Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector
Huang, Bo1,2; Xu, Jintong1; Wang, Ling1; Zhang, Yan1; Li, Xiangyang1,2
AbstractIn this paper, the back-illuminated In0.09Ga0.91N p-i-n ultraviolet photodetectors have been fabricated and simulated. The responsivity characteristic was shown experimentally and theoretically. The peak responsivity of photodetector was improved from 0.06 A/W at 394 nm to 0.19 A/W at 402 nm since the growth of a 30 nm i-GaN layer between i-InGaN layer and n-GaN layer. The photodetector models and characteristics were numerical simulated and optimized by Silvaco TCAD semiconductor simulation software. The simulation results revealed that the responsivity has great relationship with the Shockley-Read-Hall recombination lifetime, intrinsic layer thickness and extinction coefficient k. In addition, the simulation results were in good agreement with the experimental results when the SRH recombination lifetime about 0.01-0.1 ns and the In composition x introduced a 0.05 increment of In0.09Ga0.91N layer.
KeywordInGaN p-i-n Ultraviolet photodetector Simulation Responsivity
Indexed BySCI ; EI
Funding ProjectNational Natural Science Foundation of China[61106097] ; National Natural Science Foundation of China[61204134] ; National Natural Science Foundation of China[11304335]
WOS Research AreaEngineering ; Physics ; Optics
WOS SubjectEngineering, Electrical & Electronic ; Quantum Science & Technology ; Optics
WOS IDWOS:000400556100011
EI Accession Number20171103452104
EI KeywordsComputer software ; Gallium nitride ; Indium ; Photodetectors ; Wide band gap semiconductors
EI Classification NumberNonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Computer Software, Data Handling and Applications:723 ; Atomic and Molecular Physics:931.3
Original Document TypeArticle
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Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Corresponding AuthorHuang, Bo
Affiliation1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Labs Transducer Technol, Shanghai 200083, Peoples R China
2.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China
First Author AffilicationSchool of Information Science and Technology
Corresponding Author AffilicationSchool of Information Science and Technology
Recommended Citation
GB/T 7714
Huang, Bo,Xu, Jintong,Wang, Ling,et al. Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector[J]. OPTICAL AND QUANTUM ELECTRONICS,2017,49(4).
APA Huang, Bo,Xu, Jintong,Wang, Ling,Zhang, Yan,&Li, Xiangyang.(2017).Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector.OPTICAL AND QUANTUM ELECTRONICS,49(4).
MLA Huang, Bo,et al."Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector".OPTICAL AND QUANTUM ELECTRONICS 49.4(2017).
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