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Tailoring the Hybrid Anomalous Hall Response in Engineered Magnetic Topological Insulator Heterostructures | |
2020-03-11 | |
发表期刊 | NANO LETTERS (IF:9.6[JCR-2023],10.1[5-Year]) |
ISSN | 1530-6984 |
EISSN | 1530-6992 |
卷号 | 20期号:3页码:1731-1737 |
发表状态 | 已发表 |
DOI | 10.1021/acs.nanolett.9b04932 |
摘要 | Engineering the anomalous Hall effect (AHE) is the key to manipulate the magnetic orders in the emerging magnetic topological insulators (MTIs). In this letter, we synthesize the epitaxial Bi2Te3/MnTe magnetic heterostructures and observe pronounced AHE signals from both layers combined together. The evolution of the resulting hybrid AHE intensity with the top Bi2Te3 layer thickness manifests the presence of an intrinsic ferromagnetic phase induced by the topological surface states at the heterolayer interface. More importantly, by doping the Bi2Te3 layer with Sb, we are able to manipulate the sign of the Berry phase-associated AHE component. Our results demonstrate the unparalleled advantages of MTI heterostructures over magnetically doped TI counterparts in which the tunability of the AHE response can be greatly enhanced. This in turn unveils a new avenue for MTI heterostructure-based multifunctional applications. |
关键词 | magnetic topological insulators anomalous Hall effect heterostructure engineering molecular beam epitaxy Berry curvature |
收录类别 | SCI ; SCIE ; EI |
语种 | 英语 |
资助项目 | Engineering and Physical Sciences Research Council[EP/N032128/1] |
WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
WOS类目 | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
WOS记录号 | WOS:000526408800034 |
出版者 | AMER CHEMICAL SOC |
WOS关键词 | FERROMAGNETISM |
原始文献类型 | Article |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/118925 |
专题 | 信息科学与技术学院_硕士生 物质科学与技术学院_PI研究组_李刚组 信息科学与技术学院_PI研究组_寇煦丰组 信息科学与技术学院_本科生 信息科学与技术学院_博士生 物质科学与技术学院_公共科研平台_大科学平台发展研究部 物质科学与技术学院_PI研究组_张石磊组 |
通讯作者 | Yao, Qi; Zhang, Shilei; Kou, Xufeng |
作者单位 | 1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China 2.ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai 200031, Peoples R China 3.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 200031, Peoples R China 4.Tsinghua Univ, Key Lab Adv Mat MOE, Sch Mat Sci & Engn, Beijing 100084, Peoples R China 5.Univ Calif Irvine, Dept Phys & Astron, Irvine, CA 92697 USA 6.Diamond Light Source, Magnet Spect Grp, Didcot OX11 0DE, Oxon, England 7.Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England |
第一作者单位 | 信息科学与技术学院 |
通讯作者单位 | 物质科学与技术学院; 上海科技大学; 信息科学与技术学院 |
第一作者的第一单位 | 信息科学与技术学院 |
推荐引用方式 GB/T 7714 | Chen, Peng,Zhang, Yong,Yao, Qi,et al. Tailoring the Hybrid Anomalous Hall Response in Engineered Magnetic Topological Insulator Heterostructures[J]. NANO LETTERS,2020,20(3):1731-1737. |
APA | Chen, Peng.,Zhang, Yong.,Yao, Qi.,Tian, Fugu.,Li, Lun.,...&Kou, Xufeng.(2020).Tailoring the Hybrid Anomalous Hall Response in Engineered Magnetic Topological Insulator Heterostructures.NANO LETTERS,20(3),1731-1737. |
MLA | Chen, Peng,et al."Tailoring the Hybrid Anomalous Hall Response in Engineered Magnetic Topological Insulator Heterostructures".NANO LETTERS 20.3(2020):1731-1737. |
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