Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy

doi:10.1088/1361-6641/32/1/015007

	Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy
	Pan, Wenwu 1,2; Zhang, Liyao 1; Zhu, Liang 2,3; Song, Yuxin 1; Li, Yaoyao 1; Wang, Chang4 ; Wang, Peng 1,2; Wu, Xiaoyan 1,2; Zhang, Fan4 ; Shao, Jun 3; Wang, Shumin 1,5
	2017-01
发表期刊	SEMICONDUCTOR SCIENCE AND TECHNOLOGY (IF:1.9[JCR-2023],1.9[5-Year])
ISSN	0268-1242
卷号	32 期号:1
发表状态	已发表
DOI	10.1088/1361-6641/32/1/015007
摘要	InxGa(1-x)As/GaAs1-yBiy/InxGa1-xAs (0.20 <= x <= 0.22, 0.035 <= y <= 0.045) quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type-II band edge line-up. Both type- I and type-II transitions were observed in the Bi containing W QWs and the photoluminescence intensity was enhanced in the sample with a high Bi content, which is mainly due to the improvement of carrier confinement. The 8 band k . p model was used to analyze the electronic properties in the QWs and the calculated transition energies fit well with the experiment results. Our study shows that the proposed type-II QW is a promising candidate for realizing GaAs-based near infrared light emitting devices near 1.3 mu m.
关键词	GaAsBi type-II quantum well molecular beam epitaxy kp method photoluminescence
收录类别	SCI ; EI
语种	英语
资助项目	Creative Research Group Project of Natural Science Foundation of China[61321492]
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter
WOS记录号	WOS:000391486500003
出版者	IOP PUBLISHING LTD
EI入藏号	20165203195085
EI主题词	Electronic properties ; Epitaxial growth ; Gallium ; Gallium alloys ; Gallium arsenide ; Infrared devices ; Light emission ; Molecular beam epitaxy ; Molecular beams ; Photoluminescence ; Semiconducting gallium ; Semiconductor quantum wells
EI分类号	Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Single Element Semiconducting Materials:712.1.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Chemical Operations:802.3 ; Chemical Products Generally:804 ; Atomic and Molecular Physics:931.3
WOS关键词	BAND-GAP ; GAAS1-XBIX ; BISMUTH
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1582
专题	物质科学与技术学院物质科学与技术学院_硕士生
通讯作者	Zhang, Liyao; Wang, Shumin
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Chinese Acad Sci, Beijing 100190, Peoples R China 3.Chinese Acad Sci, Natl Lab Infrared Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China 4.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 5.Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
推荐引用方式 GB/T 7714	Pan, Wenwu,Zhang, Liyao,Zhu, Liang,et al. Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2017,32(1).
APA	Pan, Wenwu.,Zhang, Liyao.,Zhu, Liang.,Song, Yuxin.,Li, Yaoyao.,...&Wang, Shumin.(2017).Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,32(1).
MLA	Pan, Wenwu,et al."Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 32.1(2017).