Tailoring femtosecond 1.5-mu m Bessel beams for manufacturing high-aspect-ratio through-silicon vias

doi:10.1038/srep40785

	Tailoring femtosecond 1.5-mu m Bessel beams for manufacturing high-aspect-ratio through-silicon vias
	He, Fei 1,2; Yu, Junjie 3; Tan, Yuanxin2,4 ; Chu, Wei 2; Zhou, Changhe 3; Cheng, Ya2 ; Sugioka, Koji 1
	2017-01-18
发表期刊	SCIENTIFIC REPORTS
ISSN	2045-2322
卷号	7
发表状态	已发表
DOI	10.1038/srep40785
摘要	Three-dimensional integrated circuits (3D ICs) are an attractive replacement for conventional 2D ICs as high-performance, low-power-consumption, and small-footprint microelectronic devices. However, one of the major remaining challenges is the manufacture of high-aspect-ratio through-silicon vias (TSVs), which is a crucial technology for the assembly of 3D Si ICs. Here, we present the fabrication of high-quality TSVs using a femtosecond (fs) 1.5-mu m Bessel beam. To eliminate the severe ablation caused by the sidelobes of a conventional Bessel beam, a fs Bessel beam is tailored using a specially designed binary phase plate. We demonstrate that the tailored fs Bessel beam can be used to fabricate a 2D array of approximately circle divide 10-mu m TSVs on a 100-mu m-thick Si substrate without any sidelobe damage, suggesting potential application in the 3D assembly of 3D Si ICs.
收录类别	SCI
语种	英语
资助项目	National Basic Research Program of China[2014CB921300]
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:000392185300001
出版者	NATURE PUBLISHING GROUP
WOS关键词	LASER-PULSES ; TRANSPARENT MATERIALS ; WAVE-GUIDES ; SUPERRESOLUTION ; FABRICATION ; GENERATION ; SUBSTRATE ; ABLATION ; AXICON ; ARRAYS
原始文献类型	Article
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1539
专题	物质科学与技术学院物质科学与技术学院_特聘教授组_程亚组物质科学与技术学院_硕士生
通讯作者	Cheng, Ya; Sugioka, Koji
作者单位	1.RIKEN, Ctr Adv Photon, Hirosawa 2-1, Wako, Saitama 3510198, Japan 2.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, State Key Lab High Field Laser Phys, POB 800-211, Shanghai 201800, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Lab Informat Opt & Optoelect Technol, POB 800-211, Shanghai 201800, Peoples R China 4.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
推荐引用方式 GB/T 7714	He, Fei,Yu, Junjie,Tan, Yuanxin,et al. Tailoring femtosecond 1.5-mu m Bessel beams for manufacturing high-aspect-ratio through-silicon vias[J]. SCIENTIFIC REPORTS,2017,7.
APA	He, Fei.,Yu, Junjie.,Tan, Yuanxin.,Chu, Wei.,Zhou, Changhe.,...&Sugioka, Koji.(2017).Tailoring femtosecond 1.5-mu m Bessel beams for manufacturing high-aspect-ratio through-silicon vias.SCIENTIFIC REPORTS,7.
MLA	He, Fei,et al."Tailoring femtosecond 1.5-mu m Bessel beams for manufacturing high-aspect-ratio through-silicon vias".SCIENTIFIC REPORTS 7(2017).