Synthesis and pressure study of bubbles in hexagonal boron nitride interlayer
2021-03-20
发表期刊物理学报 (IF:0.8[JCR-2023],0.8[5-Year])
ISSN1000-3290
卷号70期号:6
发表状态已发表
DOI10.7498/aps.70.20201482
摘要

Hexagonal boron nitride (h-BN) is considered as an ideal substrate material for new electronic devices and nano-electromechanical (NEMS) devices, owing to its hexagonal network lattice structure and high chemical and mechanical stability. It can be used to seal gas with a long-term stability, and then has a big potential in further applications in electronics and NEMS. Recently, researchers have discovered that hydrogen atoms can penetrate multiple layers of h-BN non-destructively, forming the bubbles between layers, which can be used as NEMS devices. In this article, we investigate the effect of hydrogen plasma treatment duration on the size of h-BN bubbles. It is found that the size of bubbles becomes larger with the increase of treatment time while their distribution density decreases. It is also observed that the prepared h-BN bubbles have similar morphological characteristics, which are related to Young's modulus of h-BN and interlayer van der Waals interaction. With the help of force-displacement curve measurement, it is obtained that the internal pressure is about 1-2 MPa for micro-sized bubbles, while the internal pressure of nano-sized bubbles can reach a value of GPa.

关键词h-BN plasma treatment nano bubbles van der Waals heterostructure
收录类别SCIE ; EI ; 北大核心 ; SCI
语种中文
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
WOS记录号WOS:000631862800036
出版者CHINESE PHYSICAL SOC
引用统计
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文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/126156
专题物质科学与技术学院_硕士生
物质科学与技术学院_特聘教授组_谢晓明组
物质科学与技术学院_博士生
通讯作者Wang Hao-Min
作者单位
1.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China;
2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China;
3.Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China;
4.CAS Ctr Excellence Superconducting Elect CENSE, Shanghai 200050, Peoples R China
第一作者单位物质科学与技术学院
第一作者的第一单位物质科学与技术学院
推荐引用方式
GB/T 7714
Jiang Cheng-Xin,Chen Ling-Xiu,Wang Hui-Shan,et al. Synthesis and pressure study of bubbles in hexagonal boron nitride interlayer[J]. 物理学报,2021,70(6).
APA Jiang Cheng-Xin.,Chen Ling-Xiu.,Wang Hui-Shan.,Wang Xiu-Jun.,Chen Chen.,...&Xie Xiao-Ming.(2021).Synthesis and pressure study of bubbles in hexagonal boron nitride interlayer.物理学报,70(6).
MLA Jiang Cheng-Xin,et al."Synthesis and pressure study of bubbles in hexagonal boron nitride interlayer".物理学报 70.6(2021).
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