Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector
Huang, Bo1,2; Xu, Jintong1; Wang, Ling1; Zhang, Yan1; Li, Xiangyang1,2
2017-04
发表期刊OPTICAL AND QUANTUM ELECTRONICS
ISSN0306-8919
卷号49期号:4
发表状态已发表
DOI10.1007/s11082-017-0970-2
摘要In this paper, the back-illuminated In0.09Ga0.91N p-i-n ultraviolet photodetectors have been fabricated and simulated. The responsivity characteristic was shown experimentally and theoretically. The peak responsivity of photodetector was improved from 0.06 A/W at 394 nm to 0.19 A/W at 402 nm since the growth of a 30 nm i-GaN layer between i-InGaN layer and n-GaN layer. The photodetector models and characteristics were numerical simulated and optimized by Silvaco TCAD semiconductor simulation software. The simulation results revealed that the responsivity has great relationship with the Shockley-Read-Hall recombination lifetime, intrinsic layer thickness and extinction coefficient k. In addition, the simulation results were in good agreement with the experimental results when the SRH recombination lifetime about 0.01-0.1 ns and the In composition x introduced a 0.05 increment of In0.09Ga0.91N layer.
关键词InGaN p-i-n Ultraviolet photodetector Simulation Responsivity
收录类别SCI ; EI
语种英语
资助项目National Natural Science Foundation of China[61106097] ; National Natural Science Foundation of China[61204134] ; National Natural Science Foundation of China[11304335]
WOS研究方向Engineering ; Physics ; Optics
WOS类目Engineering, Electrical & Electronic ; Quantum Science & Technology ; Optics
WOS记录号WOS:000400556100011
出版者SPRINGER
EI入藏号20171103452104
EI主题词Computer software ; Gallium nitride ; Indium ; Photodetectors ; Wide band gap semiconductors
EI分类号Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Computer Software, Data Handling and Applications:723 ; Atomic and Molecular Physics:931.3
WOS关键词QUANTUM-WELL STRUCTURES ; DIODES
原始文献类型Article
引用统计
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1440
专题信息科学与技术学院
信息科学与技术学院_特聘教授组_李向阳组
信息科学与技术学院_硕士生
通讯作者Huang, Bo
作者单位1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Labs Transducer Technol, Shanghai 200083, Peoples R China
2.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China
第一作者单位信息科学与技术学院
通讯作者单位信息科学与技术学院
推荐引用方式
GB/T 7714
Huang, Bo,Xu, Jintong,Wang, Ling,et al. Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector[J]. OPTICAL AND QUANTUM ELECTRONICS,2017,49(4).
APA Huang, Bo,Xu, Jintong,Wang, Ling,Zhang, Yan,&Li, Xiangyang.(2017).Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector.OPTICAL AND QUANTUM ELECTRONICS,49(4).
MLA Huang, Bo,et al."Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector".OPTICAL AND QUANTUM ELECTRONICS 49.4(2017).
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