Role of the carrier gas flow rate in monolayer MoS2 growth by modified chemical vapor deposition
2017-02
发表期刊NANO RESEARCH (IF:9.5[JCR-2023],9.0[5-Year])
ISSN1998-0124
卷号10期号:2页码:643-651
发表状态已发表
DOI10.1007/s12274-016-1323-3
摘要Monolayer molybdenum disulfide (MoS2) has attracted much attention because of the variety of potential applications. However, its controlled growth is still a great challenge. Here, we report a modified chemical vapor deposition method to grow monolayer MoS2. We observed that the quality of the MoS2 crystals could be greatly improved by tuning the carrier gas flow rate during the heating stage. This subtle modification prevents the uncontrollable reaction between the precursors, a critical factor for the growth of high-quality monolayer MoS2. Based on an optimized gas flow rate, the MoS2 coverage and flake size can be controlled by adjusting the growth time.
关键词MoS2 monolayer carrier gas flow rate modified CVD
收录类别SCI ; EI
语种英语
资助项目Chinese Postdoctoral Science Foundation[2016M591460]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号WOS:000394322300024
出版者TSINGHUA UNIV PRESS
EI入藏号20165003108636
EI主题词Chemical vapor deposition ; Deposition ; Flow rate ; Molybdenum compounds ; Monolayers ; Vapor deposition
WOS关键词MONO LAYER MOS2 ; HIGH-QUALITY MONOLAYER ; LARGE-AREA ; ATOMIC LAYERS ; MOLYBDENUM-DISULFIDE ; SINGLE-CRYSTALLINE ; OPTICAL-PROPERTIES ; PHASE GROWTH ; THIN-LAYERS ; AU FOILS
原始文献类型Article
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文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1515
专题物质科学与技术学院
物质科学与技术学院_硕士生
通讯作者Zhu, Yuanhu
作者单位
1.Chinese Acad Sci, Shanghai Adv Res Inst, 99 Hi Tech Pk, Shanghai 200120, Peoples R China
2.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Catalysis, 457 Zhongshan Rd, Dalian 116023, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100039, Peoples R China
4.ShanghaiTech Univ, 100 Haike Rd, Shanghai 201210, Peoples R China
第一作者单位上海科技大学
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GB/T 7714
Liu, Hengchang,Zhu, Yuanhu,Meng, Qinglong,et al. Role of the carrier gas flow rate in monolayer MoS2 growth by modified chemical vapor deposition[J]. NANO RESEARCH,2017,10(2):643-651.
APA Liu, Hengchang.,Zhu, Yuanhu.,Meng, Qinglong.,Lu, Xiaowei.,Kong, Shuang.,...&Bao, Xinhe.(2017).Role of the carrier gas flow rate in monolayer MoS2 growth by modified chemical vapor deposition.NANO RESEARCH,10(2),643-651.
MLA Liu, Hengchang,et al."Role of the carrier gas flow rate in monolayer MoS2 growth by modified chemical vapor deposition".NANO RESEARCH 10.2(2017):643-651.
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