A Full CMOS Quenching Circuit With Fuse Protection for InGaAs/InP Single Photon Detectors

doi:10.1109/TCSII.2021.3074022

	A Full CMOS Quenching Circuit With Fuse Protection for InGaAs/InP Single Photon Detectors
	Yunduo Li1,3 ; Lianhua Ye 1; Xu Liu 1; Songlei Huang 1; Yingjie Ma 1; Zhangcheng Huang 2; Haimei Gong 1
	2021-10
发表期刊	IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS (IF:4.0[JCR-2023],3.7[5-Year])
ISSN	1549-7747
EISSN	1558-3791
卷号	68 期号:10 页码:3224-3228
发表状态	已发表
DOI	10.1109/TCSII.2021.3074022
摘要	This brief presents a new quenching circuit with a metal fuse that aims to protect readout integrated circuit (ROIC) from breakdown due to unexpectedly high voltage from Geigermode avalanche photodiode (GmAPD) arrays. Fuse resistances in states of pre-burnout and post-burnout are investigated to satisfy requirements of rapid quenching and high voltage protection, respectively. Several fuse options using commercial mixed-signal CMOS processes, such as metal and polysilicon, are compared in detail. Meander metal fuse is the most suitable candidate according to measurement results. A rapidly quenching circuit integrated with metal fuse is developed using a 0.18 mu m CMOS process. After being bonding with GmAPDs and resistors, test results show that this circuit could endure a high voltage of 75 V, demonstrating that this innovative design can contribute in a low-cost and high-reliable way to high-yield large-format GmAPD arrays.
关键词	Fuses protection quenching circuit InGaAs/InP Geiger-mode avalanche photodiode single photon detection Avalanche photodiodes CMOS integrated circuits Gallium compounds Metals Particle beams Photons Quenching Semiconducting indium gallium arsenide Timing circuits Fuse protection Geiger mode avalanche photodiode High voltage protections Innovative design Quenching circuits Rapidly quenching Readout integrated circuits Single photon detectors
URL	查看原文
收录类别	SCIE ; EI
语种	英语
WOS研究方向	Engineering
WOS类目	Engineering, Electrical & Electronic
WOS记录号	WOS:000698857900011
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
EI入藏号	20211710258591
EI主题词	Surge protection
EI分类号	537.1 Heat Treatment Processes ; 704 Electric Components and Equipment ; 712.1.2 Compound Semiconducting Materials ; 713.4 Pulse Circuits ; 714.2 Semiconductor Devices and Integrated Circuits ; 931.3 Atomic and Molecular Physics ; 932.1 High Energy Physics
原始文献类型	Article
来源库	IEEE
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/128309
专题	信息科学与技术学院信息科学与技术学院_硕士生
作者单位	1.State Key Laboratories of Transducer Technology, Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China 2.Frontier Institute of Chip and System, Fudan University, Shanghai, China 3.School of Information Science and Technology, ShanghaiTech University, Shanghai, China
第一作者单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Yunduo Li,Lianhua Ye,Xu Liu,et al. A Full CMOS Quenching Circuit With Fuse Protection for InGaAs/InP Single Photon Detectors[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS,2021,68(10):3224-3228.
APA	Yunduo Li.,Lianhua Ye.,Xu Liu.,Songlei Huang.,Yingjie Ma.,...&Haimei Gong.(2021).A Full CMOS Quenching Circuit With Fuse Protection for InGaAs/InP Single Photon Detectors.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS,68(10),3224-3228.
MLA	Yunduo Li,et al."A Full CMOS Quenching Circuit With Fuse Protection for InGaAs/InP Single Photon Detectors".IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS 68.10(2021):3224-3228.