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Enhanced linearity of AlGaN/GaN HEMTs via dual-gate configuration for RF amplifier applications 期刊论文
SOLID-STATE ELECTRONICS, 2025, 卷号: 227
作者:  
Adobe PDF(4152Kb)  |  收藏  |  浏览/下载：41/1  |  提交时间：2025/05/12
Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT 期刊论文
POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11
作者:  Yitai zhu;  Haitao Du;  Yu Zhang;  Haolan Qu;  Haodong Jiang
浏览  |  Microsoft Word(2182Kb)  |  收藏  |  浏览/下载：102/1  |  提交时间：2025/03/07
Electrical Transport at n-Ga2O3/n-SiC Hetero-Interface Constructed by Hydrophilic and Surface Activated Bonding 会议论文
2025 9TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM), Hong Kong, Hong Kong, 9-12 March 2025
作者:  Zhenyu Qu;  Wenhui Xu;  Haodong Jiang;  Tiancheng Zhao;  Yeliang Wang
Adobe PDF(422Kb)  |  收藏  |  浏览/下载：14/1  |  提交时间：2025/07/07
Electrical and Thermal Characterization of Hetero-Integrated β-Ga2O3-on-Diamond SBDs by Transfer Printing Technology 会议论文
2025 9TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM), Hong Kong, Hong Kong, 9-12 March 2025
作者:  Zhenyu Qu;  Tiancheng Zhao;  Wenhui Xu;  Haodong Jiang;  Yeliang Wang
Adobe PDF(502Kb)  |  收藏  |  浏览/下载：14/2  |  提交时间：2025/07/07
氧化镓异质衬底集成技术研究进展 期刊论文
人工晶体学报, 2025, 卷号: 54, 期号: 03, 页码: 470-490
作者:  瞿振宇;  徐文慧;  江昊东;  梁恒硕;  赵天成
Adobe PDF(1960Kb)  |  收藏  |  浏览/下载：56/4  |  提交时间：2025/04/25
Neutral Beam Etching Enabled Recessed-Gate Emode GaN MOSHEMT: A Multi-Vth Power Device Platform for All-GaN Monolithic Integration 会议论文
INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS
作者:  Han Gao;  Yitian Gu;  Yudong Li;  Xuanling Zhou;  Haodong Jiang
Adobe PDF(1101Kb)  |  收藏  |  浏览/下载：88/4  |  提交时间：2025/03/03
1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: 72, 期号: 3, 页码: 1035-1040
作者:  Wenbo Ye;  Junmin Zhou;  Han Gao;  Haowen Guo;  Yitian Gu
Adobe PDF(1674Kb)  |  收藏  |  浏览/下载：90/5  |  提交时间：2025/02/12
Effect of 5 MeV proton irradiation on electrical and trap characteristics of β-Ga2O3 power diode 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2025, 卷号: 187
作者:  Qu, Haolan;  Huang, Wei;  Zhang, Yu;  Sui, Jin;  Yang, Ge
Adobe PDF(6465Kb)  |  收藏  |  浏览/下载：347/4  |  提交时间：2024/11/29
Investigation of the Degradation Mechanism of β-Ga2O3 SBD on 5 MeV Proton Irradiation 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: PP, 期号: 99, 页码: 3509-3515
作者:  Wenzhang Du;  Yuangang Wang;  Yukai Huang;  Junyan Zhu;  Junfeng Yu
Adobe PDF(2104Kb)  |  收藏  |  浏览/下载：14/1  |  提交时间：2025/06/23
Nonlinear Characteristics Analysis of GaN p-i-n Diodes at Room and Low Temperature 会议论文
2024 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP), Nanjing, China, 9-11 Nov. 2024
作者:  Junyuan Hu;  Yonghao Jia;  Xinbo Zou
Adobe PDF(839Kb)  |  收藏  |  浏览/下载：53/3  |  提交时间：2025/04/28
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