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ShanghaiTech University Knowledge Management System
| Characteristics of thin InAlAs digital alloy avalanche photodiodes | |
| 2021-08-15 | |
| 发表期刊 | OPTICS LETTERS (IF:3.1[JCR-2023],3.1[5-Year]) |
| ISSN | 0146-9592 |
| EISSN | 1539-4794 |
| 卷号 | 46期号:16页码:3841-3844 |
| 发表状态 | 已发表 |
| DOI | 10.1364/OL.435025 |
| 摘要 | InP-based avalanche photodiodes (APDs) are widely used in short-wave infrared (SWIR) communications. In this work, a thin (200 nm nominal) InAlAs digital alloy layer consisting of two monolayer (ML) InAs and two ML AlAs was grown on InP substrate and investigated in detail. APDs with p-i-n and n-i-p structures were fabricated and characterized. The current-voltage, capacitance-voltage characteristics, and excess noise were measured at room temperature with different laser wavelengths, and the measured effective k value (ratio of impact ionization coefficients) is about 0.15 with the multiplication gain up to 12. The randomly-generated path length (RPL) model was carried out to analyze the dead space effect. Our thin digital alloy successfully reduced excess noise compared with conventional In0.52Al0.48As random alloy without introducing new elements and shows the potential for high-speed, low noise APD applications. (C) 2021 Optical Society of America |
| 收录类别 | SCIE ; EI |
| 语种 | 英语 |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| WOS记录号 | WOS:000685553000007 |
| 出版者 | OPTICAL SOC AMER |
| 原始文献类型 | Article |
| 引用统计 | 正在获取...
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| 文献类型 | 期刊论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/127985 |
| 专题 | 信息科学与技术学院_博士生 信息科学与技术学院_PI研究组_陈佰乐组 信息科学与技术学院_硕士生 |
| 通讯作者 | Lu, Hong |
| 作者单位 | 1.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China; 2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China; 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China; 4.Nanjing Univ, Coll Engn & Appl Sci, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China; 5.Nanjing Univ, Coll Engn & Appl Sci, Dept Mat Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China; 6.Nanjing Univ, Jiangsu Key Lab Artificial Funct Mat, Nanjing 210093, Jiangsu, Peoples R China; 7.Shanghai Engn Res Ctr Energy Efficient & Custom A, Shanghai 201210, Peoples R China |
| 第一作者单位 | 信息科学与技术学院 |
| 第一作者的第一单位 | 信息科学与技术学院 |
| 推荐引用方式 GB/T 7714 | Wang, Wenyang,Yao, Jinshan,Wang, Jingyi,et al. Characteristics of thin InAlAs digital alloy avalanche photodiodes[J]. OPTICS LETTERS,2021,46(16):3841-3844. |
| APA | Wang, Wenyang.,Yao, Jinshan.,Wang, Jingyi.,Deng, Zhuo.,Xie, Zhiyang.,...&Chen, Baile.(2021).Characteristics of thin InAlAs digital alloy avalanche photodiodes.OPTICS LETTERS,46(16),3841-3844. |
| MLA | Wang, Wenyang,et al."Characteristics of thin InAlAs digital alloy avalanche photodiodes".OPTICS LETTERS 46.16(2021):3841-3844. |
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