Electronic band structure of epitaxial PbTe (111) thin films observed by angle-resolved photoemission spectroscopy
2017-04-24
发表期刊PHYSICAL REVIEW B
ISSN2469-9950
卷号95期号:16
发表状态已发表
DOI10.1103/PhysRevB.95.165203
摘要Using angle-resolved photoemission spectroscopy (ARPES), we studied bulk and surface electronic band structures of narrow-gap semiconductor lead telluride (PbTe) thin films grown by molecular beam epitaxy both perpendicular and parallel to the Gamma-L direction. The comparison of ARPES data with the first-principles calculation reveals the details of band structures, orbital characters, spin-orbit splitting energies, and surface states. The photon-energy-dependent spectra show the bulk character. Both the L and Sigma valence bands are observed and their energy difference is determined. The spin-orbit splitting energies at L and Gamma points are 0.62 eV and 0.88 eV, respectively. The surface states below and close to the valence band maximum are identified. The valence bands are composed of a mixture of Pb 6s and Te 5 p(z) orbitals with dominant in-plane even parity, which is attributed to the layered distortion in the vicinity of the PbTe (111) surface. These findings provide insights into PbTe fundamental properties and shall benefit relevant thermoelectric and optoelectronic applications.
收录类别SCI
语种英语
资助项目National RAMP;D Program of the MOST, China[2016YFA0300203]
WOS研究方向Materials Science ; Physics
WOS类目Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号WOS:000400066400010
出版者AMER PHYSICAL SOC
WOS关键词TOPOLOGICAL CRYSTALLINE INSULATOR ; PERFORMANCE BULK THERMOELECTRICS ; LEAD-CHALCOGENIDES ; SNTE ; PBSE ; PSEUDOPOTENTIALS ; LASERS ; GETE ; SNSE
原始文献类型Article
引用统计
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1405
专题物质科学与技术学院_PI研究组_柳仲楷组
通讯作者Wu, Huizhen
作者单位
1.Zhejiang Univ, State Key Lab Silicon Mat, Dept Phys, Hangzhou 310027, Peoples R China
2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201203, Peoples R China
3.CAS Shanghai Sci Res Ctr, Shanghai 201203, Peoples R China
4.Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China
5.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Ye, Zhenyu,Cui, Shengtao,Shu, Tianyu,et al. Electronic band structure of epitaxial PbTe (111) thin films observed by angle-resolved photoemission spectroscopy[J]. PHYSICAL REVIEW B,2017,95(16).
APA Ye, Zhenyu.,Cui, Shengtao.,Shu, Tianyu.,Ma, Songsong.,Liu, Yang.,...&Wu, Huizhen.(2017).Electronic band structure of epitaxial PbTe (111) thin films observed by angle-resolved photoemission spectroscopy.PHYSICAL REVIEW B,95(16).
MLA Ye, Zhenyu,et al."Electronic band structure of epitaxial PbTe (111) thin films observed by angle-resolved photoemission spectroscopy".PHYSICAL REVIEW B 95.16(2017).
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