ShanghaiTech University Knowledge Management System
Development of 512 x 2-element InGaAs spectral sensor IoT node | |
2021-10 | |
发表期刊 | 红外与毫米波学报 (IF:0.6[JCR-2023],0.5[5-Year]) |
ISSN | 1001-9014 |
卷号 | 40期号:5页码:582-588 |
发表状态 | 已发表 |
DOI | 10.11972/j.issn.1001-9014.2021.05.003 |
摘要 | Based on a 512 x 2-element InGaAs spectrum module, a new spectral sensing IoT node is developed. The detector uses two parallel column structure with 25 mu m pixel pitch. In order to reduce the impact on an abnormal response to a single pixel, the data onto two channels is averaging in the circuit. The experimental results show that the test wavelength range of this node is 976 similar to 1700 nm, and the spectral resolution is 13. 5 nm. The wavelength accuracy is better than 3. 2 nm, and the wavelength repeatability is better than 0. 3 nm. The dynamic range is 2300: 1, and the absorbance repeatability is 0. 0011 AU. The baseline stability of light source is better than 0. 0001 A/h. The function of the sensor node was verified by using alcoholic beverages samples of different nominal concentrations. |
关键词 | short-wave infrared spectral-node LVF InGaAs detector Gallium alloys Indium alloys Infrared radiation Light sources Pixels Semiconducting indium Semiconductor alloys Sensor nodes InGaAs detectors Pixel pitch Short wave infrared Single pixel Spectra's Spectral sensing Spectral sensors Spectral node Two channel |
收录类别 | EI ; SCIE ; 北大核心 ; SCI |
语种 | 中文 |
WOS研究方向 | Optics |
WOS类目 | Optics |
WOS记录号 | WOS:000695031600003 |
出版者 | SCIENCE PRESS |
EI入藏号 | 20214511118437 |
EI主题词 | Semiconducting indium gallium arsenide |
EI分类号 | 549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals ; 712.1 Semiconducting Materials ; 712.1.1 Single Element Semiconducting Materials ; 712.1.2 Compound Semiconducting Materials ; 716.3 Radio Systems and Equipment ; 722 Computer Systems and Equipment ; 741.1 Light/Optics |
原始文献类型 | Article |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/128218 |
专题 | 信息科学与技术学院_硕士生 |
通讯作者 | Huang Song-Lei; Fang Jia-Xiong |
作者单位 | 1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Labs Transducer Technol, Shanghai 200083, Peoples R China; 2.Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China; 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China; 4.Shanghai Tech Univ, Shanghai 201210, Peoples R China |
推荐引用方式 GB/T 7714 | Ke Peng-Yu,Liu Meng-Xuan,Wang Xu-Quan,et al. Development of 512 x 2-element InGaAs spectral sensor IoT node[J]. 红外与毫米波学报,2021,40(5):582-588. |
APA | Ke Peng-Yu,Liu Meng-Xuan,Wang Xu-Quan,Huang Song-Lei,Zhang Yong-Gang,&Fang Jia-Xiong.(2021).Development of 512 x 2-element InGaAs spectral sensor IoT node.红外与毫米波学报,40(5),582-588. |
MLA | Ke Peng-Yu,et al."Development of 512 x 2-element InGaAs spectral sensor IoT node".红外与毫米波学报 40.5(2021):582-588. |
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