Weak localization in graphene sandwiched by aligned h-BN flakes
2020-05-22
发表期刊NANOTECHNOLOGY
ISSN0957-4484
EISSN1361-6528
卷号31期号:21
发表状态已发表
DOI10.1088/1361-6528/ab7444
摘要

Charge carriers in graphene exhibit distinct characteristics from those in other two-dimensional materials because of their chiral nature. Additionally, multiple Dirac cones that emerge in graphene superlattices have been regarded as an interesting point in condensed-matter physics in recent years. Here, we report an investigation of the magneto-conductance in graphene encapsulated on the top and bottom by aligned h-BN. The bottom h-BN is precisely aligned with graphene, while the top h-BN is rotated a very small angle relative to it. Such a heterostructure could spoil the commensurate state existing in precisely aligned graphene while the giant moire superlattice remains. A clear signature of weak localization and weak anti-localization is observed at multiple Dirac cones. Both the weak (anti)localization and the universal conductance fluctuations exhibit strong dependencies on the carrier density, temperature and channel length. This artificial heterostructure allows one to explore quantum interference in graphene with a wide spectrum of electronic properties.

关键词graphene superlattice incommensurate state weak localization universal conductance fluctuation
收录类别SCI ; SCIE ; EI
语种英语
资助项目Science and Technology Commission of Shanghai Municipality[16ZR1442700]
WOS研究方向Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号WOS:000520169300001
出版者IOP PUBLISHING LTD
EI入藏号20201308355579
EI主题词Boron nitride ; Electric conductance ; Electronic properties
EI分类号Electricity: Basic Concepts and Phenomena:701.1 ; Nanotechnology:761 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2
WOS关键词HEXAGONAL BORON-NITRIDE ; SCATTERING
原始文献类型Article
引用统计
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/119195
专题物质科学与技术学院_硕士生
物质科学与技术学院_特聘教授组_谢晓明组
物质科学与技术学院_博士生
通讯作者Wang, Haomin
作者单位
1.Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, 865 Changning Rd, Shanghai 200050, Peoples R China
2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
3.CAS Ctr Excellence Superconducting Elect CENSE, Shanghai 200050, Peoples R China
4.Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China
5.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
6.Fudan Univ, State Key Lab ASIC & Syst, Sch Informat Sci & Technol, Shanghai 200433, Peoples R China
推荐引用方式
GB/T 7714
Wang, Xiujun,Wang, HuiShan,Chen, Lingxiu,et al. Weak localization in graphene sandwiched by aligned h-BN flakes[J]. NANOTECHNOLOGY,2020,31(21).
APA Wang, Xiujun.,Wang, HuiShan.,Chen, Lingxiu.,He, Li.,Chen, Chen.,...&Xie, Xiaoming.(2020).Weak localization in graphene sandwiched by aligned h-BN flakes.NANOTECHNOLOGY,31(21).
MLA Wang, Xiujun,et al."Weak localization in graphene sandwiched by aligned h-BN flakes".NANOTECHNOLOGY 31.21(2020).
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