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Role of the carrier gas flow rate in monolayer MoS2 growth by modified chemical vapor deposition | |
2017-02 | |
发表期刊 | NANO RESEARCH (IF:9.5[JCR-2023],9.0[5-Year]) |
ISSN | 1998-0124 |
卷号 | 10期号:2页码:643-651 |
发表状态 | 已发表 |
DOI | 10.1007/s12274-016-1323-3 |
摘要 | Monolayer molybdenum disulfide (MoS2) has attracted much attention because of the variety of potential applications. However, its controlled growth is still a great challenge. Here, we report a modified chemical vapor deposition method to grow monolayer MoS2. We observed that the quality of the MoS2 crystals could be greatly improved by tuning the carrier gas flow rate during the heating stage. This subtle modification prevents the uncontrollable reaction between the precursors, a critical factor for the growth of high-quality monolayer MoS2. Based on an optimized gas flow rate, the MoS2 coverage and flake size can be controlled by adjusting the growth time. |
关键词 | MoS2 monolayer carrier gas flow rate modified CVD |
收录类别 | SCI ; EI |
语种 | 英语 |
资助项目 | Chinese Postdoctoral Science Foundation[2016M591460] |
WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
WOS类目 | Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
WOS记录号 | WOS:000394322300024 |
出版者 | TSINGHUA UNIV PRESS |
EI入藏号 | 20165003108636 |
EI主题词 | Chemical vapor deposition ; Deposition ; Flow rate ; Molybdenum compounds ; Monolayers ; Vapor deposition |
WOS关键词 | MONO LAYER MOS2 ; HIGH-QUALITY MONOLAYER ; LARGE-AREA ; ATOMIC LAYERS ; MOLYBDENUM-DISULFIDE ; SINGLE-CRYSTALLINE ; OPTICAL-PROPERTIES ; PHASE GROWTH ; THIN-LAYERS ; AU FOILS |
原始文献类型 | Article |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1515 |
专题 | 物质科学与技术学院 物质科学与技术学院_硕士生 |
通讯作者 | Zhu, Yuanhu |
作者单位 | 1.Chinese Acad Sci, Shanghai Adv Res Inst, 99 Hi Tech Pk, Shanghai 200120, Peoples R China 2.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Catalysis, 457 Zhongshan Rd, Dalian 116023, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100039, Peoples R China 4.ShanghaiTech Univ, 100 Haike Rd, Shanghai 201210, Peoples R China |
第一作者单位 | 上海科技大学 |
推荐引用方式 GB/T 7714 | Liu, Hengchang,Zhu, Yuanhu,Meng, Qinglong,et al. Role of the carrier gas flow rate in monolayer MoS2 growth by modified chemical vapor deposition[J]. NANO RESEARCH,2017,10(2):643-651. |
APA | Liu, Hengchang.,Zhu, Yuanhu.,Meng, Qinglong.,Lu, Xiaowei.,Kong, Shuang.,...&Bao, Xinhe.(2017).Role of the carrier gas flow rate in monolayer MoS2 growth by modified chemical vapor deposition.NANO RESEARCH,10(2),643-651. |
MLA | Liu, Hengchang,et al."Role of the carrier gas flow rate in monolayer MoS2 growth by modified chemical vapor deposition".NANO RESEARCH 10.2(2017):643-651. |
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