ShanghaiTech University Knowledge Management System
Weak localization in graphene sandwiched by aligned h-BN flakes | |
2020-05-22 | |
发表期刊 | NANOTECHNOLOGY |
ISSN | 0957-4484 |
EISSN | 1361-6528 |
卷号 | 31期号:21 |
发表状态 | 已发表 |
DOI | 10.1088/1361-6528/ab7444 |
摘要 | Charge carriers in graphene exhibit distinct characteristics from those in other two-dimensional materials because of their chiral nature. Additionally, multiple Dirac cones that emerge in graphene superlattices have been regarded as an interesting point in condensed-matter physics in recent years. Here, we report an investigation of the magneto-conductance in graphene encapsulated on the top and bottom by aligned h-BN. The bottom h-BN is precisely aligned with graphene, while the top h-BN is rotated a very small angle relative to it. Such a heterostructure could spoil the commensurate state existing in precisely aligned graphene while the giant moire superlattice remains. A clear signature of weak localization and weak anti-localization is observed at multiple Dirac cones. Both the weak (anti)localization and the universal conductance fluctuations exhibit strong dependencies on the carrier density, temperature and channel length. This artificial heterostructure allows one to explore quantum interference in graphene with a wide spectrum of electronic properties. |
关键词 | graphene superlattice incommensurate state weak localization universal conductance fluctuation |
收录类别 | SCI ; SCIE ; EI |
语种 | 英语 |
资助项目 | Science and Technology Commission of Shanghai Municipality[16ZR1442700] |
WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
WOS类目 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
WOS记录号 | WOS:000520169300001 |
出版者 | IOP PUBLISHING LTD |
EI入藏号 | 20201308355579 |
EI主题词 | Boron nitride ; Electric conductance ; Electronic properties |
EI分类号 | Electricity: Basic Concepts and Phenomena:701.1 ; Nanotechnology:761 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2 |
WOS关键词 | HEXAGONAL BORON-NITRIDE ; SCATTERING |
原始文献类型 | Article |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/119195 |
专题 | 物质科学与技术学院_硕士生 物质科学与技术学院_特聘教授组_谢晓明组 物质科学与技术学院_博士生 |
通讯作者 | Wang, Haomin |
作者单位 | 1.Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, 865 Changning Rd, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China 3.CAS Ctr Excellence Superconducting Elect CENSE, Shanghai 200050, Peoples R China 4.Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China 5.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 6.Fudan Univ, State Key Lab ASIC & Syst, Sch Informat Sci & Technol, Shanghai 200433, Peoples R China |
推荐引用方式 GB/T 7714 | Wang, Xiujun,Wang, HuiShan,Chen, Lingxiu,et al. Weak localization in graphene sandwiched by aligned h-BN flakes[J]. NANOTECHNOLOGY,2020,31(21). |
APA | Wang, Xiujun.,Wang, HuiShan.,Chen, Lingxiu.,He, Li.,Chen, Chen.,...&Xie, Xiaoming.(2020).Weak localization in graphene sandwiched by aligned h-BN flakes.NANOTECHNOLOGY,31(21). |
MLA | Wang, Xiujun,et al."Weak localization in graphene sandwiched by aligned h-BN flakes".NANOTECHNOLOGY 31.21(2020). |
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