Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride

doi:10.1021/acsami.7b10948

	Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride
	Jiang, Lanlan 1; Shi, Yuanyuan 1,2; Hui, Fei 1,4; Tang, Kechao 3; Wu, Qian 1; Pan, Chengbin 1; Jing, Xu 1,5,6; Uppal, Hasan 7; Palumbo, Felix 8; Lu, Guangyuan 9; Wu, Tianru 9; Wang, Haomin 9; Villena, Marco A.1; Xie, Xiaoming9,10 ; McIntyre, Paul C.3; Lanza, Mario 1
	2017-11-15
发表期刊	ACS APPLIED MATERIALS & INTERFACES
ISSN	1944-8244
卷号	9 期号:45 页码:39758-39770
发表状态	已发表
DOI	10.1021/acsami.7b10948
摘要	Insulating films are essential in multiple electronic devices because they can provide essential functionalities, such as capacitance effects and electrical fields. Two-dimensional (2D) layered materials have superb electronic, physical, chemical, thermal, and optical properties, and they can be effectively used to provide additional performances, such as flexibility and transparency. 2D layered insulators are called to be essential in future electronic devices, but their reliability, degradation kinetics, and dielectric breakdown (BD) process are still not understood. In this work, the dielectric breakdown process of multilayer hexagonal 0 boron nitride (h-BN) is analyzed on the nanoscale and on the device level, and the experimental results are studied via theoretical models. It is found that under electrical stress, local charge accumulation and charge trapping/detrapping are the onset mechanisms for dielectric BD formation. By means of conductive atomic force microscopy, the BD event was triggered at several locations on the surface of different dielectrics (SiO2, HfO2, Al2O3, multilayer h-BN, and monolayer h-BN); BD-induced hillocks rapidly appeared on the surface of all of them when the BD was reached, except in monolayer h-BN. The high thermal conductivity of h-BN combined with the one-atom-thick nature are genuine factors contributing to heat dissipation at the BD spot, which avoids self-accelerated and thermally driven catastrophic BD. These results point to monolayer h-BN as a sublime dielectric in terms of reliability, which may have important implications in future digital electronic devices.
关键词	dielectric breakdown 2D materials insulator hexagonal boron nitride CAFM
收录类别	SCI ; EI
语种	英语
资助项目	National Technological University (UTN.BA)[PIDUTN2014/UTI2423]
WOS研究方向	Science & Technology - Other Topics ; Materials Science
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:000416203800069
出版者	AMER CHEMICAL SOC
EI入藏号	20174704449014
EI主题词	Atomic force microscopy ; Boron nitride ; Degradation ; Dielectric materials ; Digital devices ; Electric breakdown ; Electron devices ; Electronic equipment ; Hafnium oxides ; Monolayers ; Multilayers ; Nitrides ; Optical properties ; Silica ; Thermal conductivity ; Thermoelectric equipment
EI分类号	Thermoelectric Energy:615.4 ; Thermodynamics:641.1 ; Electricity: Basic Concepts and Phenomena:701.1 ; Dielectric Materials:708.1 ; Light/Optics:741.1 ; Optical Devices and Systems:741.3 ; Chemical Reactions:802.2 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2
WOS关键词	SUPERIOR THERMAL-CONDUCTIVITY ; TEMPERATURE-DEPENDENT RAMAN ; FIELD-EFFECT TRANSISTORS ; DEGRADATION ; NANOSCALE ; FILMS ; SIO2 ; GROWTH
原始文献类型	Article
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/14287
专题	物质科学与技术学院_特聘教授组_谢晓明组
通讯作者	Lanza, Mario
作者单位	1.Soochow Univ, Inst Funct Nano & Soft Mat, Collaborat Innovat Ctr Suzhou Nanosci & Technol, 199 Ren Ai Rd, Suzhou 215123, Peoples R China 2.Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA 3.Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA 4.MIT, Dept Elect Engn & Comp Sci, 77 Massachusetts Ave, Cambridge, MA 02139 USA 5.Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA 6.Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78758 USA 7.Univ Manchester, Microelect & Nanostruct, Sackville St, Manchester M13 9PL, Lancs, England 8.UTN CNEA, Natl Sci & Tech Res Council CONICET, Godoy Cruz 2290, Buenos Aires, DF, Argentina 9.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China 10.ShanghaiTech Univ, Sch Phys Sci & Technol, 319 Yueyang Rd, Shanghai 201210, Peoples R China
推荐引用方式 GB/T 7714	Jiang, Lanlan,Shi, Yuanyuan,Hui, Fei,et al. Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride[J]. ACS APPLIED MATERIALS & INTERFACES,2017,9(45):39758-39770.
APA	Jiang, Lanlan.,Shi, Yuanyuan.,Hui, Fei.,Tang, Kechao.,Wu, Qian.,...&Lanza, Mario.(2017).Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride.ACS APPLIED MATERIALS & INTERFACES,9(45),39758-39770.
MLA	Jiang, Lanlan,et al."Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride".ACS APPLIED MATERIALS & INTERFACES 9.45(2017):39758-39770.