Electronic band structure of epitaxial PbTe (111) thin films observed by angle-resolved photoemission spectroscopy

doi:10.1103/PhysRevB.95.165203

	Electronic band structure of epitaxial PbTe (111) thin films observed by angle-resolved photoemission spectroscopy
	Ye, Zhenyu 1; Cui, Shengtao2,3 ; Shu, Tianyu 1; Ma, Songsong 1; Liu, Yang 1; Sun, Zhe 4; Luo, Jun-Wei 5; Wu, Huizhen 1
	2017-04-24
发表期刊	PHYSICAL REVIEW B
ISSN	2469-9950
卷号	95 期号:16
发表状态	已发表
DOI	10.1103/PhysRevB.95.165203
摘要	Using angle-resolved photoemission spectroscopy (ARPES), we studied bulk and surface electronic band structures of narrow-gap semiconductor lead telluride (PbTe) thin films grown by molecular beam epitaxy both perpendicular and parallel to the Gamma-L direction. The comparison of ARPES data with the first-principles calculation reveals the details of band structures, orbital characters, spin-orbit splitting energies, and surface states. The photon-energy-dependent spectra show the bulk character. Both the L and Sigma valence bands are observed and their energy difference is determined. The spin-orbit splitting energies at L and Gamma points are 0.62 eV and 0.88 eV, respectively. The surface states below and close to the valence band maximum are identified. The valence bands are composed of a mixture of Pb 6s and Te 5 p(z) orbitals with dominant in-plane even parity, which is attributed to the layered distortion in the vicinity of the PbTe (111) surface. These findings provide insights into PbTe fundamental properties and shall benefit relevant thermoelectric and optoelectronic applications.
收录类别	SCI
语种	英语
资助项目	National RAMP;D Program of the MOST, China[2016YFA0300203]
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000400066400010
出版者	AMER PHYSICAL SOC
WOS关键词	TOPOLOGICAL CRYSTALLINE INSULATOR ; PERFORMANCE BULK THERMOELECTRICS ; LEAD-CHALCOGENIDES ; SNTE ; PBSE ; PSEUDOPOTENTIALS ; LASERS ; GETE ; SNSE
原始文献类型	Article
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1405
专题	物质科学与技术学院_PI研究组_柳仲楷组
通讯作者	Wu, Huizhen
作者单位	1.Zhejiang Univ, State Key Lab Silicon Mat, Dept Phys, Hangzhou 310027, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201203, Peoples R China 3.CAS Shanghai Sci Res Ctr, Shanghai 201203, Peoples R China 4.Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China 5.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Ye, Zhenyu,Cui, Shengtao,Shu, Tianyu,et al. Electronic band structure of epitaxial PbTe (111) thin films observed by angle-resolved photoemission spectroscopy[J]. PHYSICAL REVIEW B,2017,95(16).
APA	Ye, Zhenyu.,Cui, Shengtao.,Shu, Tianyu.,Ma, Songsong.,Liu, Yang.,...&Wu, Huizhen.(2017).Electronic band structure of epitaxial PbTe (111) thin films observed by angle-resolved photoemission spectroscopy.PHYSICAL REVIEW B,95(16).
MLA	Ye, Zhenyu,et al."Electronic band structure of epitaxial PbTe (111) thin films observed by angle-resolved photoemission spectroscopy".PHYSICAL REVIEW B 95.16(2017).