Selective Conversion from p-Type to n-Type of Printed Bottom-Gate Carbon Nanotube Thin-Film Transistors and Application in Complementary Metal-Oxide-Semiconductor Inverters

doi:10.1021/acsami.7b01666

	Selective Conversion from p-Type to n-Type of Printed Bottom-Gate Carbon Nanotube Thin-Film Transistors and Application in Complementary Metal-Oxide-Semiconductor Inverters
	Xu, Qiqi1,2,3 ; Zhao, Jianwen 1; Pecunia, Vincenzo 4; Xu, Wenya 1; Zhou, Chunshan 1; Dou, Junyan 1; Gu, Weibing 1; Lin, Jian 1; Mo, Lixin 5; Zhao, Yanfei 6; Cui, Zheng1
	2017-04-12
发表期刊	ACS APPLIED MATERIALS & INTERFACES (IF:8.3[JCR-2023],8.7[5-Year])
ISSN	1944-8244
卷号	9 期号:14 页码:12750-12758
发表状态	已发表
DOI	10.1021/acsami.7b01666
摘要	The fabrication of printed high-performance and environmentally stable n-type single-walled carbon nanotube (SWCNT) transistors and their integration into complementary (i.e., complementary metal-oxide-semiconductor, CMOS) circuits are widely recognized as key to achieving the full potential of carbon nanotube electronics. Here, we report a simple, efficient, and robust method to convert the polarity of SWCNT thin-film transistors (TFTs) using cheap and readily available ethanolamine as an electron doping agent. Printed p-type bottom-gate SWCNT TFTs can be selectively converted into n-type by deposition of ethanolamine inks on the transistor active region via aerosol. jet printing. Resulted n-type TFTs show excellent electrical properties with an on/off ratio of 106, effective mobility up to 30 cm(2)V(-1) s(-1) small hysteresis, and small subthreshold swing (90-140 mV dec(-1)), which are superior compared to the original p-type SWCNT devices. The n-type SWCNT TFTs also show good stability in air, and any deterioration of performance due to shelf storage can be fully recovered by a short low-temperature annealing. The easy polarity conversion process allows construction of CMOS circuitry. As an example, CMOS inverters were fabricated using printed p-type and n-type TFTs and exhibited a large noise margin (50 and 103% of 1/2 V-dd = 1 v) and a voltage gain as high as 30 (at V-dd = 1 V). Additionally, the CMOS inverters show full rail-to-rail output voltage swing and low power dissipation (0.1 mu W at V-dd = 1 V). The new method paves the way to construct fully functional complex CMOS circuitry by printed TFTs.
关键词	printed thin film transistors n-type and p-type ethanolamine sorted semiconducting carbon nanotube selective polarity conversion printed CMOS inverters
收录类别	SCI ; EI
语种	英语
资助项目	Basic Research Programme of Suzhou Institute of Nano-Tech and Nano-Bionics[Y5AAY21001]
WOS研究方向	Science & Technology - Other Topics ; Materials Science
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:000399354100068
出版者	AMER CHEMICAL SOC
EI入藏号	20171603576665
EI主题词	Carbon nanotubes ; CMOS integrated circuits ; Dielectric devices ; Ethanolamines ; Fighter aircraft ; Ink jet printing ; Metallic compounds ; Metals ; MOS devices ; Nanotubes ; Oxide semiconductors ; Semiconductor doping ; Single-walled carbon nanotubes (SWCN) ; Temperature ; Thin film circuits ; Thin films ; Transistors ; Yarn
EI分类号	Thermodynamics:641.1 ; Military Aircraft:652.1.2 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Printing:745.1 ; Nanotechnology:761 ; Organic Compounds:804.1 ; Fiber Products:819.4
WOS关键词	FIELD-EFFECT TRANSISTORS ; ACTIVE-MATRIX BACKPLANES ; CMOS LOGIC-CIRCUITS ; HIGH-PERFORMANCE ; LOW-VOLTAGE ; TRANSPARENT ELECTRONICS ; INTEGRATED-CIRCUITS ; THRESHOLD VOLTAGE ; RING OSCILLATORS ; SILICON FILMS
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1414
专题	物质科学与技术学院物质科学与技术学院_特聘教授组_崔铮组物质科学与技术学院_硕士生
通讯作者	Zhao, Jianwen; Cui, Zheng
作者单位	1.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Printable Elect Res Ctr, SEID, 398 Ruoshui Rd,Suzhou Ind Pk, Suzhou 215123, Jiangsu, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Organ Chem, Shanghai 200032, Peoples R China 3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 4.Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, 199 Renai Rd, Suzhou 215123, Jiangsu, Peoples R China 5.Beijing Inst Graph Commun, Beijing Engn Res Ctr Printed Elect, 1 Xinghua St, Beijing 102600, Peoples R China 6.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Vacuum Interconnected Nanotech Workstn, SEID, 398 Ruoshui Rd,Suzhou Ind Pk, Suzhou 215123, Jiangsu, Peoples R China
第一作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Xu, Qiqi,Zhao, Jianwen,Pecunia, Vincenzo,et al. Selective Conversion from p-Type to n-Type of Printed Bottom-Gate Carbon Nanotube Thin-Film Transistors and Application in Complementary Metal-Oxide-Semiconductor Inverters[J]. ACS APPLIED MATERIALS & INTERFACES,2017,9(14):12750-12758.
APA	Xu, Qiqi.,Zhao, Jianwen.,Pecunia, Vincenzo.,Xu, Wenya.,Zhou, Chunshan.,...&Cui, Zheng.(2017).Selective Conversion from p-Type to n-Type of Printed Bottom-Gate Carbon Nanotube Thin-Film Transistors and Application in Complementary Metal-Oxide-Semiconductor Inverters.ACS APPLIED MATERIALS & INTERFACES,9(14),12750-12758.
MLA	Xu, Qiqi,et al."Selective Conversion from p-Type to n-Type of Printed Bottom-Gate Carbon Nanotube Thin-Film Transistors and Application in Complementary Metal-Oxide-Semiconductor Inverters".ACS APPLIED MATERIALS & INTERFACES 9.14(2017):12750-12758.