475179]
WOS研究方向	Optics
WOS类目	Optics
WOS记录号	WOS:000392261700005
出版者	SCIENCE PRESS
WOS关键词	MU-M ; EXTENDED-WAVELENGTH ; PHOTODETECTOR ; LIFETIME ; ARRAYS
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1609
专题	物质科学与技术学院信息科学与技术学院_特聘教授组_龚海梅组物质科学与技术学院_硕士生
通讯作者	Gong Hai-Mei
作者单位	1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Labs Transducer Technol, Shanghai 200083, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
第一作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Li Qing-Fa,Li Xue,Tang Heng-Jing,et al. Dark current simulation and verification of In-0.83 Ga-0.17 As detector with superlattice electron barrier[J]. JOURNAL OF INFRARED AND MILLIMETER WAVES,2016,35(6):662-666.
APA	Li Qing-Fa.,Li Xue.,Tang Heng-Jing.,Deng Shuang-Yan.,Cao Gao-Qi.,...&Gong Hai-Mei.(2016).Dark current simulation and verification of In-0.83 Ga-0.17 As detector with superlattice electron barrier.JOURNAL OF INFRARED AND MILLIMETER WAVES,35(6),662-666.
MLA	Li Qing-Fa,et al."Dark current simulation and verification of In-0.83 Ga-0.17 As detector with superlattice electron barrier".JOURNAL OF INFRARED AND MILLIMETER WAVES 35.6(2016):662-666.