ShanghaiTech University Knowledge Management System
Synthesis and pressure study of bubbles in hexagonal boron nitride interlayer | |
2021-03-20 | |
发表期刊 | 物理学报 (IF:0.8[JCR-2023],0.8[5-Year]) |
ISSN | 1000-3290 |
卷号 | 70期号:6 |
发表状态 | 已发表 |
DOI | 10.7498/aps.70.20201482 |
摘要 | Hexagonal boron nitride (h-BN) is considered as an ideal substrate material for new electronic devices and nano-electromechanical (NEMS) devices, owing to its hexagonal network lattice structure and high chemical and mechanical stability. It can be used to seal gas with a long-term stability, and then has a big potential in further applications in electronics and NEMS. Recently, researchers have discovered that hydrogen atoms can penetrate multiple layers of h-BN non-destructively, forming the bubbles between layers, which can be used as NEMS devices. In this article, we investigate the effect of hydrogen plasma treatment duration on the size of h-BN bubbles. It is found that the size of bubbles becomes larger with the increase of treatment time while their distribution density decreases. It is also observed that the prepared h-BN bubbles have similar morphological characteristics, which are related to Young's modulus of h-BN and interlayer van der Waals interaction. With the help of force-displacement curve measurement, it is obtained that the internal pressure is about 1-2 MPa for micro-sized bubbles, while the internal pressure of nano-sized bubbles can reach a value of GPa. |
关键词 | h-BN plasma treatment nano bubbles van der Waals heterostructure |
收录类别 | SCIE ; EI ; 北大核心 ; SCI |
语种 | 中文 |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
WOS记录号 | WOS:000631862800036 |
出版者 | CHINESE PHYSICAL SOC |
引用统计 | 正在获取...
|
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/126156 |
专题 | 物质科学与技术学院_硕士生 物质科学与技术学院_特聘教授组_谢晓明组 物质科学与技术学院_博士生 |
通讯作者 | Wang Hao-Min |
作者单位 | 1.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China; 2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China; 3.Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China; 4.CAS Ctr Excellence Superconducting Elect CENSE, Shanghai 200050, Peoples R China |
第一作者单位 | 物质科学与技术学院 |
第一作者的第一单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Jiang Cheng-Xin,Chen Ling-Xiu,Wang Hui-Shan,et al. Synthesis and pressure study of bubbles in hexagonal boron nitride interlayer[J]. 物理学报,2021,70(6). |
APA | Jiang Cheng-Xin.,Chen Ling-Xiu.,Wang Hui-Shan.,Wang Xiu-Jun.,Chen Chen.,...&Xie Xiao-Ming.(2021).Synthesis and pressure study of bubbles in hexagonal boron nitride interlayer.物理学报,70(6). |
MLA | Jiang Cheng-Xin,et al."Synthesis and pressure study of bubbles in hexagonal boron nitride interlayer".物理学报 70.6(2021). |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 |
修改评论
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。