Structural properties of GeSn thin films grown by molecular beam epitaxy

doi:10.1063/1.4982245

	Structural properties of GeSn thin films grown by molecular beam epitaxy
	Zhang, Z. P.1,2 ; Song, Y. X.1; Zhu, Z. Y. S.1,2 ; Han, Y.1,3; Chen, Q. M.1,3; Li, Y. Y.1; Zhang, L. Y.1; Wang, S. M.1,2,4
	2017-04
发表期刊	AIP ADVANCES (IF:1.4[JCR-2023],1.4[5-Year])
ISSN	2158-3226
卷号	7 期号:4
发表状态	已发表
DOI	10.1063/1.4982245
摘要	GeSn thin films on Ge (001) with various Sn concentrations from 3.36 to 7.62% were grown by molecular beam epitaxy and characterized. The structural properties were analyzed by reciprocal space mapping in the symmetric (004) and asymmetric (224) planes by high resolution X-ray diffraction (XRD). The lateral correlation length (LCL) and the mosaic spread (MS) were extracted for the epi-layer peaks in the asymmetric (224) diffraction. With the increase of Sn concentration, the LCL reduces while theMSincreases, indicating degrading crystalline quality. Dislocations were observed in the sample with 7.62% Sn concentration by transmission electron microscope, consistent with the strain relaxation found in XRD mapping. Besides, the surface morphologies were investigated. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
收录类别	SCI ; EI
语种	英语
资助项目	Creative Research Group Project of Natural Science Foundation of China[61321492]
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000400396100055
出版者	AMER INST PHYSICS
EI入藏号	20171703603731
EI主题词	Epitaxial growth ; Germanium ; Mapping ; Molecular beam epitaxy ; Molecular beams ; Thin films ; Tin ; Transmission electron microscopy ; X ray diffraction
EI分类号	Surveying:405.3 ; Structural Design:408 ; Tin and Alloys:546.2 ; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Chemical Operations:802.3 ; Atomic and Molecular Physics:931.3 ; Materials Science:951
WOS关键词	SILICON PHOTONICS ; ALLOYS ; SI ; SN
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1428
专题	物质科学与技术学院信息科学与技术学院_特聘教授组_王庶民组物质科学与技术学院_硕士生物质科学与技术学院_博士生
通讯作者	Song, Y. X.; Wang, S. M.
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100190, Peoples R China 4.Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Zhang, Z. P.,Song, Y. X.,Zhu, Z. Y. S.,et al. Structural properties of GeSn thin films grown by molecular beam epitaxy[J]. AIP ADVANCES,2017,7(4).
APA	Zhang, Z. P..,Song, Y. X..,Zhu, Z. Y. S..,Han, Y..,Chen, Q. M..,...&Wang, S. M..(2017).Structural properties of GeSn thin films grown by molecular beam epitaxy.AIP ADVANCES,7(4).
MLA	Zhang, Z. P.,et al."Structural properties of GeSn thin films grown by molecular beam epitaxy".AIP ADVANCES 7.4(2017).