Dynamic properties of two-state lasing quantum dot laser for external optical feedback resistant applications
2020
会议录名称2020 INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD)
ISSN2158-3234
页码79-80
发表状态已发表
DOI10.1109/NUSOD49422.2020.9217720
摘要

This work investigates the dynamics of two-state quantum dot lasers through semi-analytically solving a set of rate equations. Simulations reveal that the occurrence of excited state lasing reduces the damping factor and relaxation oscillation frequency of the laser while increases the linewidth enhancement factor associated to the ground state transition. These results are in good agreement with the experimental observation showing that the quantum dot laser becomes more sensitive to external optical feedback at excited state lasing threshold. This work brings novel insights in the understanding of quantum dot laser physics that are useful for designing feedback resistant lasers in photonic integrated technologies.

关键词Semiconductor lasers quantum dots linewidth enhancement factor external optical feedback
会议名称International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
会议地点Turin, ITALY
会议日期SEP 14-18, 2020
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收录类别CPCI ; CPCI-S ; EI
语种英语
WOS记录号WOS:000628528900040
出版者IEEE
EI入藏号2158-3242
来源库IEEE
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文献类型会议论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/126231
专题信息科学与技术学院
信息科学与技术学院_PI研究组_王成组
信息科学与技术学院_硕士生
作者单位
1.LTCI, Télécom Paris, Institut Polytechnique de Paris, Palaiseau, France
2.School of Information Science and Technology, ShanghaiTech University, Shanghai, China
3.Center for High Technology Materials, The University of New-Mexico, Albuquerque, NM, USA
推荐引用方式
GB/T 7714
Jianan Duan,Yueguang Zhou,Heming Huang,et al. Dynamic properties of two-state lasing quantum dot laser for external optical feedback resistant applications[C]:IEEE,2020:79-80.
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