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An ultrasensitive molybdenum-based double-heterojunction phototransistor | |
2021-07-02 | |
发表期刊 | NATURE COMMUNICATIONS |
ISSN | 2041-1723 |
EISSN | 2041-1723 |
卷号 | 12期号:1 |
发表状态 | 已发表 |
DOI | 10.1038/s41467-021-24397-x |
摘要 | Two-dimensional (2D) materials are promising for next-generation photo detection because of their exceptional properties such as a strong interaction with light, electronic and optical properties that depend on the number of layers, and the ability to form hybrid structures. However, the intrinsic detection ability of 2D material-based photodetectors is low due to their atomic thickness. Photogating is widely used to improve the responsivity of devices, which usually generates large noise current, resulting in limited detectivity. Here, we report a molybdenum-based phototransistor with MoS2 channel and alpha -MoO3-x contact electrodes. The device works in a photo-induced barrier-lowering (PIBL) mechanism and its double heterojunctions between the channel and the electrodes can provide positive feedback to each other. As a result, a detectivity of 9.8x10(16)cm Hz(1/2) W-1 has been achieved. The proposed double heterojunction PIBL mechanism adds to the techniques available for the fabrication of 2D material-based phototransistors with an ultrahigh photosensitivity. Here, the authors exploit a photo-induced barrier-lowering mechanism in MoS2/ alpha -MoO3-x heterojunctions to realize two-dimensional phototransistors with enhanced performance and fast response at low bias voltage. |
关键词 | 研究论文 |
学科门类 | 理学 ; 工学 |
URL | 查看原文 |
收录类别 | SCI ; SCIE |
语种 | 英语 |
WOS研究方向 | Science & Technology - Other Topics |
WOS类目 | Multidisciplinary Sciences |
WOS记录号 | WOS:000672164300007 |
出版者 | NATURE RESEARCH |
原始文献类型 | Article |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/127731 |
专题 | 物质科学与技术学院_博士生 |
共同第一作者 | Liu, Chi |
通讯作者 | Yin, Lichang; Wang, Xiaomu; Cheng, Hui-Ming; Sun, Dong-Ming |
作者单位 | 1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang, Peoples R China; 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai, Peoples R China; 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei, Peoples R China; 4.Nanjing Univ, Natl Lab Solid State Microstruct, Sch Elect Sci & Engn, Collaborat Innovat Ctr Adv Microstruct,Sch Phys, Nanjing, Peoples R China; 5.Henan Univ, Henan Key Lab Photovolta Mat, Kaifeng, Peoples R China; 6.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen, Peoples R China |
第一作者单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Feng, Shun,Liu, Chi,Zhu, Qianbing,et al. An ultrasensitive molybdenum-based double-heterojunction phototransistor[J]. NATURE COMMUNICATIONS,2021,12(1). |
APA | Feng, Shun.,Liu, Chi.,Zhu, Qianbing.,Su, Xin.,Qian, Wangwang.,...&Sun, Dong-Ming.(2021).An ultrasensitive molybdenum-based double-heterojunction phototransistor.NATURE COMMUNICATIONS,12(1). |
MLA | Feng, Shun,et al."An ultrasensitive molybdenum-based double-heterojunction phototransistor".NATURE COMMUNICATIONS 12.1(2021). |
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