Distinct Electronic Structure for the Extreme Magnetoresistance in YSb

doi:10.1103/PhysRevLett.117.267201

	Distinct Electronic Structure for the Extreme Magnetoresistance in YSb
	He, Junfeng 1,2,3; Zhang, Chaofan 1,2,3; Ghimire, Nirmal J.4; Liang, Tian 1,2,3; Jia, Chunjing 1,2,3; Jiang, Juan5,6,7 ; Tang, Shujie 1,2,3; Chen, Sudi 1,2,3; He, Yu 1,2,3; Mo, S. -K.5; Hwang, C. C.7; Hashimoto, M.8; Lu, D. H.8; Moritz, B.1,2,3; Devereaux, T. P.1,2,3; Chen, Y. L.6,9 ; Mitchell, J. F.4; Shen, Z. -X.1,2,3
	2016-12-23
发表期刊	PHYSICAL REVIEW LETTERS (IF:8.1[JCR-2023],8.3[5-Year])
ISSN	0031-9007
卷号	117 期号:26
发表状态	已发表
DOI	10.1103/PhysRevLett.117.267201
摘要	An extreme magnetoresistance (XMR) has recently been observed in several nonmagnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Here, by investigating the electronic structure of a XMR material, YSb, we present spectroscopic evidence for a special case which lacks topological protection and perfect electron-hole compensation. Further investigations reveal that a cooperative action of a substantial difference between electron and hole mobility and a moderate carrier compensation might contribute to the XMR in YSb.
收录类别	SCI ; EI
语种	英语
资助项目	NRF, Korea through the SRC center for Topological Matter[2011-0030787]
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
WOS记录号	WOS:000390301400008
出版者	AMER PHYSICAL SOC
EI入藏号	20165303197195
EI主题词	Electronic structure ; Magnetoresistance ; Topology
EI分类号	Magnetism: Basic Concepts and Phenomena:701.2 ; Semiconducting Materials:712.1 ; Combinatorial Mathematics, Includes Graph Theory, Set Theory:921.4
WOS关键词	GIANT MAGNETORESISTANCE ; ULTRAHIGH MOBILITY ; SEMIMETAL PHASE ; RESISTIVITY ; DISCOVERY ; SURFACE
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1595
专题	物质科学与技术学院_特聘教授组_陈宇林
通讯作者	Shen, Z. -X.
作者单位	1.SLAC Natl Accelerator Lab, Stanford Inst Mat & Energy Sci, 2575 Sand Hill Rd, Menlo Pk, CA 94025 USA 2.Stanford Univ, Geballe Lab Adv Mat, Dept Phys, Stanford, CA 94305 USA 3.Stanford Univ, Geballe Lab Adv Mat, Dept Appl Phys, Stanford, CA 94305 USA 4.Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA 5.Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA 6.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China 7.Pohang Univ Sci & Technol, Pohang Accelerator Lab, Pohang 790784, South Korea 8.SLAC Natl Accelerator Lab, Stanford Synchrotron Radiat Lightsource, 2575 Sand Hill Rd, Menlo Pk, CA 94025 USA 9.Univ Oxford, Dept Phys, Oxford OX1 3PU, England
推荐引用方式 GB/T 7714	He, Junfeng,Zhang, Chaofan,Ghimire, Nirmal J.,et al. Distinct Electronic Structure for the Extreme Magnetoresistance in YSb[J]. PHYSICAL REVIEW LETTERS,2016,117(26).
APA	He, Junfeng.,Zhang, Chaofan.,Ghimire, Nirmal J..,Liang, Tian.,Jia, Chunjing.,...&Shen, Z. -X..(2016).Distinct Electronic Structure for the Extreme Magnetoresistance in YSb.PHYSICAL REVIEW LETTERS,117(26).
MLA	He, Junfeng,et al."Distinct Electronic Structure for the Extreme Magnetoresistance in YSb".PHYSICAL REVIEW LETTERS 117.26(2016).