Tailoring the Hybrid Anomalous Hall Response in Engineered Magnetic Topological Insulator Heterostructures
2020-03-11
发表期刊NANO LETTERS (IF:9.6[JCR-2023],10.1[5-Year])
ISSN1530-6984
EISSN1530-6992
卷号20期号:3页码:1731-1737
发表状态已发表
DOI10.1021/acs.nanolett.9b04932
摘要

Engineering the anomalous Hall effect (AHE) is the key to manipulate the magnetic orders in the emerging magnetic topological insulators (MTIs). In this letter, we synthesize the epitaxial Bi2Te3/MnTe magnetic heterostructures and observe pronounced AHE signals from both layers combined together. The evolution of the resulting hybrid AHE intensity with the top Bi2Te3 layer thickness manifests the presence of an intrinsic ferromagnetic phase induced by the topological surface states at the heterolayer interface. More importantly, by doping the Bi2Te3 layer with Sb, we are able to manipulate the sign of the Berry phase-associated AHE component. Our results demonstrate the unparalleled advantages of MTI heterostructures over magnetically doped TI counterparts in which the tunability of the AHE response can be greatly enhanced. This in turn unveils a new avenue for MTI heterostructure-based multifunctional applications.

关键词magnetic topological insulators anomalous Hall effect heterostructure engineering molecular beam epitaxy Berry curvature
收录类别SCI ; SCIE ; EI
语种英语
资助项目Engineering and Physical Sciences Research Council[EP/N032128/1]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号WOS:000526408800034
出版者AMER CHEMICAL SOC
WOS关键词FERROMAGNETISM
原始文献类型Article
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文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/118925
专题信息科学与技术学院_硕士生
物质科学与技术学院_PI研究组_李刚组
信息科学与技术学院_PI研究组_寇煦丰组
信息科学与技术学院_本科生
信息科学与技术学院_博士生
物质科学与技术学院_公共科研平台_大科学平台发展研究部
物质科学与技术学院_PI研究组_张石磊组
通讯作者Yao, Qi; Zhang, Shilei; Kou, Xufeng
作者单位
1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
2.ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai 200031, Peoples R China
3.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 200031, Peoples R China
4.Tsinghua Univ, Key Lab Adv Mat MOE, Sch Mat Sci & Engn, Beijing 100084, Peoples R China
5.Univ Calif Irvine, Dept Phys & Astron, Irvine, CA 92697 USA
6.Diamond Light Source, Magnet Spect Grp, Didcot OX11 0DE, Oxon, England
7.Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England
第一作者单位信息科学与技术学院
通讯作者单位物质科学与技术学院;  上海科技大学;  信息科学与技术学院
第一作者的第一单位信息科学与技术学院
推荐引用方式
GB/T 7714
Chen, Peng,Zhang, Yong,Yao, Qi,et al. Tailoring the Hybrid Anomalous Hall Response in Engineered Magnetic Topological Insulator Heterostructures[J]. NANO LETTERS,2020,20(3):1731-1737.
APA Chen, Peng.,Zhang, Yong.,Yao, Qi.,Tian, Fugu.,Li, Lun.,...&Kou, Xufeng.(2020).Tailoring the Hybrid Anomalous Hall Response in Engineered Magnetic Topological Insulator Heterostructures.NANO LETTERS,20(3),1731-1737.
MLA Chen, Peng,et al."Tailoring the Hybrid Anomalous Hall Response in Engineered Magnetic Topological Insulator Heterostructures".NANO LETTERS 20.3(2020):1731-1737.
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