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High-performance ReS2 photodetectors enhanced by a ferroelectric field and strain field
2022-02-09
发表期刊RSC ADVANCES (IF:3.9[JCR-2023],3.9[5-Year])
EISSN2046-2069
卷号12期号:8
发表状态已发表
DOI10.1039/d1ra08718e
摘要Flexible optoelectronic devices have numerous applications in personal wearable devices, bionic detectors, and other systems. There is an urgent need for functional materials with appealing electrical and optoelectronic properties, stretchable electrodes with outstanding mechanical flexibility, and gate medium with flexibility and low power consumption. Two-dimensional transition metal dichalcogenides (TMDCs), a novel kind of widely studied optoelectrical material, have good flexibility for their ultrathin nature. P(VDF-TrFE) is a kind of organic material with good flexibility which has been proved to be a well-performing ferroelectric gate material for photodetectors. Herein, we directly fabricated a well-performing photodetector based on ReS2 and P(VDF-TrFE) on a flexible substrate. The device achieved a high responsivity of 11.3 A W-1 and a high detectivity of 1.7 x 10(10) Jones from visible to near-infrared. Moreover, with strain modulation, the device's responsivity improved 2.6 times, while the detectivity improved 1.8 times. This research provides a prospect of flexible photodetectors in the near-infrared wavelength.
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收录类别SCI ; EI ; SCIE
语种英语
资助项目Natural Science Foundation of China[62025405,61905267,61835012,62075228,61974153,62004204] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB44000000] ; Key Research Project of Frontier Sciences of Chinese Academy of Sciences[QYZDY-SSW-JSC042] ; Key Research Program of Frontier Sciences, CAS[ZDBS-LY-JSC045] ; Shanghai Sailing Program["19YF1454900","21YF1454800"] ; China Postdoctoral Science Foundation["2019M661431","2020M671245"] ; Russian Foundation for Basic Researches (RFBR)["19-01-00519","20-51-53014",62011530043]
WOS研究方向Chemistry
WOS类目Chemistry, Multidisciplinary
WOS记录号WOS:000753035200001
出版者ROYAL SOC CHEMISTRY
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文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/155854
专题物质科学与技术学院_硕士生
物质科学与技术学院_特聘教授组_褚君浩组
通讯作者Chen, Yan; Lin, Tie; Shen, Hong
作者单位
1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, 500 Yu Tian Rd, Shanghai 200083, Peoples R China
2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
3.East China Normal Univ, Sch Phys & Elect Sci, Dept Mat, Shanghai 200241, Peoples R China
第一作者单位物质科学与技术学院
推荐引用方式
GB/T 7714
Tai, Xiaochi,Chen, Yan,Wu, Shuaiqin,et al. High-performance ReS2 photodetectors enhanced by a ferroelectric field and strain field[J]. RSC ADVANCES,2022,12(8).
APA Tai, Xiaochi.,Chen, Yan.,Wu, Shuaiqin.,Jiao, Hanxue.,Cui, Zhuangzhuang.,...&Chu, Junhao.(2022).High-performance ReS2 photodetectors enhanced by a ferroelectric field and strain field.RSC ADVANCES,12(8).
MLA Tai, Xiaochi,et al."High-performance ReS2 photodetectors enhanced by a ferroelectric field and strain field".RSC ADVANCES 12.8(2022).
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