Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector
Huang, Bo1,2; Xu, Jintong1; Wang, Ling1; Zhang, Yan1; Li, Xiangyang1,2
2017-04
Source PublicationOPTICAL AND QUANTUM ELECTRONICS
ISSN0306-8919
Volume49Issue:4
Status已发表
DOI10.1007/s11082-017-0970-2
AbstractIn this paper, the back-illuminated In0.09Ga0.91N p-i-n ultraviolet photodetectors have been fabricated and simulated. The responsivity characteristic was shown experimentally and theoretically. The peak responsivity of photodetector was improved from 0.06 A/W at 394 nm to 0.19 A/W at 402 nm since the growth of a 30 nm i-GaN layer between i-InGaN layer and n-GaN layer. The photodetector models and characteristics were numerical simulated and optimized by Silvaco TCAD semiconductor simulation software. The simulation results revealed that the responsivity has great relationship with the Shockley-Read-Hall recombination lifetime, intrinsic layer thickness and extinction coefficient k. In addition, the simulation results were in good agreement with the experimental results when the SRH recombination lifetime about 0.01-0.1 ns and the In composition x introduced a 0.05 increment of In0.09Ga0.91N layer.
KeywordInGaN p-i-n Ultraviolet photodetector Simulation Responsivity
Indexed BySCI ; EI
Language英语
Funding ProjectNational Natural Science Foundation of China[61106097] ; National Natural Science Foundation of China[61204134] ; National Natural Science Foundation of China[11304335]
WOS Research AreaEngineering ; Physics ; Optics
WOS SubjectEngineering, Electrical & Electronic ; Quantum Science & Technology ; Optics
WOS IDWOS:000400556100011
PublisherSPRINGER
EI Accession Number20171103452104
EI KeywordsComputer software ; Gallium nitride ; Indium ; Photodetectors ; Wide band gap semiconductors
EI Classification NumberNonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Computer Software, Data Handling and Applications:723 ; Atomic and Molecular Physics:931.3
WOS KeywordQUANTUM-WELL STRUCTURES ; DIODES
Original Document TypeArticle
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttps://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1440
Collection信息科学与技术学院
信息科学与技术学院_特聘教授组_李向阳组
信息科学与技术学院_硕士生
Corresponding AuthorHuang, Bo
Affiliation1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Labs Transducer Technol, Shanghai 200083, Peoples R China
2.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China
First Author AffilicationSchool of Information Science and Technology
Corresponding Author AffilicationSchool of Information Science and Technology
Recommended Citation
GB/T 7714
Huang, Bo,Xu, Jintong,Wang, Ling,et al. Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector[J]. OPTICAL AND QUANTUM ELECTRONICS,2017,49(4).
APA Huang, Bo,Xu, Jintong,Wang, Ling,Zhang, Yan,&Li, Xiangyang.(2017).Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector.OPTICAL AND QUANTUM ELECTRONICS,49(4).
MLA Huang, Bo,et al."Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector".OPTICAL AND QUANTUM ELECTRONICS 49.4(2017).
Files in This Item: Download All
File Name/Size DocType Version Access License
10.1007@s11082-017-0(987KB)期刊论文出版稿开放获取CC BYView Download
Related Services
Usage statistics
Scholar Google
Similar articles in Scholar Google
[Huang, Bo]'s Articles
[Xu, Jintong]'s Articles
[Wang, Ling]'s Articles
Baidu academic
Similar articles in Baidu academic
[Huang, Bo]'s Articles
[Xu, Jintong]'s Articles
[Wang, Ling]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Huang, Bo]'s Articles
[Xu, Jintong]'s Articles
[Wang, Ling]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: 10.1007@s11082-017-0970-2.pdf
Format: Adobe PDF
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.