Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric

doi:10.1103/PhysRevB.95.020503

	Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric
	Lei, B.1,2,3; Wang, N. Z.1,2,3; Shang, C.1,2,3; Meng, F. B.1,2,3; Ma, L. K.1,2,3; Luo, X. G.1,2,3,4; Wu, T.1,2,3,4; Sun, Z.4,5; Wang, Y.6; Jiang, Z.6; Mao, B. H.7; Liu, Z.7,8 ; Yu, Y. J.9,10; Zhang, Y. B.4,9,10; Chen, X. H.1,2,3,4,11
	2017-01-30
发表期刊	PHYSICAL REVIEW B
ISSN	2469-9950
卷号	95 期号:2
发表状态	已发表
DOI	10.1103/PhysRevB.95.020503
摘要	We have developed a field-effect transistor (FET) device using a solid ion conductor (SIC) as the gate dielectric, which can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes and consequently control the physical properties and phase transitions. A dome-shaped superconducting phase diagram was mapped out with increasing Li content, with T-c similar to 46.6 K for optimal doping, and an insulating phase was reached at the extremely overdoped regime. Our study suggests that, by using a solid ion conductor as the gate dielectric, the SIC-FET device is able to induce much higher carrier doping in the bulk, suit many surface-sensitive experimental probes, and stabilize structural phases that are inaccessible in ordinary conditions.
收录类别	SCI ; EI
语种	英语
资助项目	Hefei Science Center CAS[2016HSC-IU001]
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000400593700001
出版者	AMER PHYSICAL SOC
EI入藏号	20191906872216
EI主题词	Gate dielectrics ; Ions ; Iron compounds ; Phase diagrams ; Power field effect transistors
EI分类号	Semiconductor Devices and Integrated Circuits:714.2
WOS关键词	SINGLE-LAYER FESE ; HIGH-TEMPERATURE SUPERCONDUCTIVITY ; INSULATOR-TRANSITION ; ELECTRONIC ORIGIN ; GROUND-STATE ; FILMS ; METAL ; MOS2
原始文献类型	Article
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1527
专题	大科学中心_PI研究组_刘志组物质科学与技术学院
通讯作者	Zhang, Y. B.
作者单位	1.Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China 2.Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China 3.Univ Sci & Technol China, CAS Key Lab Strongly Coupled Quantum Matter Phys, Hefei 230026, Anhui, Peoples R China 4.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China 5.Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China 6.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China 7.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 8.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China 9.Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China 10.Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China 11.Chinese Acad Sci, High Field Magnet Lab, Hefei 230031, Anhui, Peoples R China
推荐引用方式 GB/T 7714	Lei, B.,Wang, N. Z.,Shang, C.,et al. Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric[J]. PHYSICAL REVIEW B,2017,95(2).
APA	Lei, B..,Wang, N. Z..,Shang, C..,Meng, F. B..,Ma, L. K..,...&Chen, X. H..(2017).Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric.PHYSICAL REVIEW B,95(2).
MLA	Lei, B.,et al."Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric".PHYSICAL REVIEW B 95.2(2017).