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| Electronic band structure of epitaxial PbTe (111) thin films observed by angle-resolved photoemission spectroscopy | |
| 2017-04-24 | |
| Source Publication | PHYSICAL REVIEW B
 |
| ISSN | 2469-9950 |
| Volume | 95Issue:16 |
| Status | 已发表 |
| DOI | 10.1103/PhysRevB.95.165203 |
| Abstract | Using angle-resolved photoemission spectroscopy (ARPES), we studied bulk and surface electronic band structures of narrow-gap semiconductor lead telluride (PbTe) thin films grown by molecular beam epitaxy both perpendicular and parallel to the Gamma-L direction. The comparison of ARPES data with the first-principles calculation reveals the details of band structures, orbital characters, spin-orbit splitting energies, and surface states. The photon-energy-dependent spectra show the bulk character. Both the L and Sigma valence bands are observed and their energy difference is determined. The spin-orbit splitting energies at L and Gamma points are 0.62 eV and 0.88 eV, respectively. The surface states below and close to the valence band maximum are identified. The valence bands are composed of a mixture of Pb 6s and Te 5 p(z) orbitals with dominant in-plane even parity, which is attributed to the layered distortion in the vicinity of the PbTe (111) surface. These findings provide insights into PbTe fundamental properties and shall benefit relevant thermoelectric and optoelectronic applications. |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National RAMP;D Program of the MOST, China[2016YFA0300203] |
| WOS Research Area | Materials Science ; Physics |
| WOS Subject | Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| WOS ID | WOS:000400066400010 |
| Publisher | AMER PHYSICAL SOC |
| WOS Keyword | TOPOLOGICAL CRYSTALLINE INSULATOR ; PERFORMANCE BULK THERMOELECTRICS ; LEAD-CHALCOGENIDES ; SNTE ; PBSE ; PSEUDOPOTENTIALS ; LASERS ; GETE ; SNSE |
| Original Document Type | Article |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1405 |
| Collection | 物质科学与技术学院_PI研究组_柳仲楷组 |
| Corresponding Author | Wu, Huizhen |
| Affiliation | 1.Zhejiang Univ, State Key Lab Silicon Mat, Dept Phys, Hangzhou 310027, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201203, Peoples R China 3.CAS Shanghai Sci Res Ctr, Shanghai 201203, Peoples R China 4.Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China 5.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Ye, Zhenyu,Cui, Shengtao,Shu, Tianyu,et al. Electronic band structure of epitaxial PbTe (111) thin films observed by angle-resolved photoemission spectroscopy[J]. PHYSICAL REVIEW B,2017,95(16). |
| APA | Ye, Zhenyu.,Cui, Shengtao.,Shu, Tianyu.,Ma, Songsong.,Liu, Yang.,...&Wu, Huizhen.(2017).Electronic band structure of epitaxial PbTe (111) thin films observed by angle-resolved photoemission spectroscopy.PHYSICAL REVIEW B,95(16). |
| MLA | Ye, Zhenyu,et al."Electronic band structure of epitaxial PbTe (111) thin films observed by angle-resolved photoemission spectroscopy".PHYSICAL REVIEW B 95.16(2017). |
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