Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate

doi:10.3390/mi12020143

	Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate
	Fei, Sitao1,2,3 ; Ren, Hao1
	2021-02
发表期刊	MICROMACHINES
EISSN	2072-666X
卷号	12 期号:2 页码:#VALUE!
DOI	10.3390/mi12020143
摘要	As a result of their IC compatibility, high acoustic velocity, and high thermal conductivity, aluminum nitride (AlN) resonators have been studied extensively over the past two decades, and widely implemented for radio frequency (RF) and sensing applications. However, the temperature coefficient of frequency (TCF) of AlN is -25 ppm/degrees C, which is high and limits its RF and sensing application. In contrast, the TCF of heavily doped silicon is significantly lower than the TCF of AlN. As a result, this study uses an AlN contour mode ring type resonator with heavily doped silicon as its bottom electrode in order to reduce the TCF of an AlN resonator. A simple microfabrication process based on Silicon-on-Insulator (SOI) is presented. A thickness ratio of 20:1 was chosen for the silicon bottom electrode to the AlN layer in order to make the TCF of the resonator mainly dependent upon heavily doped silicon. A cryogenic cooling test down to 77 K and heating test up to 400 K showed that the resonant frequency of the AlN resonator changed linearly with temperature change; the TCF was shown to be -9.1 ppm/degrees C. The temperature hysteresis characteristic of the resonator was also measured, and the AlN resonator showed excellent temperature stability. The quality factor versus temperature characteristic was also studied between 77 K and 400 K. It was found that lower temperature resulted in a higher quality factor, and the quality factor increased by 56.43%, from 1291.4 at 300 K to 2020.2 at 77 K.
关键词	MEMS AlN resonator contour mode heavily doped silicon temperature coefficient of frequency (TCF) cryogenic characteristics Acoustic wave velocity Acoustic wave velocity measurement Aluminum nitride Electrodes III V semiconductors Natural frequencies Silicon on insulator technology Temperature Thermal conductivity Aluminum nitride (AlN) Heavily doped silicons High thermal conductivity Microfabrication process Silicon on insulators (SOI) Temperature characteristic Temperature coefficient of frequencies Temperature hysteresis
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收录类别	SCI ; SCIE ; EI
语种	英语
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Instruments & Instrumentation ; Physics
WOS类目	Chemistry, Analytical ; Nanoscience & Nanotechnology ; Instruments & Instrumentation ; Physics, Applied
WOS记录号	WOS:000622835800001
出版者	MDPI
EI入藏号	20210709911030
EI主题词	Acoustic resonators
EI分类号	641.1 Thermodynamics ; 714.2 Semiconductor Devices and Integrated Circuits ; 751.1 Acoustic Waves ; 752.1 Acoustic Devices ; 804.1 Organic Compounds
原始文献类型	Article
引用统计	被引频次：10[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/125832
专题	信息科学与技术学院_硕士生信息科学与技术学院_PI研究组_任豪组
通讯作者	Ren, Hao
作者单位	1.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China; 2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China; 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
第一作者单位	信息科学与技术学院
通讯作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Fei, Sitao,Ren, Hao. Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate[J]. MICROMACHINES,2021,12(2):#VALUE!.
APA	Fei, Sitao,&Ren, Hao.(2021).Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate.MICROMACHINES,12(2),#VALUE!.
MLA	Fei, Sitao,et al."Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate".MICROMACHINES 12.2(2021):#VALUE!.