Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector

doi:10.1007/s11082-017-0970-2

	Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector
	Huang, Bo1,2 ; Xu, Jintong 1; Wang, Ling 1; Zhang, Yan 1; Li, Xiangyang1,2
	2017-04
发表期刊	OPTICAL AND QUANTUM ELECTRONICS (IF:3.3[JCR-2023],2.7[5-Year])
ISSN	0306-8919
卷号	49 期号:4
发表状态	已发表
DOI	10.1007/s11082-017-0970-2
摘要	In this paper, the back-illuminated In0.09Ga0.91N p-i-n ultraviolet photodetectors have been fabricated and simulated. The responsivity characteristic was shown experimentally and theoretically. The peak responsivity of photodetector was improved from 0.06 A/W at 394 nm to 0.19 A/W at 402 nm since the growth of a 30 nm i-GaN layer between i-InGaN layer and n-GaN layer. The photodetector models and characteristics were numerical simulated and optimized by Silvaco TCAD semiconductor simulation software. The simulation results revealed that the responsivity has great relationship with the Shockley-Read-Hall recombination lifetime, intrinsic layer thickness and extinction coefficient k. In addition, the simulation results were in good agreement with the experimental results when the SRH recombination lifetime about 0.01-0.1 ns and the In composition x introduced a 0.05 increment of In0.09Ga0.91N layer.
关键词	InGaN p-i-n Ultraviolet photodetector Simulation Responsivity
收录类别	SCI ; EI
语种	英语
资助项目	National Natural Science Foundation of China[61106097] ; National Natural Science Foundation of China[61204134] ; National Natural Science Foundation of China[11304335]
WOS研究方向	Engineering ; Physics ; Optics
WOS类目	Engineering, Electrical & Electronic ; Quantum Science & Technology ; Optics
WOS记录号	WOS:000400556100011
出版者	SPRINGER
EI入藏号	20171103452104
EI主题词	Computer software ; Gallium nitride ; Indium ; Photodetectors ; Wide band gap semiconductors
EI分类号	Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Computer Software, Data Handling and Applications:723 ; Atomic and Molecular Physics:931.3
WOS关键词	QUANTUM-WELL STRUCTURES ; DIODES
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1440
专题	信息科学与技术学院信息科学与技术学院_特聘教授组_李向阳组信息科学与技术学院_硕士生
通讯作者	Huang, Bo
作者单位	1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Labs Transducer Technol, Shanghai 200083, Peoples R China 2.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China
第一作者单位	信息科学与技术学院
通讯作者单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Huang, Bo,Xu, Jintong,Wang, Ling,et al. Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector[J]. OPTICAL AND QUANTUM ELECTRONICS,2017,49(4).
APA	Huang, Bo,Xu, Jintong,Wang, Ling,Zhang, Yan,&Li, Xiangyang.(2017).Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector.OPTICAL AND QUANTUM ELECTRONICS,49(4).
MLA	Huang, Bo,et al."Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector".OPTICAL AND QUANTUM ELECTRONICS 49.4(2017).