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Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate | |
2021-02 | |
Source Publication | MICROMACHINES
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EISSN | 2072-666X |
Volume | 12Issue:2Pages:#VALUE! |
DOI | 10.3390/mi12020143 |
Abstract | As a result of their IC compatibility, high acoustic velocity, and high thermal conductivity, aluminum nitride (AlN) resonators have been studied extensively over the past two decades, and widely implemented for radio frequency (RF) and sensing applications. However, the temperature coefficient of frequency (TCF) of AlN is -25 ppm/degrees C, which is high and limits its RF and sensing application. In contrast, the TCF of heavily doped silicon is significantly lower than the TCF of AlN. As a result, this study uses an AlN contour mode ring type resonator with heavily doped silicon as its bottom electrode in order to reduce the TCF of an AlN resonator. A simple microfabrication process based on Silicon-on-Insulator (SOI) is presented. A thickness ratio of 20:1 was chosen for the silicon bottom electrode to the AlN layer in order to make the TCF of the resonator mainly dependent upon heavily doped silicon. A cryogenic cooling test down to 77 K and heating test up to 400 K showed that the resonant frequency of the AlN resonator changed linearly with temperature change; the TCF was shown to be -9.1 ppm/degrees C. The temperature hysteresis characteristic of the resonator was also measured, and the AlN resonator showed excellent temperature stability. The quality factor versus temperature characteristic was also studied between 77 K and 400 K. It was found that lower temperature resulted in a higher quality factor, and the quality factor increased by 56.43%, from 1291.4 at 300 K to 2020.2 at 77 K. |
Keyword | MEMS AlN resonator contour mode heavily doped silicon temperature coefficient of frequency (TCF) cryogenic characteristics Acoustic wave velocity Acoustic wave velocity measurement Aluminum nitride Electrodes III V semiconductors Natural frequencies Silicon on insulator technology Temperature Thermal conductivity Aluminum nitride (AlN) Heavily doped silicons High thermal conductivity Microfabrication process Silicon on insulators (SOI) Temperature characteristic Temperature coefficient of frequencies Temperature hysteresis |
URL | 查看原文 |
Indexed By | SCI ; SCIE ; EI |
Language | 英语 |
WOS Research Area | Chemistry ; Science & Technology - Other Topics ; Instruments & Instrumentation ; Physics |
WOS Subject | Chemistry, Analytical ; Nanoscience & Nanotechnology ; Instruments & Instrumentation ; Physics, Applied |
WOS ID | WOS:000622835800001 |
Publisher | MDPI |
EI Accession Number | 20210709911030 |
EI Keywords | Acoustic resonators |
EI Classification Number | 641.1 Thermodynamics ; 714.2 Semiconductor Devices and Integrated Circuits ; 751.1 Acoustic Waves ; 752.1 Acoustic Devices ; 804.1 Organic Compounds |
Original Document Type | Article |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/125832 |
Collection | 信息科学与技术学院_硕士生 信息科学与技术学院_PI研究组_任豪组 |
Corresponding Author | Ren, Hao |
Affiliation | 1.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China; 2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China; 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
First Author Affilication | School of Information Science and Technology |
Corresponding Author Affilication | School of Information Science and Technology |
First Signature Affilication | School of Information Science and Technology |
Recommended Citation GB/T 7714 | Fei, Sitao,Ren, Hao. Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate[J]. MICROMACHINES,2021,12(2):#VALUE!. |
APA | Fei, Sitao,&Ren, Hao.(2021).Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate.MICROMACHINES,12(2),#VALUE!. |
MLA | Fei, Sitao,et al."Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate".MICROMACHINES 12.2(2021):#VALUE!. |
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