STORAGE UNIT OF NEW LOW-POWER-CONSUMPTION STATIC RANDOM ACCESS MEMORY,  AND USE THEREOF

	STORAGE UNIT OF NEW LOW-POWER-CONSUMPTION STATIC RANDOM ACCESS MEMORY, AND USE THEREOF
翻译题名	低功耗新型静态随机存取存储器的存储单元及应用
申请号	WOCN20096479
	2020-06-17
公开（公告）号	WO2021057114A1
公开日期	2021-04-01
摘要	A storage unit of a new low-power-consumption static random access memory. The storage unit is characterized by comprising five word lines and four bit lines, wherein the five word lines are respectively a word line I, a word line II, a word line III, a word line IV and a word line V, and the four bit lines are respectively a bit line I, a bit line II, a bit line III and a bit line IV. Compared with the most advanced technology, the energy consumption of the structure is reduced to 24.5/% of the original energy consumption, and the structure has the following advantages : the characteristic of a CMOS channel current and a gate voltage being in positive correlation is used, and the result of using a group of analog voltage values as gate voltages to drive an SRAM is at the same starting time, with the voltage analog value on the bit lines representing a result of multiplication.
翻译摘要	一种低功耗新型静态随机存取存储器的存储单元，其特征在于，包括五条字线及四条位线，五条字线分别为字线一、字线二、字线三、字线四及字线五，四条位线分别为位线一、位线二、位线三及位线四。该结构与最先进的技术相比，能耗缩小为原来的24.5％，并具有如下优点：利用了cmos沟道电流和栅极电压成正相关的特点，以及用一组模拟电压值作为栅极电压驱动SRAM的结果是，在相同的开启时间中，位线上的电压模拟值代表了乘法的结果。
当前权利人	SHANGHAITECH UNIVERSITY
专利代理人	上海申汇专利代理有限公司 ; SHANGHAI SHENHUI PATENT AGENT CO., LTD.
代理机构	上海申汇专利代理有限公司 ; SHANGHAI SHENHUI PATENT AGENT CO., LTD.
专利申请人	SHANGHAITECH UNIVERSITY
	WANG Yuqi; HA Yajun
公开国别	世界知识产权组织
公开国别简称	WO
IPC 分类号	G11C11//418
CPC分类号	G11C11//418; G11C11//419
专利有效性	PCT-有效期满
专利类型	发明申请
专利类型字典	1
当前法律状态	未进入国家阶段-PCT有效期满
简单同族	CN110970071A; WO2021057114A1
扩展同族	WO2021057114A1; CN110970071A
INPADOC 同族	WO2021057114A1; CN110970071A
文献类型	专利
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/127118
专题	信息科学与技术学院_硕士生信息科学与技术学院_PI研究组_哈亚军组
作者单位	SHANGHAITECH UNIVERSITY
推荐引用方式 GB/T 7714	WANG Yuqi, HA Yajun. STORAGE UNIT OF NEW LOW-POWER-CONSUMPTION STATIC RANDOM ACCESS MEMORY, AND USE THEREOF. WOCN20096479[P]. 2020-06-17.