High-Speed 850 nm Photodetector for Zero-Bias Operation
Xie, Zhiyang1,2,3; Zhou, Zhiqi1; Li, Linze1; Deng, Zhuo1; Ji, Haiming3; Chen, Baile1
2022
Source PublicationIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
ISSN1077-260X
EISSN1558-4542
Volume28Issue:2
Status已发表
DOI10.1109/JSTQE.2021.3095470
Abstract

High-speed photodetector operating at 850 nm wavelength with a large diameter and high quantum efficiency is desirable to meet the growing demands of short-reach optical links for high-performance computing systems. Zero-bias operation of the high-speed photodetectors can reduce power consumption, minimize system complexity of the optical transceivers and reduce the radiation damage in a harsh environment. Traditional p-i-n photodetectors for 850 nm applications often require a high reverse bias to accelerate the carrier transport for high-speed data transmission. In this work, we demonstrate a high-speed and low dark current modified uni-traveling-carrier photodiode based on GaAs/AlGaAs at 850 nm wavelength operating under zero bias with a quantum efficiency of 73%. The 3-dB bandwidth of the 20 mu m and 40 mu m diameter devices is 22.5 GHz and 13.3 GHz, respectively. A clear eye pattern is demonstrated at a 25.8 Gbit/s data rate for the device under zero-bias operation. To the best of our knowledge, this photodetector demonstrates the highest 3-dB bandwidth among all the zero-bias 850 nm photodetectors reported to date.

KeywordGallium arsenide Bandwidth Temperature measurement Dark current PIN photodiodes Quantum capacitance Optical fiber communication 850 nm wavelength photodetector high-speed photodetector low dark current zero-bias operation
Indexed BySCIE
WOS Research AreaEngineering ; Physics ; Optics
WOS SubjectEngineering, Electrical & Electronic ; Quantum Science & Technology ; Optics ; Physics, Applied
WOS IDWOS:000688263500001
PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Original Document TypeArticle
Citation statistics
Cited Times [WOS]:0   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttps://kms.shanghaitech.edu.cn/handle/2MSLDSTB/128028
Collection信息科学与技术学院_硕士生
信息科学与技术学院_PI研究组_陈佰乐组
信息科学与技术学院_博士生
Affiliation1.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China;
2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China;
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
First Author AffilicationSchool of Information Science and Technology
First Signature AffilicationSchool of Information Science and Technology
Recommended Citation
GB/T 7714
Xie, Zhiyang,Zhou, Zhiqi,Li, Linze,et al. High-Speed 850 nm Photodetector for Zero-Bias Operation[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS,2022,28(2).
APA Xie, Zhiyang,Zhou, Zhiqi,Li, Linze,Deng, Zhuo,Ji, Haiming,&Chen, Baile.(2022).High-Speed 850 nm Photodetector for Zero-Bias Operation.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS,28(2).
MLA Xie, Zhiyang,et al."High-Speed 850 nm Photodetector for Zero-Bias Operation".IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 28.2(2022).
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