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PbS colloidal quantum dots patterning technique with low vertical leakage current for the photodetection applications | |
2020-04 | |
发表期刊 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (IF:2.8[JCR-2023],2.7[5-Year]) |
ISSN | 0957-4522 |
EISSN | 1573-482X |
卷号 | 31期号:8页码:5900-5906 |
发表状态 | 已发表 |
DOI | 10.1007/s10854-019-02819-3 |
摘要 | The colloidal quantum dots (CQDs) are a promising nanometer-sized material system for optoelectronic applications due to the low cost, room temperature processing and substrate compatibility. Solution-processed technology such as spin-coating can make CQDs large-scale deposition on the substrates, whereas it inevitably brings about CQDs adherence to the edges even bottom of the substrates. As a result, the devices are not isolated and vertical leakage current occurs from the surface of CQDs to the substrates. In this work, two kinds of CQDs patterning techniques named etching-assisted patterning (EAP) and lift-off assisted patterning (LAP) have been put forward to significantly suppress the vertical current from several nanoampere to a few picoampere. Meanwhile, the CQDs photoconductor detectors have also been fabricated through these two patterning methods on the SiO2/Si substrates. Compared with un-patterning (UP) photodetectors, these two techniques both can enhance the photocurrent and promote the optoelectrical quality factors such as the responsivity and the specific detectivity, which make it possible to manufacture CQDs detector arrays and promote CQDs in optoelectronic applications. |
收录类别 | SCI ; SCIE ; EI ; CPCI |
语种 | 英语 |
资助项目 | National Natural Science Foundation of China[11705263] ; Shanghai Sailing Program[17YF1422700] ; Science and Technology Commission of Shanghai Municipality[19511107400][18511105202] |
WOS研究方向 | Engineering ; Materials Science ; Physics |
WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
WOS记录号 | WOS:000529360200018 |
出版者 | SPRINGER |
原始文献类型 | Article |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/121073 |
专题 | 物质科学与技术学院 物质科学与技术学院_PI研究组_宁志军组 物质科学与技术学院_硕士生 物质科学与技术学院_博士生 |
通讯作者 | Zheng, Li |
作者单位 | 1.Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China 3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 4.Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA |
推荐引用方式 GB/T 7714 | Zhou, Wen,Zheng, Li,Cheng, Xinhong,et al. PbS colloidal quantum dots patterning technique with low vertical leakage current for the photodetection applications[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2020,31(8):5900-5906. |
APA | Zhou, Wen.,Zheng, Li.,Cheng, Xinhong.,Zhou, Wenjia.,Xiao, Xiongbin.,...&Yu, Yuehui.(2020).PbS colloidal quantum dots patterning technique with low vertical leakage current for the photodetection applications.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,31(8),5900-5906. |
MLA | Zhou, Wen,et al."PbS colloidal quantum dots patterning technique with low vertical leakage current for the photodetection applications".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 31.8(2020):5900-5906. |
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