Ionic synergetically coupled electrolyte gated transistors for neuromorphic engineering applications

doi:10.1016/B978-0-12-819717-2.00007-2

	Ionic synergetically coupled electrolyte gated transistors for neuromorphic engineering applications
	2020-05-27
	Zhu LQ(竺立强)1,2; Yu F 2; Ren ZY2
来源专著	Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing
出版地	United Kingdom
出版者	Woodhead Publishing
ISBN	978-0-12-819717-2
DOI	10.1016/B978-0-12-819717-2.00007-2
收录类别	SSCI ; SSCI
语种	英语
文献类型	专著章节
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/123175
专题	个人在本单位外知识产出
作者单位	1.School of Physical Science and Technology, Ningbo University, Ningbo, P.R. China 2.Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, P.R. China
推荐引用方式 GB/T 7714	Zhu LQ,Yu F,Ren ZY. Ionic synergetically coupled electrolyte gated transistors for neuromorphic engineering applications. United Kingdom:Woodhead Publishing,2020.