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Strain-tuned full spin polarization and ndoping of phosphorene via the phosphorene/Co3Sn3S2 heterojunction
期刊论文
COMPUTATIONAL MATERIALS SCIENCE, 2024, 卷号: 233
作者:
Yang, Yao
;
Wang, Xiaofang
;
Xie, Yiqun
;
Hu, Yibin
;
Chen, Xiaoshuang
Adobe PDF(2394Kb)
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浏览/下载:347/0
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提交时间:2023/12/22
Energy gap
Heterojunctions
Schottky barrier diodes
Semiconductor doping
Spin polarization
Tin compounds
Van der Waals forces
Electronic.structure
First principle method
Half metals
High carrier mobility
N-Doping
Phosphorene
Schottky barriers
Spin channels
Spin-orbit couplings
Spin-polarization
Neutron Irradiation Induced Carrier Removal and Deep-Level Traps in N-Gan Schottky Barrier Diodes
会议论文
CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC 2023), Shanghai, China, 26-27 June 2023
作者:
Jin Sui
;
Jiaxiang Chen
;
Haolan Qu
;
Ruohan Zhang
;
Min Zhu
Adobe PDF(753Kb)
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浏览/下载:306/1
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提交时间:2023/09/23
Radiation effects
Schottky diodes
Spectroscopy
Schottky barriers
Neutrons
Threshold voltage
Leakage currents
Electrical conductivity and infrared radiation performance of SiC-CNT composite ceramics
期刊论文
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2023, 卷号: 43, 期号: 11, 页码: 4627-4635
作者:
Zhu, Ming
;
Chen, Jian
;
Li, Fanfan
;
Huang, Changcong
;
Liu, Huan
Adobe PDF(6462Kb)
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浏览/下载:379/0
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提交时间:2023/05/06
Carbon nanotubes
Electric conductivity
Electromagnetic wave emission
Grain boundaries
Infrared radiation
Light sources
Radiation effects
Schottky barrier diodes
Silicon
Solvents
Bulk resistivity
Carbon nanotubes composites
Composite ceramic
Electrical percolation
Grain-boundaries
Infrared emissivity
Radiation performance
Schottky barriers
SiC ceramics
SiC-carbon nanotube composite ceramic
A review on GaN-based two-terminal devices grown on Si substrates
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 卷号: 869, 期号: 15, 页码: 159214
作者:
Zhang, Yu
;
Liu, Chao
;
Zhu, Min
;
Zhang, Yuliang
;
Zou, Xinbo
Adobe PDF(36302Kb)
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浏览/下载:308/0
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提交时间:2021/12/03
Energy gap
III
V semiconductors
Light emitting diodes
Schottky barrier diodes
Silicon
Substrates
Barrier diodes
Design technologies
Device design
Lightemitting diode
Optoelectronic applications
PiN diode
Power conversion
Schottky barriers
Si substrates
Two
terminal devices
GaN
Two-terminal devices
SBDs
p-i-n diodes
LEDs
Electrical properties of SiC-AlN ceramics pressureless sintered under N-2 atmosphere
期刊论文
CERAMICS INTERNATIONAL, 2021, 卷号: 47, 期号: 5, 页码: 7272-7277
作者:
Zhu, Ming
;
Chen, Jian
;
Chen, Wen-hui
;
Zheng, Jia-qi
;
Ma, Ning-ning
Adobe PDF(5781Kb)
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浏览/下载:432/3
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提交时间:2021/04/01
SiC-AlN ceramics
N-2 atmosphere
Varistor voltage
Grain boundary effects
Schottky barriers
Carrier compensation
Aluminum nitride
Argon
Boron carbide
Grain boundaries
III
V semiconductors
Schottky barrier diodes
Silicon
Silicon carbide
Varistors
Vickers hardness
Electrical and mechanical properties
Grain boundary resistance
Orders of magnitude
Pressureless
sintered
Schottky barrier heights
Sintered ceramics
Sintering process
Vertical Schottky barrier diodes based on a bulk $\beta$ -Ga2O3 substrate with high switching performance
会议论文
2019 COMPOUND SEMICONDUCTOR WEEK (CSW), Nara, Japan, 19-23 May 2019
作者:
Lu, Xing
;
Zhang, Xu
;
Jiang, Huaxing
;
Zou, Xinbo
;
Lau, Kei May
Adobe PDF(41Kb)
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收藏
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浏览/下载:245/0
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提交时间:2020/07/14
Switches
Silicon
Substrates
Schottky diodes
Schottky barriers
Voltage
Performance evaluation
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