×
验证码:
换一张
忘记密码?
记住我
×
统一认证登录
登录
中文版
|
English
上海科技大学知识管理系统
ShanghaiTech University Knowledge Management System
统一认证登录
登录
注册
ALL
ORCID
题名
作者
发表日期
关键词
文献类型
DOI
出处
存缴日期
收录类别
出版者
学习讨论厅
图片搜索
粘贴图片网址
首页
研究单元&专题
作者
文献类型
学科分类
知识图谱
知识整合
学习讨论厅
在结果中检索
研究单元&专题
物质科学与技术学院 [5]
信息科学与技术学院 [1]
作者
赵爱迪 [2]
陈佰乐 [1]
邓卓 [1]
薛加民 [1]
陆卫 [1]
陈效双 [1]
更多...
文献类型
期刊论文 [6]
发表日期
2023 [2]
2022 [2]
2021 [2]
出处
ADVANCED M... [2]
ACS NANO [1]
GREEN ENER... [1]
JOURNAL OF... [1]
JOURNAL OF... [1]
语种
英语 [5]
资助项目
Ministry o... [1]
National N... [1]
National N... [1]
Strategic ... [1]
Youth Inno... [1]
资助机构
收录类别
EI [6]
SCIE [3]
SCI [2]
SCOPUS [2]
ESCI [1]
×
知识图谱
KMS
反馈留言
浏览/检索结果:
共6条,第1-6条
帮助
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
提交时间升序
提交时间降序
题名升序
题名降序
WOS被引频次升序
WOS被引频次降序
期刊影响因子升序
期刊影响因子降序
作者升序
作者降序
发表日期升序
发表日期降序
Selective capture of Tl2O from flue gas with formation of p–n junction on V2O5–WO3/TiO2 catalyst under working conditions
期刊论文
GREEN ENERGY & ENVIRONMENT, 2023, 卷号: 8, 期号: 1, 页码: 4-9
作者:
Chen, Jianjun
;
Yin, Rongqiang
;
Chen, Gongda
;
Lang, Junyu
;
Chen, Xiaoping
Adobe PDF(2435Kb)
|
收藏
|
浏览/下载:476/0
|
提交时间:2022/02/18
Electrocatalysis
Flue gases
Flues
Semiconductor junctions
Titanium dioxide
Tungsten compounds
Vanadium pentoxide
Best choice
Capture
Condition
Dismutation
Heterocatalysis
Orbitals
P-n junction
]+ catalyst
Terahertz Nonlinear Hall Rectifiers Based on Spin-Polarized Topological Electronic States in 1T-CoTe2
期刊论文
ADVANCED MATERIALS, 2023, 卷号: 35, 期号: 10
作者:
Hu, Zhen
;
Zhang, Libo
;
Chakraborty, Atasi
;
D'Olimpio, Gianluca
;
Fujii, Jun
Adobe PDF(7805Kb)
|
收藏
|
浏览/下载:418/0
|
提交时间:2023/03/10
rystal symmetry
Electric fields
Electric rectifiers
Rectifying circuits
Semiconductor junctions
Spin Hall effect
Tellurium compounds
1t-cote 2
Inversion symmetry
Nonlinear hall effect
Second orders
Spin-polarized
Symmetry breakings
Tera Hertz
Terahertz rectification
Type II
Type-II dirac semimetal
Ultrathin Van der Waals Antiferromagnet CrTe3 for Fabrication of In-Plane CrTe3/CrTe2 Monolayer Magnetic Heterostructures
期刊论文
ADVANCED MATERIALS, 2022
作者:
Yao, Jie
;
Wang, Han
;
Yuan, Bingkai
;
Hu, Zhenpeng
;
Wu, Changzheng
Adobe PDF(2239Kb)
|
收藏
|
浏览/下载:293/3
|
提交时间:2022/05/18
2D materials
antiferromagnetism
chromium telluride
in-plane heterostructures
metal-semiconductor junctions
monolayer chromium tritelluride
van der Waals magnets
Diamond semiconductor and elastic strain engineering
期刊论文
JOURNAL OF SEMICONDUCTORS, 2022, 卷号: 43, 期号: 2
作者:
Dang, Chaoqun
;
Lu, Anliang
;
Wang, Heyi
;
Zhang, Hongti
;
Lu, Yang
Adobe PDF(4404Kb)
|
收藏
|
浏览/下载:402/2
|
提交时间:2022/03/25
Diamonds
Electronic properties
Energy gap
Field effect transistors
Integrated circuits
Microelectronics
Quantum optics
Semiconductor device manufacture
Semiconductor junctions
Thermal conductivity
Thermal expansion
Wide band gap semiconductors
Elastic strain engineerings
High breakdown voltage
Low thermal expansion
Power-electronics
Property
Semiconductor industry
Thermal expansion coefficients
Ultra-high
Ultra-wide
Wide-band-gap semiconductor
Visualizing Band Profiles of Gate-Tunable Junctions in MoS2/WSe2Heterostructure Transistors
期刊论文
ACS NANO, 2021, 卷号: 15, 期号: 10, 页码: 16314-16321
作者:
Sun, Xinzuo
;
Chen, Yan
;
Li, Zhiwei
;
Han, Yu
;
Zhou, Qin
Adobe PDF(3492Kb)
|
收藏
|
浏览/下载:394/5
|
提交时间:2021/12/03
Charge transfer
Layered semiconductors
Molybdenum compounds
Optical properties
Scanning
Scanning tunneling microscopy
Selenium compounds
Semiconductor junctions
Spectroscopy
Sulfur compounds
Tungsten compounds
Band profile
Contact modes
Contact
mode scanning tunneling spectroscopy
Electronics devices
Mode scanning
Scanning tunnelling spectroscopy
Tunables
Van der Waal
Van der waal heterostructure
van der Waals heterostructure
electronic device
scanning tunneling spectroscopy
band profiles
contact-mode scanning tunneling spectroscopy
InP-Based Extended-Short Wave Infrared Heterojunction Phototransistor
期刊论文
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2021, 卷号: 39, 期号: 14, 页码: 4814-4819
作者:
Zongheng Xie
;
Zhuo Deng
;
Jian Huang
;
Zhiyang Xie
;
Zhiqi Zhou
Adobe PDF(1321Kb)
|
收藏
|
浏览/下载:291/4
|
提交时间:2021/07/30
Dark current
Junctions
III-V semiconductor materials
Indium phosphide
Substrates
Electric fields
Phototransistors
Bandwidth
e-SWIR phototransistor
high gain
InGaAs
GaAsSb T2SLs
首页
上一页
1
下一页
末页