Silicon: quantum dot photovoltage triodes

doi:10.1038/s41467-021-27050-9

	Silicon: quantum dot photovoltage triodes
	Zhou, Wen 1; Zheng, Li 1; Ning, Zhijun2 ; Cheng, Xinhong 1; Wang, Fang 3; Xu, Kaimin2 ; Xu, Rui2 ; Liu, Zhongyu2 ; Luo, Man 3; Hu, Weida 3; Guo, Huijun 3; Zhou, Wenjia2 ; Yu, Yuehui 1
	2021-11-18
发表期刊	NATURE COMMUNICATIONS (IF:14.7[JCR-2023],16.1[5-Year])
EISSN	2041-1723
卷号	12 期号:1
DOI	10.1038/s41467-021-27050-9
摘要	Silicon is widespread in modern electronics, but its electronic bandgap prevents the detection of infrared radiation at wavelengths above 1,100 nanometers, which limits its applications in multiple fields such as night vision, health monitoring and space navigation systems. It is therefore of interest to integrate silicon with infrared-sensitive materials to broaden its detection wavelength. Here we demonstrate a photovoltage triode that can use silicon as the emitter but is also sensitive to infrared spectra owing to the heterointegrated quantum dot light absorber. The photovoltage generated at the quantum dot base region, attracting holes from silicon, leads to high responsivity (exceeding 410 A center dot W-1 with V-bias of -1.5 V), and a widely self-tunable spectral response. Our device has the maximal specific detectivity (4.73 x 10(13) Jones with V-bias of -0.4 V) at 1,550 nm among the infrared sensitized silicon detectors, which opens a new path towards infrared and visible imaging in one chip with silicon technology compatibility. While Silicon is widely used for electronic devices, its band-gap limits its use for infrared detection. Here, Zheng et al present a method for overcoming this limitation, by integrating colloidal quantum dots, with the resulting structure exhibiting high sensitivity to infrared radiation.
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收录类别	SCIE
语种	英语
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:000720682300069
出版者	NATURE PORTFOLIO
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/134166
专题	物质科学与技术学院_PI研究组_宁志军组物质科学与技术学院_硕士生物质科学与技术学院_博士生
通讯作者	Zheng, Li; Ning, Zhijun
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China; 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China; 3.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Zhou, Wen,Zheng, Li,Ning, Zhijun,et al. Silicon: quantum dot photovoltage triodes[J]. NATURE COMMUNICATIONS,2021,12(1).
APA	Zhou, Wen.,Zheng, Li.,Ning, Zhijun.,Cheng, Xinhong.,Wang, Fang.,...&Yu, Yuehui.(2021).Silicon: quantum dot photovoltage triodes.NATURE COMMUNICATIONS,12(1).
MLA	Zhou, Wen,et al."Silicon: quantum dot photovoltage triodes".NATURE COMMUNICATIONS 12.1(2021).