Development of 512 x 2-element InGaAs spectral sensor IoT node
2021-10
发表期刊红外与毫米波学报 (IF:0.6[JCR-2023],0.5[5-Year])
ISSN1001-9014
卷号40期号:5页码:582-588
发表状态已发表
DOI10.11972/j.issn.1001-9014.2021.05.003
摘要

Based on a 512 x 2-element InGaAs spectrum module, a new spectral sensing IoT node is developed. The detector uses two parallel column structure with 25 mu m pixel pitch. In order to reduce the impact on an abnormal response to a single pixel, the data onto two channels is averaging in the circuit. The experimental results show that the test wavelength range of this node is 976 similar to 1700 nm, and the spectral resolution is 13. 5 nm. The wavelength accuracy is better than 3. 2 nm, and the wavelength repeatability is better than 0. 3 nm. The dynamic range is 2300: 1, and the absorbance repeatability is 0. 0011 AU. The baseline stability of light source is better than 0. 0001 A/h. The function of the sensor node was verified by using alcoholic beverages samples of different nominal concentrations.

关键词short-wave infrared spectral-node LVF InGaAs detector Gallium alloys Indium alloys Infrared radiation Light sources Pixels Semiconducting indium Semiconductor alloys Sensor nodes InGaAs detectors Pixel pitch Short wave infrared Single pixel Spectra's Spectral sensing Spectral sensors Spectral node Two channel
收录类别EI ; SCIE ; 北大核心 ; SCI
语种中文
WOS研究方向Optics
WOS类目Optics
WOS记录号WOS:000695031600003
出版者SCIENCE PRESS
EI入藏号20214511118437
EI主题词Semiconducting indium gallium arsenide
EI分类号549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals ; 712.1 Semiconducting Materials ; 712.1.1 Single Element Semiconducting Materials ; 712.1.2 Compound Semiconducting Materials ; 716.3 Radio Systems and Equipment ; 722 Computer Systems and Equipment ; 741.1 Light/Optics
原始文献类型Article
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文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/128218
专题信息科学与技术学院_硕士生
通讯作者Huang Song-Lei; Fang Jia-Xiong
作者单位
1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Labs Transducer Technol, Shanghai 200083, Peoples R China;
2.Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China;
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
4.Shanghai Tech Univ, Shanghai 201210, Peoples R China
推荐引用方式
GB/T 7714
Ke Peng-Yu,Liu Meng-Xuan,Wang Xu-Quan,et al. Development of 512 x 2-element InGaAs spectral sensor IoT node[J]. 红外与毫米波学报,2021,40(5):582-588.
APA Ke Peng-Yu,Liu Meng-Xuan,Wang Xu-Quan,Huang Song-Lei,Zhang Yong-Gang,&Fang Jia-Xiong.(2021).Development of 512 x 2-element InGaAs spectral sensor IoT node.红外与毫米波学报,40(5),582-588.
MLA Ke Peng-Yu,et al."Development of 512 x 2-element InGaAs spectral sensor IoT node".红外与毫米波学报 40.5(2021):582-588.
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