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| Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector | |
| 2017-04 | |
| Source Publication | OPTICAL AND QUANTUM ELECTRONICS
 |
| ISSN | 0306-8919 |
| Volume | 49Issue:4 |
| Status | 已发表 |
| DOI | 10.1007/s11082-017-0970-2 |
| Abstract | In this paper, the back-illuminated In0.09Ga0.91N p-i-n ultraviolet photodetectors have been fabricated and simulated. The responsivity characteristic was shown experimentally and theoretically. The peak responsivity of photodetector was improved from 0.06 A/W at 394 nm to 0.19 A/W at 402 nm since the growth of a 30 nm i-GaN layer between i-InGaN layer and n-GaN layer. The photodetector models and characteristics were numerical simulated and optimized by Silvaco TCAD semiconductor simulation software. The simulation results revealed that the responsivity has great relationship with the Shockley-Read-Hall recombination lifetime, intrinsic layer thickness and extinction coefficient k. In addition, the simulation results were in good agreement with the experimental results when the SRH recombination lifetime about 0.01-0.1 ns and the In composition x introduced a 0.05 increment of In0.09Ga0.91N layer. |
| Keyword | InGaN p-i-n Ultraviolet photodetector Simulation Responsivity |
| Indexed By | SCI ; EI |
| Language | 英语 |
| Funding Project | National Natural Science Foundation of China[61106097] ; National Natural Science Foundation of China[61204134] ; National Natural Science Foundation of China[11304335] |
| WOS Research Area | Engineering ; Physics ; Optics |
| WOS Subject | Engineering, Electrical & Electronic ; Quantum Science & Technology ; Optics |
| WOS ID | WOS:000400556100011 |
| Publisher | SPRINGER |
| EI Accession Number | 20171103452104 |
| EI Keywords | Computer software ; Gallium nitride ; Indium ; Photodetectors ; Wide band gap semiconductors |
| EI Classification Number | Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Computer Software, Data Handling and Applications:723 ; Atomic and Molecular Physics:931.3 |
| WOS Keyword | QUANTUM-WELL STRUCTURES ; DIODES |
| Original Document Type | Article |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1440 |
| Collection | 信息科学与技术学院 信息科学与技术学院_特聘教授组_李向阳组 信息科学与技术学院_硕士生 |
| Corresponding Author | Huang, Bo |
| Affiliation | 1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Labs Transducer Technol, Shanghai 200083, Peoples R China 2.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China |
| First Author Affilication | School of Information Science and Technology |
| Corresponding Author Affilication | School of Information Science and Technology |
| Recommended Citation GB/T 7714 | Huang, Bo,Xu, Jintong,Wang, Ling,et al. Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector[J]. OPTICAL AND QUANTUM ELECTRONICS,2017,49(4). |
| APA | Huang, Bo,Xu, Jintong,Wang, Ling,Zhang, Yan,&Li, Xiangyang.(2017).Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector.OPTICAL AND QUANTUM ELECTRONICS,49(4). |
| MLA | Huang, Bo,et al."Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector".OPTICAL AND QUANTUM ELECTRONICS 49.4(2017). |
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