Tailoring femtosecond 1.5-mu m Bessel beams for manufacturing high-aspect-ratio through-silicon vias
He, Fei1,2; Yu, Junjie3; Tan, Yuanxin2,4; Chu, Wei2; Zhou, Changhe3; Cheng, Ya2; Sugioka, Koji1
2017-01-18
Source PublicationSCIENTIFIC REPORTS
ISSN2045-2322
Volume7
Status已发表
DOI10.1038/srep40785
AbstractThree-dimensional integrated circuits (3D ICs) are an attractive replacement for conventional 2D ICs as high-performance, low-power-consumption, and small-footprint microelectronic devices. However, one of the major remaining challenges is the manufacture of high-aspect-ratio through-silicon vias (TSVs), which is a crucial technology for the assembly of 3D Si ICs. Here, we present the fabrication of high-quality TSVs using a femtosecond (fs) 1.5-mu m Bessel beam. To eliminate the severe ablation caused by the sidelobes of a conventional Bessel beam, a fs Bessel beam is tailored using a specially designed binary phase plate. We demonstrate that the tailored fs Bessel beam can be used to fabricate a 2D array of approximately circle divide 10-mu m TSVs on a 100-mu m-thick Si substrate without any sidelobe damage, suggesting potential application in the 3D assembly of 3D Si ICs.
Indexed BySCI
Language英语
Funding ProjectNational Basic Research Program of China[2014CB921300]
WOS Research AreaScience & Technology - Other Topics
WOS SubjectMultidisciplinary Sciences
WOS IDWOS:000392185300001
PublisherNATURE PUBLISHING GROUP
WOS KeywordLASER-PULSES ; TRANSPARENT MATERIALS ; WAVE-GUIDES ; SUPERRESOLUTION ; FABRICATION ; GENERATION ; SUBSTRATE ; ABLATION ; AXICON ; ARRAYS
Original Document TypeArticle
Citation statistics
Cited Times:39[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttps://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1539
Collection物质科学与技术学院
物质科学与技术学院_特聘教授组_程亚组
物质科学与技术学院_硕士生
Corresponding AuthorCheng, Ya; Sugioka, Koji
Affiliation1.RIKEN, Ctr Adv Photon, Hirosawa 2-1, Wako, Saitama 3510198, Japan
2.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, State Key Lab High Field Laser Phys, POB 800-211, Shanghai 201800, Peoples R China
3.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Lab Informat Opt & Optoelect Technol, POB 800-211, Shanghai 201800, Peoples R China
4.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
Recommended Citation
GB/T 7714
He, Fei,Yu, Junjie,Tan, Yuanxin,et al. Tailoring femtosecond 1.5-mu m Bessel beams for manufacturing high-aspect-ratio through-silicon vias[J]. SCIENTIFIC REPORTS,2017,7.
APA He, Fei.,Yu, Junjie.,Tan, Yuanxin.,Chu, Wei.,Zhou, Changhe.,...&Sugioka, Koji.(2017).Tailoring femtosecond 1.5-mu m Bessel beams for manufacturing high-aspect-ratio through-silicon vias.SCIENTIFIC REPORTS,7.
MLA He, Fei,et al."Tailoring femtosecond 1.5-mu m Bessel beams for manufacturing high-aspect-ratio through-silicon vias".SCIENTIFIC REPORTS 7(2017).
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