High-frequency rectifiers based on type-II Dirac fermions

doi:10.1038/s41467-021-21906-w

	High-frequency rectifiers based on type-II Dirac fermions
	Zhang, Libo 1,2; Chen, Zhiqingzi 1; Zhang, Kaixuan 1,2; Wang, Lin 1; Xu, Huang 1; Han, Li 1,2; Guo, Wanlong1,3 ; Yang, Yao1,3 ; Kuo, Chia-Nung 4; Lue, Chin Shan 4; Mondal, Debashis 5,6; Fuji, Jun 5; Vobornik, Ivana 5; Ghosh, Barun 7; Agarwal, Amit 7; Xing, Huaizhong 2,8; Chen, Xiaoshuang1,3 ; Politano, Antonio 9,10; Lu, Wei1,3
	2021-03-11
发表期刊	NATURE COMMUNICATIONS
ISSN	2041-1723
卷号	12 期号:1
发表状态	已发表
DOI	10.1038/s41467-021-21906-w
摘要	The advent of topological semimetals enables the exploitation of symmetry-protected topological phenomena and quantized transport. Here, we present homogeneous rectifiers, converting high-frequency electromagnetic energy into direct current, based on low-energy Dirac fermions of topological semimetal-NiTe2, with state-of-the-art efficiency already in the first implementation. Explicitly, these devices display room-temperature photosensitivity as high as 251mAW(-1) at 0.3THz in an unbiased mode, with a photocurrent anisotropy ratio of 22, originating from the interplay between the spin-polarized surface and bulk states. Device performances in terms of broadband operation, high dynamic range, as well as their high sensitivity, validate the immense potential and unique advantages associated to the control of nonequilibrium gapless topological states via built-in electric field, electromagnetic polarization and symmetry breaking in topological semimetals. These findings pave the way for the exploitation of topological phase of matter for high-frequency operations in polarization-sensitive sensing, communications and imaging. High-frequency rectifiers at terahertz regime are pivotal components in modern communication, whereas the drawbacks in semiconductor junctions-based devices inhibit their usages. Here, the authors report electromagnetic rectification with high signal-to-noise ratio driven by chiral Bloch-electrons in type-II Dirac semimetal NiTe2-based device allowing for efficient THz detection.
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收录类别	SCI ; SCIE
语种	英语
WOS研究方向	Multidisciplinary Sciences
WOS类目	Science & Technology - Other Topics
WOS记录号	WOS:000629597700009
出版者	NATURE RESEARCH
原始文献类型	Article
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/126093
专题	物质科学与技术学院_硕士生物质科学与技术学院_特聘教授组_陈效双组物质科学与技术学院_特聘教授组_陆卫组物质科学与技术学院_博士生
通讯作者	Wang, Lin; Xing, Huaizhong; Chen, Xiaoshuang; Politano, Antonio
作者单位	1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai, Peoples R China; 2.Donghua Univ, Dept Optoelect Sci & Engn, Shanghai, Peoples R China; 3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai, Peoples R China; 4.Natl Cheng Kung Univ, Dept Phys, Tainan, Taiwan; 5.Consiglio Nazl Ric CNR, Ist Officina Mat IOM, Lab TASC Area Sci, Trieste, Italy; 6.Abdus Salaam Int Ctr Theoret Phys, Trieste, Italy; 7.Indian Inst Technol Kanpur, Dept Phys, Kanpur, Uttar Pradesh, India; 8.Shanghai Inst Intelligent Elect & Syst, Shanghai, Peoples R China; 9.Univ Aquila, Dept Phys & Chem Sci, Laquila, AQ, Italy; 10.CNR IMM Ist Microelettron & Microsistemi, Catania, Italy
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Zhang, Libo,Chen, Zhiqingzi,Zhang, Kaixuan,et al. High-frequency rectifiers based on type-II Dirac fermions[J]. NATURE COMMUNICATIONS,2021,12(1).
APA	Zhang, Libo.,Chen, Zhiqingzi.,Zhang, Kaixuan.,Wang, Lin.,Xu, Huang.,...&Lu, Wei.(2021).High-frequency rectifiers based on type-II Dirac fermions.NATURE COMMUNICATIONS,12(1).
MLA	Zhang, Libo,et al."High-frequency rectifiers based on type-II Dirac fermions".NATURE COMMUNICATIONS 12.1(2021).