Anion-Dependent Molecular Doping and Charge Transport in Ferric Salt-Doped P3HT for Thermoelectric Application
2021-03-23
发表期刊ACS APPLIED ELECTRONIC MATERIALS (IF:4.3[JCR-2023],4.4[5-Year])
ISSN2637-6113
EISSN2637-6113
卷号3期号:3页码:1252-1259
发表状态已发表
DOI10.1021/acsaelm.0c01067
摘要

The effect of different iron (III) dopants on the doping process and charge transport properties based on a poly(3-hexylthiophene) (P3HT) film was investigated. It is found that the doping level is dependent on not only the driving force for charge transfer but also the miscibility between a polymer and a dopant, while the mobile carrier transport is significantly controlled by the microstructure upon doping. A high electrical conductivity (128 S cm(-1)) is obtained for a FeCl3-doped P3HT film among three different doped P3HT combinations, although a low doping level is observed in this film. In contrast, a highest doping level but a low electrical conductivity (65 S cm(-1)) is achieved for Fe(OTf)(3)-doped P3HT. Another ferric salt with a larger size anion and strong oxidation ability, Fe(Tos)(3), endows both much low doping level and low electrical conductivity (9 S cm(-1)). Grazing-incidence wide-angle X-ray scattering (GIWAXS) shows that a much stronger pi-pi stacking of P3HT and larger crystalline domains may exist in Fe(OTf)(3)-doped P3HT compared with those of FeCl3-doped P3HT. However, Hall-effect measurements show that the high electrical conductivity of FeCl3-doped P3HT is mainly attributed to higher carrier mobility. Temperature-dependent conductivity experiments demonstrate that smaller activation energy for carrier transport is needed for a FeCl3-doped P3HT film. These results indicate that smooth and continuous transport paths are formed in a FeCl3-doped film, contributing to high carrier mobility while discrete domains in Fe(OTf)(3)-doped film hamper the carrier transport. A prototype device with a five-leg FeCl3-doped P3HT film connected with a silver paste was fabricated. The measured maximum output power is about 4.64 nW at the temperature difference of 23.3 K. Our results suggest that the interaction between dopant anions and polymer chains is crucial for high electrical conductivity by improving morphologies to achieve ionized carriers' transfer into much mobile carriers.

关键词chemical doping polymer semiconductor charge transport ferric salts thermoelectric materials
收录类别SCIE ; EI
语种英语
WOS研究方向Engineering ; Materials Science
WOS类目Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary
WOS记录号WOS:000634556600025
出版者AMER CHEMICAL SOC
原始文献类型Article
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文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/127889
专题物质科学与技术学院_博士生
通讯作者Li, Hui; Chen, Lidong
作者单位
1.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China;
2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China;
3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
推荐引用方式
GB/T 7714
Wu, Lili,Li, Hui,Chai, Haoyu,et al. Anion-Dependent Molecular Doping and Charge Transport in Ferric Salt-Doped P3HT for Thermoelectric Application[J]. ACS APPLIED ELECTRONIC MATERIALS,2021,3(3):1252-1259.
APA Wu, Lili,Li, Hui,Chai, Haoyu,Xu, Qing,Chen, Yanling,&Chen, Lidong.(2021).Anion-Dependent Molecular Doping and Charge Transport in Ferric Salt-Doped P3HT for Thermoelectric Application.ACS APPLIED ELECTRONIC MATERIALS,3(3),1252-1259.
MLA Wu, Lili,et al."Anion-Dependent Molecular Doping and Charge Transport in Ferric Salt-Doped P3HT for Thermoelectric Application".ACS APPLIED ELECTRONIC MATERIALS 3.3(2021):1252-1259.
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