Charge density waves and metal-insulator transition in TaSe2

doi:10.1103/PhysRevB.104.115136

	Charge density waves and metal-insulator transition in TaSe2
	Huang, Benrui 1,3; Wang, Lin 2; Ma, Ni 1,3; Li, Kaiyi4 ; Song, Jingpeng 1,3; Chen, Gang 2; Li, Ang 1,3
	2021-09-20
发表期刊	PHYSICAL REVIEW B (IF:3.2[JCR-2023],3.3[5-Year])
ISSN	2469-9950
EISSN	2469-9969
卷号	104 期号:11
DOI	10.1103/PhysRevB.104.115136
摘要	Using scanning tunneling microscopy/spectroscopy (STM/STS), we investigate the local atomic and electronic structure of the archetype charge density wave (CDW) system TaSe2. Two structural phases with distinct CDW orders, namely 3 x3-2H and root 13 x root 13-1T phases, coexist at low temperatures and an intermediate phase is discovered around the phase boundaries demonstrating energy-dependent 2H and 1T electronic wave-function textures. The existence of such an intermediate state and its dual electronic appearance indicate that the 2H-1T transition is not instantaneous. Along with the gradual recovery of root 13 x root 13-1T lattice distortions towards the 2H phase, an insulator-metal transition occurs as evidenced by the collapse of the Mott insulating gap. Our results provide a direct visualization of the strong link between the Mott insulating state and the local lattice distortions.
关键词	Charge density Electronic structure Metal insulator boundaries Metal insulator transition Metal recovery Scanning tunneling microscopy Semiconductor insulator boundaries Textures Wave functions Charge density wave systems Charge density waves Electronic wave functions Energy dependent Intermediate phasis Local atomic structures Local electronic structures Lows temperatures Scanning tunneling microscopy/spectroscopy Structural phasis
收录类别	SCIE ; EI
语种	英语
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000704415300004
出版者	AMER PHYSICAL SOC
EI入藏号	20213910937280
EI主题词	Charge density waves
EI分类号	701.1 Electricity: Basic Concepts and Phenomena ; 714.2 Semiconductor Devices and Integrated Circuits ; 921 Mathematics
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/128426
专题	物质科学与技术学院_硕士生
通讯作者	Li, Ang
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China; 2.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China; 3.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China; 4.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
推荐引用方式 GB/T 7714	Huang, Benrui,Wang, Lin,Ma, Ni,et al. Charge density waves and metal-insulator transition in TaSe2[J]. PHYSICAL REVIEW B,2021,104(11).
APA	Huang, Benrui.,Wang, Lin.,Ma, Ni.,Li, Kaiyi.,Song, Jingpeng.,...&Li, Ang.(2021).Charge density waves and metal-insulator transition in TaSe2.PHYSICAL REVIEW B,104(11).
MLA	Huang, Benrui,et al."Charge density waves and metal-insulator transition in TaSe2".PHYSICAL REVIEW B 104.11(2021).